DIODE B3 9 Search Results
DIODE B3 9 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 |
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Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 |
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Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 |
|
Zener Diode, 5.6 V, ESC | Datasheet |
DIODE B3 9 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
150GB123DContextual Info: SKM 150GB123D Absolute Maximum Ratings Symbol Conditions IGBT *5 &* &*8 95 1<58+1& = 1 + + 4* /300 Inverse diode SEMITRANSTM 3 IGBT Modules & &(8 1 2 /3 70 4* 2 . &( 2 .0 A ?A 1; 2 .30 4* .30 .00 /00 + + .00 + /00 .B3 B00 + + |
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150GB123D 150GB123D 150GAL123D 150GAR123D | |
IGBT MOTOR CONTROL
Abstract: IGBT K 40 T 2002 MJ75
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MWI7506A7 IGBT MOTOR CONTROL IGBT K 40 T 2002 MJ75 | |
SMD ZENER DIODE MARKING CODE G3
Abstract: marking code gc SMD zener PZU11 zener diode SMD marking code 27 4B pzuxb smd marking KD SMD MARKING GP 728 smd marking KH Zener diode smd marking h5 PZU13
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OD323F OD323F SC-90) SMD ZENER DIODE MARKING CODE G3 marking code gc SMD zener PZU11 zener diode SMD marking code 27 4B pzuxb smd marking KD SMD MARKING GP 728 smd marking KH Zener diode smd marking h5 PZU13 | |
PS18
Abstract: SV18
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75-12P1 75-12P1 81T120 PS18 SV18 | |
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Contextual Info: VDI 75-12P1 VII 75-12P1 VID 75-12P1 VIO 75-12P1 IC25 = 92 A = 1200 V VCES VCE sat typ. = 2.7 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 X15 F1 NTC Pin arangement see outlines Features Symbol Conditions |
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75-12P1 75-12P1 81T120 | |
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Contextual Info: SK 50 DGDL 126 T CONVERTER, INVERTER, BRAKE 5 #3 9*" & Absolute Maximum Ratings Symbol Conditions Values Units IGBT - Inverter. For IGBT chopper maximum ratings, please refer to SK35DGDL126T 1* * *? 1 5 #3 <=:> 9* *?5 # ' * " 5 ! |
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SK35DGDL126T | |
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Contextual Info: SK 50 DGDL 126 T CONVERTER, INVERTER, BRAKE 5 #3 9*" & Absolute Maximum Ratings Symbol Conditions Values Units IGBT - Inverter. For IGBT chopper maximum ratings, please refer to SK35DGDL126T 1* * *? 1 5 #3 <=:> 9* *?5 # ' * " 5 ! |
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SK35DGDL126T | |
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Contextual Info: SK 50 DGDL 126 T CONVERTER, INVERTER, BRAKE 5 #3 9*" & Absolute Maximum Ratings Symbol Conditions Values Units IGBT - Inverter. For IGBT chopper maximum ratings, please refer to SK35DGDL126T 1* * *? 1 5 #3 <=:> 9* *?5 # ' * " 5 ! |
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SK35DGDL126T | |
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Contextual Info: SK150GD066T 4 #3 5*" & Absolute Maximum Ratings Symbol Conditions IGBT 1* 6 4 #3 5* * 6 4 !:3 5* *; 899 1 !3! + 4 :9 5* !#! + $99 + < #9 1 6 4 !#3 5* 8 @ 4 #3 5* !AB + 4 :9 5* !3# + #99 + *;4 # ' * SEMITOP 4 |
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SK150GD066T | |
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Contextual Info: SK150GD066T 4 #3 5*" & Absolute Maximum Ratings Symbol Conditions IGBT 1* 6 4 #3 5* * 6 4 !:3 5* *; 899 1 !3! + 4 :9 5* !#! + $99 + < #9 1 6 4 !#3 5* 8 @ 4 #3 5* !AB + 4 :9 5* !3# + #99 + *;4 # ' * SEMITOP 4 |
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SK150GD066T | |
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Contextual Info: SK150GD066T 4 #3 5*" & Absolute Maximum Ratings Symbol Conditions IGBT 1* 6 4 #3 5* * 6 4 !:3 5* *; 899 1 !3! + 4 :9 5* !#! + $99 + < #9 1 6 4 !#3 5* 8 @ 4 #3 5* !AB + 4 :9 5* !3# + #99 + *;4 # ' * SEMITOP 4 |
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SK150GD066T | |
SK12100C
Abstract: SK1240C 1270C
