DIODE B3 7 Search Results

FCH20U10

Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

schottky barrier diode b22

Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

Contextual Info: • International S Rectifier 4Ö554S2 001b?b3 TbO ■ INR INTERNATIONAL RECTIFIER bSE » SERIES IRK.F112 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate

Contextual Info: bbS3 T3 i 00 2 b3 ^b 73a h a p x Philips Semiconductors Preliminary specification BB134 UHF variable capacitance diode N AUER PHILIPS/DISCRETE blE J> Q U IC K R E F E R E N C E DATA DESCRIPTION The BB134 is a silicon, double-implanted variable capacitance diode in planar

smd diode B3

Abstract: GHB-1206L-B3
Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1206L-B3 Features !3.2mmx1.6mm !LOW POWER !WIDE !IDEAL Description SMT LED, 1.8mm THICKNESS. The Blue source color devices are made CONSUMPTION. with GaN on Sapphire Light Emitting Diode.

TY SMD diode

Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-PLCC-B3 Features Description !SINGLE COLOR. The Blue source color devices are made with !SUITABLE FOR ALL SMT ASSEMBLY AND SOLDER PROCESS. !IDEAL InGaN on SiC Light Emitting Diode.

Contextual Info: SKCD 81 C 060 I3 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions +, "5647 "59, Values Units %- / 0 12 "+ / 3 4

Contextual Info: SKCD 81 C 120 I3 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions +, "5647 "59, Values Units %- / 0 12 "+ / 3 4

IF110

Abstract: ISOPLUS247
Contextual Info: Preliminary Technical Information IXGR72N60B3D1 GenX3TM B3-Class IGBT w/Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 40A 1.80V 90ns Medium Speed Low Vsat PT IGBTs for 5-40 kHz Switching ISOPLUS 247TM Symbol Test Conditions

1SS184

Abstract: marking code b3 reverse recovery time
Contextual Info: 1SS184 SILICON EPITAXIAL PLANAR DIODE Features 3 • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 1 2 Marking Code: B3 SOT-23 Plastic Package Applications Ultra high speed switching application Absolute Maximum Ratings Tj = 25OC

Contextual Info: Preliminary Technical Information GenX3TM B3-Class IGBT w/Diode VCES IC110 VCE sat tfi(typ) IXGR72N60B3D1 (Electrically Isolated Back Surface) = = ≤£ = 600V 40A 1.80V 90ns Medium Speed Low Vsat PT IGBTs for 5-40 kHz Switching ISOPLUS 247TM Symbol Test Conditions

Contextual Info: SKCD 81 C 120 I HD power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions +, "5647 "5:, Values Units %- / 0 12 "+ / 3 4

marking code b3

Abstract: 1SS184
Contextual Info: 1SS184 SILICON EPITAXIAL PLANAR DIODE Features 3 • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 1 2 Marking Code: B3 SOT-23 Plastic Package Applications Ultra high speed switching application Absolute Maximum Ratings Tj = 25OC

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS184 SOT-23 Switching Diode FEATURES y Low forward voltage y Fast reverse recovery time MARKING: B3 1 3 2 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage

150GB123D

Contextual Info: SKM 150GB123D Absolute Maximum Ratings Symbol Conditions IGBT *5 &* &*8 95 1<58+1& = 1  + + 4* /300 Inverse diode SEMITRANSTM 3 IGBT Modules & &(8 1 2 /3 70 4* 2 .  &( 2 .0 A  ?A 1; 2 .30 4* .30 .00 /00 + + .00 + /00 .B3 B00 + +

semicell

Contextual Info: SKCD 81 C 120 I3SEMIKRON, leading manufacturer of diode thyristor power semicondictor modules Absolute Maximum Ratings Symbol Conditions +, "5647 "59, Values Units %- / 0 12 "+ / 3 4 % /  12 %- 8 / 0 12 %- / 0 12         ( 

2SC3997

Abstract: HPA150R 2SC4636 2SC3676 2SC4450 TR 2SC3997 2SC3894 2SC3895 DD52RC DD54RC
Contextual Info: b3 E D • 7 cl t17Q7b DG12M3D QTM » T S A J _ m_ ^ S A f t Y O Transistors for Very High-Definition CRT Display H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 2 & Horizontal Output Use with High-speed Damper Diode (Adoption of MBIT Process)(Ta=25t)

Contextual Info: SKCD 81 C 060 I3SEMIKRON, leading manufacturer of diode thyristor power semicondictor modules Absolute Maximum Ratings Symbol Conditions +, "5647 "59, Values Units %- / 0 12 "+ / 3 4 % /  12 %- 8 / 0 12 %- / 0 12          00

Contextual Info: SKCD 81 C 120 I HDSEMIKRON, leading manufacturer of diode thyristor power semicondictor modules Absolute Maximum Ratings Symbol Conditions +, "5647 "5:, Values Units %- / 0 12 "+ / 3 4 % /  12 %- 8 / 0 12 %- / 0 12         

Contextual Info: SKCD 81 C 120 I3 Absolute Maximum Ratings Symbol Conditions +, "5647 "59, Values Units % - / 0 12 " + / 3 4 % /  12 %- 8 / 0 12 % - / 0 12         (   4 4 %- 8 / 0 12        : 4 ; 0 12 %- 8 SEMICELL CAL-DIODE

Contextual Info: SKCD 81 C 060 I3 Absolute Maximum Ratings Symbol Conditions +, "5647 "59, Values Units % - / 0 12 " + / 3 4 % /  12 %- 8 / 0 12 % - / 0 12          00  4 4 %- 8 / 0 12         4 : 0 12 %- 8 SEMICELL CAL-DIODE

Contextual Info: SKCD 81 C 120 I HD Absolute Maximum Ratings Symbol Conditions +, "5647 "5:, Values Units %- / 0 12 "+ / 3 4 % /  12 %- 8 / 0 12 %- / 0 12          9 3  4 4 %- 8 / 0 12          4 ; 0 12 %- 8 SEMICELL CAL-DIODE

Contextual Info: SKCD 81 C 120 I HD Absolute Maximum Ratings Symbol Conditions +, "5647 "5:, Values Units % - / 0 12 " + / 3 4 % /  12 %- 8 / 0 12 % - / 0 12          9 3  4 4 %- 8 / 0 12          4 ; 0 12 %- 8 SEMICELL CAL-DIODE

diode b3

Abstract: MII 75-12 A3 resistor catalog 30-12A6 grease diode 12A3 B3-12 75-12A3 200-12A4 10-06A6
Contextual Info: IGBT Modules B3 1999 IXYS All rights reserved B3 - 1 IGBT Modules Contents Package style VCES IC VCE sat Type Page TC = 25° C TC = 25° C max. V A V 1200 35 3.0 MWI 35-12A5 B3- 4 50 3.0 MWI 50-12A5 B3- 8 75 3.0 MWI 75-12A5 B3-12 75 3.0 MII 75-12A3 MID 75-12A3