Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE B105 Search Results

    DIODE B105 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet
    CUZ8V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Datasheet
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    DIODE B105 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: DIODE MODULE PD100GB/KP100GB_ UL;E76102 M Power Diode Module DD1 OOGB series are designed for various rectifier circuits. DD 1 OOGB has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 800 V


    OCR Scan
    pd100gb/kp100gb_e76102dd100gb-40ddioogb-80+1b-106 PDF

    FMXA-1106S

    Abstract: XA1106 Diode XA1106 FMX-G26S sanken lot number B105 CF35 SANKEN power supply SANKEN smps
    Contextual Info: Ultrafast Recovery Diode FMXA-1106S •General Description November, 2005 ■Package-TO220F-2Pin Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a fast recovery diode


    Original
    fmxa-1106spackage---to220f-2pind01-002ea-051128xa1106+7diode xa1106fmx-g26ssanken lot numberb105cf35sanken power supplysanken smps PDF

    XA1106

    Abstract: Diode XA1106 FMXG26 FMX-G26S FMXA-1106S sanken lot number B105 Sanken marking SANKEN power supply
    Contextual Info: Ultrafast Recovery Diode FMXA-1106S •General Description November, 2005 ■Package-TO220F-2Pin Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a fast recovery diode


    Original
    fmxa-1106spackage---to220f-2pind01-002ea-051128xa1106+7diode xa1106fmxg26fmx-g26ssanken lot numberb105sanken markingsanken power supply PDF

    MPEN-230AF

    Abstract: sanken sanken power transistor CF35
    Contextual Info: Schottky Barrier Diode MPEN-230AF December. 2005 •General Description ■Package-TO-262 High Voltage Schottky Barrier Diode 100V . The low leakage current and low VF have been achieved by using the optimum barrier metal. ■Applications • DC-DC converters


    Original
    mpen-230afpackage---to-262100vguaranteed01-006ea-051202+3sankensanken power transistorcf35 PDF

    diode B105

    Abstract: Sanken catalogue MPEN-230AF
    Contextual Info: Schottky Barrier Diode MPEN-230AF December. 2005 •General Description ■Package-TO-262 High Voltage Schottky Barrier Diode 100V . The low leakage current and low VF have been achieved by using the optimum barrier metal. ■Applications • DC-DC converters


    Original
    mpen-230afpackage---to-262100vguaranteed01-006ea-051202+2diode b105sanken catalogue PDF

    d0109

    Abstract: sanken power transistor FMEN-210A 210A
    Contextual Info: Schottky Barrier Diode FMEN-210A March, 2006 •General Description ■Package-TO220F FMEN-210A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications • DC-DC converters


    Original
    fmen-210apackage---to220fd01-090ea-060310d0109+2sanken power transistor210a PDF

    Contextual Info: Schottky Barrier Diode FMEN-220A March, 2006 General Description Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications DC-DC converters


    Original
    fmen-220apackage---to220fd01-010ea-060310 PDF

    FME-220B

    Abstract: sanken power transistor CF35 FME220 sanken
    Contextual Info: Schottky Barrier Diode FME-220B April. 2007 •General Description ■Package-TO220F FME-220B is a High Voltage 150V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ●DC-DC converters


    Original
    fme-220bpackage---to220f150vguaranteed01-013ea-070323+4sanken power transistorcf35fme220sanken PDF

    FMEN-210A

    Abstract: FMEN210
    Contextual Info: Schottky Barrier Diode FMEN-210A March, 2006 •General Description ■Package-TO220F FMEN-210A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications • DC-DC converters


    Original
    fmen-210apackage---to220fd01-090ea-060310fmen210 PDF

    FME-210B

    Abstract: CF35 210B
    Contextual Info: Schottky Barrier Diode FME-210B April. 2007 •General Description ■Package-TO220F FME-210B is a High Voltage 150V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ●DC-DC converters


    Original
    fme-210bpackage---to220f150vguaranteed01-012ea-070322+2cf35210b PDF

    FMEN-220A

    Contextual Info: Schottky Barrier Diode FMEN-220A March, 2006 •General Description ■Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ● DC-DC converters


    Original
    fmen-220apackage---to220f0e-01d01-010ea-060310 PDF

    Contextual Info: Schottky Barrier Diode FMEN-210A March, 2006 General Description Package-TO220F FMEN-210A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications • DC-DC converters


    Original
    fmen-210apackage---to220fd01-090ea-060310 PDF

    FME-210B

    Abstract: sanken CF35 Sanken catalog
    Contextual Info: Schottky Barrier Diode FME-210B April. 2007 •General Description ■Package-TO220F FME-210B is a High Voltage 150V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ●DC-DC converters


