DIODE B12 Search Results
DIODE B12 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE B12 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: 120W 9xx nm High Power Bare Laser Diode Bar Features • Bare 10mm x 2.4mm laser diode bar • 120W operating power B120C-9xx-01 • Highly reliable single quantum well MBE structure The Bookham B120C-9xx-01 bare laser diode bar series has been designed to provide the increased brightness |
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b120c-9xx-01915nm940nm980nm+1 | |
BCS028N06NS
Abstract: 028N06NS DC1502
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dc1502altc4359hdcb2v/20altc4359+4 | |
FCH20U10
Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
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od-123o-220f-2pino-251o-252+14 | |
DIODE B12 51
Abstract: heat exchanger power led heat sink ASM01C020 ASM14 australia heat sink ASM02C040 ASM05C060 44In42Sn14Cd
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785-1064nmlaser2000b-12/99diode b12 51+8 | |
schottky barrier diode b22
Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
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od-123o-220f-2pino-251o-252+14 | |
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Contextual Info: DIODE MODULE DDH0F/KD110F Power Diode Module D D 1 1 OF series are designed for various rectifier circuits. DD 1 1 OF has two diode chips connected in series in 25 mm linch width package and the mounting base is electri cally isolated from elements for simple heatsink construction. |
OCR Scan |
ddh0f/kd110fdd110f-40ddtlof-80dd110f-120+4 | |
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Contextual Info: DIODE MODULE D D 160F UL;E76102 M Power Diode Module D D 16 0 F series are designed for various rectifier circuits. DD 1 6 0 F has two diode chips connected in series in a package and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up |
OCR Scan |
e76102dd160f-40dd160f-80dd160f-120+6 | |
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Contextual Info: Photo IC diode assemblies S10108, S10109 For flame eye, using photo IC diode instead of CdS cell The S10108 and S10109 sensors are designed specifically for flame detection flame eye in oil-fired hot water boilers and heaters. These sensors incorporate a photo IC diode instead of CdS cells and are available with 2 types of incident light |
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s10108s10109b1201kpic1066e02 | |
5B12
Abstract: FP50R06W2E3 WG01 KT4I
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fp50r06w2e35b12wg01kt4i | |
C532 diode
Abstract: b16/41289
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fp50r06w2e314bbfba4f32f223b+4 | |
diode rj 93
Abstract: IHD06N60RA B127 9C13 Z8B00003328 bk 36
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ihd06n60radiode rj 93b1279c13+2 | |
RB160-40
Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
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cdsl4148ll4148pmll4148rls4148+14 | |
DIODE W1 SMD
Abstract: DIODE B12 B12 DIODE smd diode code B12 W1 diode diode w1 TSS0230L smd diode w1 smd diode b12 smd diode code A
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tss0230l0402dfn1006c/10smil-std-202+9 | |
Mbd4448
Abstract: W1 sot 363 HSDW Sot-363 11* SOT-363 mbd4448ht 208 SOT-363 MBD4448HTW MBD4448HAQW P0 sot 363
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mbd4448haqw/hadw/hcdw/hsdw/htwot-363mil-std-202c/10s+12 | |
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BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
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mmbd4148200maot-23mbr0540+16 | |
77C7
Abstract: 887c 1r12r
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77c7887c1r12r | |
R222 smd
Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
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ca-001175ba41-00418aba62-00194aba62-00306a+14 | |
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Contextual Info: SOLID STATE D I V I S I O N LIGHT EMITTING DIODE LED Light Emitting Diode Light emitting diodes LEDs are opto-semiconductors that convert electric energy into light energy. Compared to semiconductor lasers (laser diodes or LD), LEDs offer advantages such |
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dk-8381kled0002e01 | |
marking B12 diode SCHOTTKY
Abstract: DIODE B12 smd diode code B12 B12 DIODE smd marking b12 marking B12 diode smd diode b12 diode marking code B12 TSC Date Code marking smd diode marking code g
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rb520g-30od-723fmil-std-202c/10s+10 | |
samsung r540
Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
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zd500qf500rhu002n06200ma+16 | |
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Contextual Info: RB520G-30 Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-723F B Features A C Ultra smail mold type,high reliability,low IR low VF Surface device type mounting D Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate |
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rb520g-30od-723fmil-std-202 | |
IR 1838 T
Abstract: B120 HFA06TB120 HFA16TB120 IRFP250
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pd-95740hfa16tb120pbf260nchfa16tb120+5 | |
IR 1838
Abstract: IRFP250 datasheet B120 HFA06TB120 HFA16TB120 IRFP250
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pd-95740hfa16tb120pbf260nchfa16tb120+5 | |
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Contextual Info: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing |
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pd-95740hfa16tb120pbf260nchfa16tb120+1 | |