DIODE A1 7 Search Results

Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material

bav99w A7S

Abstract: BAV99W VSO05561
Contextual Info: BAV99W Silicon Switching Diode Array 3
For high-speed switching applications
Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage

Marking a1s

Abstract: BAW56W VSO05561
Contextual Info: BAW56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type BAW56W Marking A1s 1 = C1 Pin Configuration 2 = C2 3 = A1/A2 Package SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage

BAV70W

Abstract: VSO05561 10TSV
Contextual Info: BAV70W Silicon Switching Diode Array 3
For high-speed switching applications
Common cathode 2 C1/C2 3 1 1 2 A1 A2 VSO05561 EHA07179 Type Marking BAV70W A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage

Contextual Info: STTH9012TV Ultrafast recovery - 1200 V diode Main product characteristics IF AV 2 x 45 A VRRM 1200 V Tj 150° C VF (typ) 1.20 V trr (typ) 50 ns K2 A2 A2 K1 K1 A1 K2 A1 STTH9012TV2 STTH9012TV1 A1 Features and benefits • Ultrafast, soft recovery ■ Very low conduction and switching losses

Contextual Info: STTH61R04TV Ultrafast recovery diode Main product characteristics IF AV 2 x 30 A VRRM 400 V Tj 150° C VF (typ) 0.95 V trr (typ) 24 ns A1 K1 A1 K2 A2 K2 K1 A2 A1 Features and benefits • Ultrafast ■ Very low switching losses ■ High frequency and high pulsed current

Contextual Info: STTH6112TV Ultrafast recovery - 1200 V diode Main product characteristics IF AV 2 x 30 A VRRM 1200 V Tj 150° C VF (typ) 1.30 V trr (typ) K2 A2 K1 A1 K1 K2 A1 STTH6112TV2 STTH6112TV1 45 ns A2 A1 Features and benefits • Ultrafast, soft recovery ■ Very low conduction and switching losses

Contextual Info: APTDF400AK100G Diode Phase leg Power Module VRRM = 1000V IC = 400A @ Tc = 70°C Application K1 • • • • • A1/K2 Anti-Parallel diode Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Features • • • •

k1 522

Abstract: APT0502 APTDF400AK100G
Contextual Info: APTDF400AK100G Diode Phase leg Power Module VRRM = 1000V IC = 400A @ Tc = 70°C Application K1 • • • • • A1/K2 Anti-Parallel diode Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Features • • • •

Contextual Info: STTH1002C-Y Automotive high efficiency ultrafast diode Features A1 • Suited for SMPS K A2 ■ Low losses ■ Low forward and reverse recovery times ■ High junction temperature ■ Low leakage current ■ AEC-Q101 qualified K K K A2 K A1 Description DPAK

Contextual Info: STPS30SM60C Power Schottky rectifier Features • A1 K High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A2 K K A2 A2 Description A1 The STPS30SM60C is a dual diode Schottky rectifier, suited for high frequency switch mode

Contextual Info: STPS20M60C Power Schottky rectifier Features • A1 K High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A2 K K A2 A2 Description A1 The STPS20M60C is a dual diode Schottky rectifier, suited for high frequency switch mode

STTA9012TV1

Abstract: STTA9012TV2
Contextual Info: STTA9012TV1/2  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 45A VRRM 1200V trr (typ) 65ns VF (max) 1.85V K2 A2 A2 K1 K1 A1 K2 A1 STTA9012TV1 STTA9012TV2 FEATURES AND BENEFITS ULTRA-FAST, SOFT AND NOISE-FREE

STTA12006TV1

Abstract: STTA12006TV2 STTA6006P TRANSISTOR mosfet k2
Contextual Info: STTA6006P STTA12006TV1/2  TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 60A / 2 x 60A VRRM 600V trr (typ) 45ns VF (max) 1.5V K2 A2 A2 K1 K1 A1 K2 A1 STTA12006TV1 STTA12006TV2 FEATURES AND BENEFITS SPECIFICTO ”FREEWHEEL MODE”OPERATIONS:

STTA12006TV1

Abstract: STTA12006TV2 STTA6006P
Contextual Info: STTA6006P STTA12006TV1/2 TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 60A / 2 x 60A VRRM 600V trr (typ) 45ns VF (max) 1.5V K2 A2 A2 K1 K1 A1 K2 A1 STTA12006TV1 STTA12006TV2 FEATURES AND BENEFITS SPECIFIC TO "FREEWHEEL MODE" OPERATIONS:

STTA3006P

Abstract: STTA3006PI STTA6006P STTA6006TV1 STTA6006TV2
Contextual Info: STTA3006P/PI STTA6006TV1/2 TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 30A / 2 x 30A VRRM 600V trr (typ) 35ns VF (max) 1.5V FEATURES AND BENEFITS K2 A2 A2 K1 K1 A1 K2 A1 STTA6006TV1 SPECIFIC TO "FREEWHEEL MODE" OPERATIONS:

STTA2512P

Abstract: STTA5012TV1 STTA5012TV2
Contextual Info: STTA2512P STTA5012TV1/2 TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 25A VRRM 1200V trr (typ) 60ns VF (max) K2 A2 K1 A1 STTA5012TV1 1.9V A2 K1 K2 A1 STTA5012TV2 FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN

Contextual Info: APTDF400AK60G Diode Phase leg Power Module VRRM = 600V IC = 400A @ Tc = 80°C Application K1 • • • • • A1/K2 Anti-Parallel diode Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Features • • • •

APT0502

Abstract: APTDF400AK20G
Contextual Info: APTDF400AK20G Diode Phase leg Power Module VRRM = 200V IC = 400A @ Tc = 80°C Application K1 • • • • • A1/K2 Anti-Parallel diode Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Features • • • •

BAV70

Contextual Info: BAV70 Silicon Switching Diode Array 3
For high-speed switching applications
Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV70 A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage

BAV99

Abstract: free pdf transistor a7s bav99 marking diode bav A2 SOT23
Contextual Info: BAV99 Silicon Switching Diode Array 3
For high-speed switching applications
Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAV99 A7s Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage

Contextual Info: BBY 52-05W Infineon Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipment R Pin Configuration BBY 52-05W S2s upon request 1 = A1 CM II Ordering Code

MARKING 74s

Abstract: PF 7004S
Contextual Info: SIEMENS BAS 70-04S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 • Circuit protection • Voltage clamping • High-level detecting and mixing n y W C 1/A 2 C2 R n fi è 3 2 A1 1 VPS05604 ESD: Electrostatic discharge sensitive device, observe handling precautions!

BBY53

Contextual Info: BBY53 3 Silicon Tuning Diode
High Q hyperabrupt tuning diode
Designed for low tuning voltage operation 2 for VCOs in mobile communications equipment
High ratio at low reverse voltage Type BBY53 Marking S7s 1 Pin Configuration 1 = A1 2 = A2 3 = C1/2