DIODE A1 7 Search Results

Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material

Contextual Info: STPSC12H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC12H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material

Contextual Info: STPSC8H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC8H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

Contextual Info: STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 1 K (2) A2 (3) A2 A1 K TO-220AB STPSC20H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

6A1 diode

Abstract: 7006S VPS05604
Contextual Info: BAS 70-06S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 6 • Circuit protection • Voltage clamping • High-level detecting and mixing 2 A1/A2 C2 C1 6 5 4 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking

EHA07182

Abstract: BAV70S VPS05604 6C12 5a2 DIODE C2A26 marking 5a2
Contextual Info: BAV 70S Silicon Switching Diode Array 4 5 • For high-speed switching applications 6 • Internal galvanic isolated diode arrays in one package • Common cathode 2 3 1 VPS05604 C1/C2 A2 6 5 A1 4 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70S A4s

Pin diode G4S

Abstract: BAR63-04W BAR63-05W BAR63 BAR63-06W VSO05561 diode C2 marking c2 diode diode MARKING A1 marking G5s
Contextual Info: BAR63.W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR63-04W BAR63-05W C1/A2 3 BAR63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181

bav99w A7S

Abstract: BAV99W VSO05561
Contextual Info: BAV99W Silicon Switching Diode Array 3
For high-speed switching applications
Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage

Marking a1s

Abstract: BAW56W VSO05561
Contextual Info: BAW56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type BAW56W Marking A1s 1 = C1 Pin Configuration 2 = C2 3 = A1/A2 Package SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage

BAV70W

Abstract: VSO05561 10TSV
Contextual Info: BAV70W Silicon Switching Diode Array 3
For high-speed switching applications
Common cathode 2 C1/C2 3 1 1 2 A1 A2 VSO05561 EHA07179 Type Marking BAV70W A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage

BAV99T

Abstract: SC75
Contextual Info: BAV99T Silicon Switching Diode 3 • For high-speed switching applications • Connected in series 2 C1/A2 3 1 1 2 A1 C2 VPS05996 EHA07181 Type Marking BAV99T A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SC75 Maximum Ratings Parameter Symbol Diode reverse voltage

SC75

Abstract: BAV70T
Contextual Info: BAV70T Silicon Switching Diode Array 3
For high-speed switching applications
Common cathode 2 C1/C2 3 1 1 2 A1 A2 VPS05996 EHA07179 Type Marking BAV70T A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SC75 Maximum Ratings Parameter Symbol Diode reverse voltage

VSO05561

Contextual Info: BAW 56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type Marking BAW 56W A1s Pin Configuration 1 = C1 2 = C2 Package 3 = A1/A2 SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage

BAV70U

Abstract: SC74 10325v
Contextual Info: BAV70U Silicon Switching Diode Array 5
For high-speed switching applications 4 6
Internal galvanic isolated diode arrays in one package 3
Common cathode 2 1 C1/C2 A2 A1 6 5 4 VPW09197 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV70U A4s Pin Configuration

BAW56S

Abstract: 6A1 diode VPS05604
Contextual Info: BAW56S Silicon Switching Diode Array 4
For high-speed switching applications 5 6
Common anode
Internal galvanic isolated diode arrays in one package A1/A2 C2 C1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW56S A1s Pin Configuration

HFA120EA60

Abstract: HFA120FA60
Contextual Info: PD -2.531 HFA120FA60, HFA120EA60 HEXFRED TM Ultrafast, Soft Recovery Diode VR = 600V VF typ. * = 1.4V IF(AV) = 60A Qrr (typ.) = 270nC IRRM (typ.) = 7.0A trr(typ.) = 65ns di(rec)M/dt (typ.)* = 270A/µs K2 A2 A2 K1 K1 A1 K2 A1 HFA120FA60 HFA120EA60 Features

6A1 diode

Contextual Info: BAW 56U Silicon Switching Diode Array
For high-speed switching applications 5 4 6
Common anode
Internal galvanic isolated diode arrays in one package 3 A1/A2 C2 C1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW 56U A1s Pin Configuration

6A1 diode

Abstract: BAS70-06S VPS05604
Contextual Info: BAS70-06S Silicon Schottky Diode Array 4
General-purpose diode for high-speed switching 5 6
Circuit protection
Voltage clamping
High-level detecting and mixing 2 A1/A2 C2 C1 6 5 4 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAS70-06S

Qrr50

Abstract: STTH6110TV1 STTH6110TV2 JESD97 STTH6110TV
Contextual Info: STTH6110TV Ultrafast recovery - high voltage diode Main product characteristics IF AV 2 x 30 A VRRM 1000 V Tj 150° C VF (typ) 1.3 V trr (typ) 42 ns A1 K1 A1 K2 A2 K2 K1 A2 A1 Features and benefits • Ultrafast, soft recovery ■ Very low conduction and switching losses

Contextual Info: STTH6110TV Ultrafast recovery - high voltage diode Main product characteristics IF AV 2 x 30 A VRRM 1000 V Tj 150° C VF (typ) 1.3 V trr (typ) 42 ns A1 K1 A1 K2 A2 K2 K1 A2 A1 Features and benefits • Ultrafast, soft recovery ■ Very low conduction and switching losses

Contextual Info: STTH1002C HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF AV Up to 2 x 8A A1 VRRM 200 V A2 Tj (max) 175 °C VF (typ) 0.78 V trr (typ) 20 ns K A2 FEATURES AND BENEFITS • ■ ■ ■ ■ ■ A1 A2 K A1 I2PAK STTH1002CR TO-220AB STTH1002CT

Contextual Info: STTH12010TV Ultrafast recovery - high voltage diode Main product characteristics IF AV 2 x 60 A VRRM 1000 V Tj 150° C VF (typ) 1.30 V trr (typ) 49 ns A1 K1 A1 K2 A2 K2 K1 A2 A1 Features and benefits • Ultrafast, soft recovery ■ Very low conduction and switching losses

STTH120R04TV1

Abstract: st 358 JESD97 STTH120R04TV STTH120R04TV2
Contextual Info: STTH120R04TV Ultrafast recovery diode Main product characteristics IF AV 2 x 60 A VRRM 400 V Tj 150° C VF (typ) 0.95 V trr (typ) 31 ns A1 K1 A1 K2 A2 K2 K1 A2 A1 Features and benefits • Ultrafast ■ Very low switching losses ■ High frequency and high pulsed current