    Original
    fme-210bpackage---to220f150vguaranteed01-012ea-070322+3sankencf35sanken catalog PDF

    sanken power transistor

    Abstract: CF35 FMEN-220A sanken DSA0016518 Sanken catalog "Sanken Rectifiers"
    Contextual Info: Schottky Barrier Diode FMEN-220A March, 2006 •General Description ■Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ● DC-DC converters


    Original
    fmen-220apackage---to220f0e-01d01-010ea-060310+6sanken power transistorcf35sankendsa0016518sanken catalogsanken rectifiers PDF

    Contextual Info: Schottky Barrier Diode MPEN-230AF General Description December. 2005 Package-TO-262 High Voltage Schottky Barrier Diode 100V . The low leakage current and low VF have been achieved by using the optimum barrier metal. Applications • DC-DC converters • AC adapter


    Original
    mpen-230afpackage---to-262100vguaranteed01-006ea-051202 PDF

    Diode XA1106

    Abstract: XA1106
    Contextual Info: Ultrafast Recovery Diode FMXA-1106S General Description November, 2005 Package-TO220F-2Pin Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a fast recovery diode FRD for a continuous-current-mode PFC circuit.


    Original
    fmxa-1106spackage---to220f-2pind01-002ea-051128diode xa1106+1xa1106 PDF

    2SK3711

    Abstract: SK3711 051124 sanken power transistor B105 CF35 MT100 sanken MOSFET DSA0016517 N CH MOSFET
    Contextual Info: 60V N -ch MOSFET 2SK3711 December 2005 •Package—TO3P ■Features • Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed ■Applications • Electric power steering • High current switching ■Equivalent circuit


    Original
    2sk3711t02-002ea-051124sk3711051124+7sanken power transistorb105cf35mt100sanken mosfetdsa0016517n ch mosfet PDF

    051124

    Abstract: 2SK3711 B105 MT100 SK3711 sanken
    Contextual Info: 60V N -ch MOSFET 2SK3711 December 2005 •Package—TO3P ■Features • Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed ■Applications • Electric power steering • High current switching ■Equivalent circuit


    Original
    2sk3711t02-002ea-051124051124b105+3mt100sk3711sanken PDF

    SANKEN power supply

    Abstract: XB2102 sanken lot number B105 FMXB-2102
    Contextual Info: Fast Recovery Diode with built-in SBD for temperature detection FMXB-2102 December, 2005 •General Description ■Package-TO220F-2Pin An SBD for overheating detection is incorporated together with a secondary side rectification FRD into a TO220F package.


    Original
    fmxb-2102package---to220f-2pino220fd01-005ea-051215+4sanken power supplyxb2102sanken lot numberb105 PDF

    XB2102

    Abstract: D01-005EA-051215 fire alarm using thermistor sanken lot number SANKEN power supply Sanken marking B105 CF35 FMXB-2102 ray 40
    Contextual Info: Fast Recovery Diode with built-in SBD for temperature detection FMXB-2102 December, 2005 •General Description ■Package-TO220F-2Pin An SBD for overheating detection is incorporated together with a secondary side rectification FRD into a TO220F package.


    Original
    fmxb-2102package---to220f-2pino220fd01-005ea-051215+8xb2102fire alarm using thermistorsanken lot numbersanken power supplysanken markingb105cf35ray 40 PDF

    sanken power transistor

    Abstract: CF35 SANKEN DIODE 5a schottky axial RW54 B105 10E01 diode ir ALLEGRO MICROSYSTEMS
    Contextual Info: Schottky Barrier Diode RW54 July 2006 •General Description ■Package RW54 is an SBD for the high power current of 5A guarantee. Low forward voltage drop and excellent switching characteristics have been achieved. Φ6.5 axial ■Applications •DC-DC converters


    Original
    0e-010e-020e-03d01-011ea-060629+8sanken power transistorcf35sanken diode5a schottky axialrw54b10510e01 diode irallegro microsystems PDF

    Contextual Info: 60V N -ch MOSFET 2SK3711 December 2005 Package—TO3P Features • Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed Applications • Electric power steering • High current switching Equivalent circuit D 2


    Original
    2sk3711t02-002ea-051124 PDF

    RW54

    Abstract: B105
    Contextual Info: Schottky Barrier Diode RW54 July 2006 •General Description ■Package RW54 is an SBD for the high power current of 5A guarantee. Low forward voltage drop and excellent switching characteristics have been achieved. Φ6.5 axial ■Applications •DC-DC converters


    Original
    0e-010e-020e-03d01-011ea-060629+2rw54b105 PDF

    EKV550

    Abstract: B105
    Contextual Info: 50V N-ch MOSFET EKV550 January. 2006 •Features ■Package—TO-220 • Low on-resistance • Avalanche energy capability guaranteed • Built-in Gate protection diode against electrostatic discharge ESD ■Applications • DC-DC Converters • High speed switching


    Original
    ekv550package--to-220t02-005ja-060111b105 PDF