DIODE B12 Search Results

BCS028N06NS

Abstract: 028N06NS DC1502
Contextual Info: DEMO MANUAL DC1502A LTC4359HDCB 12V/20A Ideal Diode with Reverse Input Protection DESCRIPTION Demonstration circuit 1502A showcases the LTC 4359 ideal diode controller with reverse input protection. The board includes two independent LTC4359 ideal diode circuits, sharing a common ground and operating over a

FCH20U10

Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

schottky barrier diode b22

Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

Contextual Info: DIODE MODULE DDH0F/KD110F Power Diode Module D D 1 1 OF series are designed for various rectifier circuits. DD 1 1 OF has two diode chips connected in series in 25 mm linch width package and the mounting base is electri­ cally isolated from elements for simple heatsink construction.

Contextual Info: DIODE MODULE D D 160F UL;E76102 M Power Diode Module D D 16 0 F series are designed for various rectifier circuits. DD 1 6 0 F has two diode chips connected in series in a package and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up

Contextual Info: Photo IC diode assemblies S10108, S10109 For flame eye, using photo IC diode instead of CdS cell The S10108 and S10109 sensors are designed specifically for flame detection flame eye in oil-fired hot water boilers and heaters. These sensors incorporate a photo IC diode instead of CdS cells and are available with 2 types of incident light

5B12

Abstract: FP50R06W2E3 WG01 KT4I
Contextual Info: Technische Information / technical information FP50R06W2E3_B11 IGBT-Module IGBT-modules EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT3 und Emitter Controlled3 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode

C532 diode

Abstract: b16/41289
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FP50R06W2E3_B11 EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT3 und Emitter Controlled3 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode

RB160-40

Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
Contextual Info: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148

DIODE W1 SMD

Abstract: DIODE B12 B12 DIODE smd diode code B12 W1 diode diode w1 TSS0230L smd diode w1 smd diode b12 smd diode code A
Contextual Info: TSS0230L SMD Schottky Barrier Diode Small Signal Diode 0402（DFN1006） Features Halogen free low forward voltage Designed for mounting on small surface Extremely thin/leadless package Majority carrier conduction Green compound Halogen free with suffix "G" on

Mbd4448

Abstract: W1 sot 363 HSDW Sot-363 11* SOT-363 mbd4448ht 208 SOT-363 MBD4448HTW MBD4448HAQW P0 sot 363
Contextual Info: MBD4448HAQW/HADW/HCDW/HSDW/HTW Switching Diode Small Signal Diode SOT-363 Features Fast switching speed Surface device type mounting Moisture sensitivity level 1 High Conductance Power Dissipation For General Purpose Switching Applications Pb free version and RoHS compliant

marking B12 diode SCHOTTKY

Abstract: DIODE B12 smd diode code B12 B12 DIODE smd marking b12 marking B12 diode smd diode b12 diode marking code B12 TSC Date Code marking smd diode marking code g
Contextual Info: RB520G-30 Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-723F B Features A C —Ultra smail mold type,high reliability,low IR low VF —Surface device type mounting D —Moisture sensitivity level 1 —Matte Tin Sn lead finish with Nickel(Ni) underplate

IR 1838 T

Abstract: B120 HFA06TB120 HFA16TB120 IRFP250
Contextual Info: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing

IR 1838

Abstract: IRFP250 datasheet B120 HFA06TB120 HFA16TB120 IRFP250
Contextual Info: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing

Contextual Info: TESDC24V Bi-directional ESD Protection Diode Small Signal Diode SOD-323 Features —Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) —Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs) —Protects one birectional I/O line —Working Voltage : 24V —Pb free version, RoHS compliant, and Halogen free

MT5C1008DCJ-45/SMD a06t transistor

Contextual Info: PD-95737 HFA08TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits VF typ. * = 1.4V IF(AV) = 8.0A 4 Qrr (typ.)= 65nC IRRM = 5.0A 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation

a06t

Abstract: hfa08tb60pbf B120 HFA08TB60 IRFP250
Contextual Info: PD-95737 HFA08TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits VF typ. * = 1.4V IF(AV) = 8.0A 4 Qrr (typ.)= 65nC IRRM = 5.0A 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation

Contextual Info: DIO DE MODULE DD130F Power Diode Module DD13 0 F series are designed for various rectifier circuits. DD 1 3 0 F has two diode chips connected in series in a package and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up

Contextual Info: DIODE THREE PHASES BRIDGE TYPE DF20AA Power Diode Module D F 2 0 A A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electri­ cally isolated from semiconductor elements for simple heatsink

transistor BC 667

Abstract: bc 301 transistor A3026 transistor bc 325 two transistor forward differential pair cascode la3026 transistor differential amplifier MONOLITHIC DIODE ARRAYS MA3036
Contextual Info: MA3018 • JA3018A • pA3019 • mA3026 • pA3036 MA3039 • |jA3045 • pA3046 • \i A3054 • mA3086 TRANSISTOR AND DIODE ARRAYS FA IR CH ILD LINEAR INTEGRATED CIRCUITS G E N E R A L D E S C R IP T IO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed

Contextual Info: Features • ■ ■ Applications Low profile package Surface mount Very low forward voltage drop ■ ■ ■ ■ ■ Cellular phones PDAs Desktop PCs and notebooks Digital cameras MP3 players CD1607-B120 ~ B140L Schottky Barrier Rectifier Chip Diode General Information

Contextual Info: Features • ■ ■ Applications Low profile package Surface mount Very low forward voltage drop ■ ■ ■ ■ ■ Cellular phones PDAs Desktop PCs and notebooks Digital cameras MP3 players CD1607-B120 ~ B140L Schottky Barrier Rectifier Chip Diode General Information

c650 diode

Abstract: C2F SOT23 C2F transistor sot23 3304N g5500as TISP4C015L1N PT6102xL 2026-35-C2F 4A12P-1AH-12R5 B1250T
Contextual Info: Bourns Solutions for Telecom Voice, VDSL & Ethernet Applications Short Form Brochure Telcordia GR-1089-CORE SLIC Protection Solution A B1250T Switching Diode 2026-35-C2F SLIC Clamp -VBAT P850-G Feature Characteristics Package type and size TBU DFN: 8.25 x 4 mm

DIODE C04 10

Abstract: DIODE B12 DIODE B12 45 DIODE 40 C04 "Four Digit Numeric Displays" Kingbright 7 segment CA04-14EWA CA04-14GWA CA04-14HWA 27C042
Contextual Info: Kingbright 10.16mm 0.4INCH FOUR DIGIT NUMERIC DISPLAYS CA04-14 CA04-14-B12.0 Features Description l0.4 INCH DIGIT HEIGHT The Bright Red source color devices are made with Gallium Phosphide Red Light Emitting Diode. lLOW CURRENT OPERATION. The Green source color devices are made with Gallium