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SBDT-1200-1B O-22OAB SK1240C O-220 SK1240C-1250C SK1260C-1270C SK12100C 97bsbdt12 SK12100C SK1240C 1270C | |
sk a 3050c
Abstract: sk3010 SK3060 3050C SK30100C SK3040C SK3060C 3PAB 30100C
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SBDT-3000-1B O-247AB SK3060C O-247 97bsbdt30 sk a 3050c sk3010 SK3060 3050C SK30100C SK3040C SK3060C 3PAB 30100C | |
DWLP55-06
Abstract: 10-006N
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100-06NO7 DWLP55-06 DWLP55-06 10-006N | |
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4040C
Abstract: SK 69 DIODE TO247AB TO-247AB SK40100C SK4040C SK4060C 50 5G SK diode
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SBDT-4000-1B O-247AB SK4060C O-247 97bsbdt40 4040C SK 69 DIODE TO247AB TO-247AB SK40100C SK4040C SK4060C 50 5G SK diode | |
Q1NC45
Abstract: D2NC45 STQ1NC45-AP STD2NC45-1 STQ1NC45 d2nc
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STD2NC45-1 STQ1NC45 Q1NC45 D2NC45 STQ1NC45-AP STD2NC45-1 STQ1NC45 d2nc | |
STD1NB50Contextual Info: STD1NB50 N - CHANNEL 500V - 7.5Ω - 1.4A IPAK PowerMESH MOSFET TYPE V DSS R DS on ID STD1NB50 500V <9Ω 1.4 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 7.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED |
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STD1NB50 STD1NB50 | |
VS-HFA50PA60Contextual Info: VS-HFA50PA60CPbF, VS-HFA50PA60C-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 2 x 25 FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Compliant to RoHS Directive 2002/95/EC • Designed and JEDEC-JESD47 |
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VS-HFA50PA60CPbF, VS-HFA50PA60C-N3 2002/95/EC JEDEC-JESD47 O-247AC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. VS-HFA50PA60 | |
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Contextual Info: NDD60N900U1 Advance Information N-Channel Power MOSFET 600 V, 900 mW http://onsemi.com Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V BR DSS RDS(ON) MAX 600 V 900 mW @ 10 V N−Channel MOSFET |
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NDD60N900U1 NDD60N900U1/D | |
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Contextual Info: VS-HFA08TA60CPbF, VS-HFA08TA60C-N3 www.vishay.com Vishay Semiconductors HEXFRED , Ultrafast Soft Recovery Diode, 2 x 4 A FEATURES • • • • Ultrafast and ultrasoft recovery Very low IRRM and Qrr Compliant to RoHS Directive 2002/95/EC Designed and qualified |
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VS-HFA08TA60CPbF, VS-HFA08TA60C-N3 2002/95/EC JEDEC-JESD47 O-220AB VS-HFA08TA60C. 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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Contextual Info: SEMiX 604GB176HD + ,- # Absolute Maximum Ratings Symbol Conditions IGBT . )+ , 1 . '+ , 156 '0( +2+ " 3( , 4( " 3( " 9 )( . ')+ , '( = )+ , 0?+ " 3( , 4@+ " 3( " ?3( " 2( " B 4( AAA C '+( |
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604GB176HD | |
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Contextual Info: SEMiX 252GB176HD Absolute Maximum Ratings Symbol Conditions IGBT . + , 1 . '+ , 145 )+,- # '0( )2+ " 3( , '0+ " 7( " 9 )( . ')+ , '( > )+ , )@( " 3( , '@+ " 7( " ')( " :( " B 2( AAA C '+( |
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252GB176HD | |
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Contextual Info: VS-ETU1506S-M3, VS-ETU1506-1-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 15 A FRED Pt FEATURES • Low forward voltage drop • Ultrafast recovery time • 175 °C operating junction temperature • Low leakage current VS-ETU1506S-M3 • Compliant to RoHS Directive 2002/95/EC |
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VS-ETU1506S-M3, VS-ETU1506-1-M3 VS-ETU1506S-M3 2002/95/EC JEDEC-JESD47 11-Mar-11 | |
201GD128DContextual Info: SEMiX 201GD128Ds Absolute Maximum Ratings Symbol Conditions IGBT . '+ , 1 . 0+ , 145 '+,- ! % 0'( '( $ 2( , 03( $ '( $ 8'( 0( = '+ , 0+ $ 2( , 0(+ $ '( $ 00( $ 9( $ 3( ? @ 0+( |
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201GD128Ds 201GD128D | |