DIODE B3 9 Search Results

schottky barrier diode b22

Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

Contextual Info: • International S Rectifier 4Ö554S2 001b?b3 TbO ■ INR INTERNATIONAL RECTIFIER bSE » SERIES IRK.F112 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate

smd diode B3

Abstract: GHB-1206L-B3
Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1206L-B3 Features !3.2mmx1.6mm !LOW POWER !WIDE !IDEAL Description SMT LED, 1.8mm THICKNESS. The Blue source color devices are made CONSUMPTION. with GaN on Sapphire Light Emitting Diode.

Contextual Info: Preliminary Technical Information GenX3TM B3-Class IGBT w/Diode VCES IC110 VCE sat tfi(typ) IXGR72N60B3D1 (Electrically Isolated Back Surface) = = ≤£ = 600V 40A 1.80V 90ns Medium Speed Low Vsat PT IGBTs for 5-40 kHz Switching ISOPLUS 247TM Symbol Test Conditions

Contextual Info: SKCD 81 C 060 I3 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions +, "5647 "59, Values Units %- / 0 12 "+ / 3 4

Contextual Info: bbS3 T3 i 00 2 b3 ^b 73a h a p x Philips Semiconductors Preliminary specification BB134 UHF variable capacitance diode N AUER PHILIPS/DISCRETE blE J> Q U IC K R E F E R E N C E DATA DESCRIPTION The BB134 is a silicon, double-implanted variable capacitance diode in planar

Contextual Info: SKCD 81 C 120 I3 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions +, "5647 "59, Values Units %- / 0 12 "+ / 3 4

Contextual Info: SKCD 81 C 120 I HD power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions +, "5647 "5:, Values Units %- / 0 12 "+ / 3 4

150GB123D

Contextual Info: SKM 150GB123D Absolute Maximum Ratings Symbol Conditions IGBT *5 &* &*8 95 1<58+1& = 1  + + 4* /300 Inverse diode SEMITRANSTM 3 IGBT Modules & &(8 1 2 /3 70 4* 2 .  &( 2 .0 A  ?A 1; 2 .30 4* .30 .00 /00 + + .00 + /00 .B3 B00 + +

Contextual Info: SKCD 81 C 120 I HD Absolute Maximum Ratings Symbol Conditions +, "5647 "5:, Values Units %- / 0 12 "+ / 3 4 % /  12 %- 8 / 0 12 %- / 0 12          9 3  4 4 %- 8 / 0 12          4 ; 0 12 %- 8 SEMICELL CAL-DIODE

Contextual Info: SKCD 81 C 120 I HD Absolute Maximum Ratings Symbol Conditions +, "5647 "5:, Values Units % - / 0 12 " + / 3 4 % /  12 %- 8 / 0 12 % - / 0 12          9 3  4 4 %- 8 / 0 12          4 ; 0 12 %- 8 SEMICELL CAL-DIODE

Contextual Info: SKCD 81 C 120 I3 Absolute Maximum Ratings Symbol Conditions +, "5647 "59, Values Units % - / 0 12 " + / 3 4 % /  12 %- 8 / 0 12 % - / 0 12         (   4 4 %- 8 / 0 12        : 4 ; 0 12 %- 8 SEMICELL CAL-DIODE

Contextual Info: SKCD 81 C 060 I3 Absolute Maximum Ratings Symbol Conditions +, "5647 "59, Values Units % - / 0 12 " + / 3 4 % /  12 %- 8 / 0 12 % - / 0 12          00  4 4 %- 8 / 0 12         4 : 0 12 %- 8 SEMICELL CAL-DIODE

Contextual Info: EMC1402 1°C Temperature Sensor with Beta Compensation PRODUCT FEATURES Datasheet GENERAL DESCRIPTION The EMC1402 is a high accuracy, low cost, System Management Bus SMBus temperature sensor. Advanced features such as Resistance Error Correction (REC), Beta Compensation (to support 90nm and 65nm

IGBT MOTOR CONTROL

Abstract: IGBT K 40 T 2002 MJ75
Contextual Info: MKI 75-06 A7 IC25 = 90 A = 600 V VCES VCE sat typ. = 2.1 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA Preliminary Data B3 Features IGBTs ● Conditions VCES TVJ = 25°C to 150°C Maximum Ratings ● ● 600 V ± 20 V 90 60 A A ICM = 120

A7t diode

Abstract: diode a7t 30-06 A7T L 3006 MWI 30-06 A7T 30-06A7T th 3006
Contextual Info: MWI 30-06 A7 MWI 30-06 A7T IGBT Modules Sixpack IC25 = 45 A VCES = 600 V VCE sat typ. = 1.9 V Short Circuit SOA Capability Square RBSOA 13 1 2 Preliminary Data Type: NTC - Option: MWI 30-06 A7 MWI 30-06 A7T without NTC with NTC 5 6 9 10 T NTC 16 15 14 3 4

NTC resistor T5

Abstract: MKI 75-06 A7
Contextual Info: MKI 75-06 A7 MKI 75-06 A7T IC25 = 90 A VCES = 600 V VCE sat typ.= 2.1 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA Type: 13 NTC - Option: MKI 75-06 A7 MKI 75-06 A7T T1 without NTC with NTC T T5 D1 1 9 2 10 D5 16 14 T2 T T6 D2 3 11 4 12

FDJ1028N

Abstract: SC75
Contextual Info: FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench MOSFET Features Applications • 3.2 A, 20 V. RDS ON = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V ■ Battery management General Description ■ Low gate charge ■ High performance trench technology for extremely low

SMD ZENER DIODE MARKING CODE G3

Abstract: marking code gc SMD zener PZU11 zener diode SMD marking code 27 4B pzuxb smd marking KD SMD MARKING GP 728 smd marking KH Zener diode smd marking h5 PZU13
Contextual Info: PZUxB series Single Zener diodes in a SOD323F package Rev. 01 — 7 March 2006 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOD323F SC-90 very small and flat lead Surface Mounted Device (SMD) plastic package.

Contextual Info: FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench MOSFET Features Applications • 3.2 A, 20 V. ■ Battery management RDS ON = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V ■ Low gate charge ■ High performance trench technology for extremely low

PS18

Abstract: SV18
Contextual Info: VDI 75-12P1 VII 75-12P1 VID 75-12P1 VIO 75-12P1 IC25 = 92 A = 1200 V VCES VCE sat typ. = 2.7 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 NTC X16 T16 NTC IK10 X16 AC1 F1 Pin arangement see outlines Features

Contextual Info: VDI 75-12P1 VII 75-12P1 VID 75-12P1 VIO 75-12P1 IC25 = 92 A = 1200 V VCES VCE sat typ. = 2.7 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 X15 F1 NTC Pin arangement see outlines Features Symbol Conditions

IRFR912

Contextual Info: IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S

SON50P300X300X80-11WEED3M

Contextual Info: A8480 Boost Regulator for Display Bias or LED Driver Features and Benefits Description ▪ Output disconnect during shutdown ▫ 1 A shutdown current ▪ 2.7 to 9 V input ▫ Operate with 1 or 2 Li+ battery input supply ▪ Output voltage up to 23 V ▪ 1.2 MHz switching frequency