DIODE A1 7 Search Results

Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material

Contextual Info: STPSC12H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC12H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material

Contextual Info: STPSC8H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC8H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

Contextual Info: STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 1 K (2) A2 (3) A2 A1 K TO-220AB STPSC20H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

6A1 diode

Abstract: 7006S VPS05604
Contextual Info: BAS 70-06S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 6 • Circuit protection • Voltage clamping • High-level detecting and mixing 2 A1/A2 C2 C1 6 5 4 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking

EHA07182

Abstract: BAV70S VPS05604 6C12 5a2 DIODE C2A26 marking 5a2
Contextual Info: BAV 70S Silicon Switching Diode Array 4 5 • For high-speed switching applications 6 • Internal galvanic isolated diode arrays in one package • Common cathode 2 3 1 VPS05604 C1/C2 A2 6 5 A1 4 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70S A4s

STTH12012TV1

Abstract: STTH12012TV2 JESD97 STTH12012TV STTH12012
Contextual Info: STTH12012TV Ultrafast recovery - 1200 V diode Main product characteristics IF AV 2 x 60 A VRRM 1200 V Tj 150° C VF (typ) 1.30 V trr (typ) 50 ns K2 A2 A2 K1 K1 A1 K2 A1 STTH12012TV STTH12012TV2 A1 A1 K1 Features and benefits • Ultrafast, soft recovery ■

Pin diode G4S

Abstract: BAR63-04W BAR63-05W BAR63 BAR63-06W VSO05561 diode C2 marking c2 diode diode MARKING A1 marking G5s
Contextual Info: BAR63.W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR63-04W BAR63-05W C1/A2 3 BAR63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181

Contextual Info: BAV 70U Silicon Switching Diode Array 5
For high-speed switching applications 4 6
Internal galvanic isolated diode arrays in one package 3
Common cathode 2 1 C1/C2 A2 A1 6 5 4 VPW09197 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70U A4s Pin Configuration

STPS50u100

Abstract: STPS50U100CT STPS50U100C
Contextual Info: STPS50U100C ULVF power Schottky rectifier Features A1 • ultralow forward voltage drop ■ high current capability ■ high frequency operation K A2 Description A2 A1 K A2 A1 The STPS50U100C is a dual power Schottky diode rectifier, suited for high frequency switch

VSO05561

Contextual Info: BBY 52-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY 52-05W S2s Pin Configuration 1=A1 2=A2

bav99w A7S

Abstract: BAV99W VSO05561
Contextual Info: BAV99W Silicon Switching Diode Array 3
For high-speed switching applications
Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage

Marking a1s

Abstract: BAW56W VSO05561
Contextual Info: BAW56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type BAW56W Marking A1s 1 = C1 Pin Configuration 2 = C2 3 = A1/A2 Package SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage

BAV99T

Abstract: SC75
Contextual Info: BAV99T Silicon Switching Diode 3 • For high-speed switching applications • Connected in series 2 C1/A2 3 1 1 2 A1 C2 VPS05996 EHA07181 Type Marking BAV99T A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SC75 Maximum Ratings Parameter Symbol Diode reverse voltage

SC75

Abstract: BAV70T
Contextual Info: BAV70T Silicon Switching Diode Array 3
For high-speed switching applications
Common cathode 2 C1/C2 3 1 1 2 A1 A2 VPS05996 EHA07179 Type Marking BAV70T A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SC75 Maximum Ratings Parameter Symbol Diode reverse voltage

VSO05561

Contextual Info: BAW 56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type Marking BAW 56W A1s Pin Configuration 1 = C1 2 = C2 Package 3 = A1/A2 SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage

BAW56U

Abstract: SC74
Contextual Info: BAW56U Silicon Switching Diode Array • For high-speed switching applications 5 4 6 • Common anode • Internal galvanic isolated diode arrays 3 in one package A1/A2 C2 C1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW56U A1s Pin Configuration

6A1 diode

Abstract: BAW56S VPS05604
Contextual Info: BAW 56S Silicon Switching Diode Array 4 • For high-speed switching applications 5 6 • Common anode • Internal galvanic isolated diode arrays in one package A1/A2 C2 C1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW 56S A1s

BAV70U

Abstract: SC74 10325v
Contextual Info: BAV70U Silicon Switching Diode Array 5
For high-speed switching applications 4 6
Internal galvanic isolated diode arrays in one package 3
Common cathode 2 1 C1/C2 A2 A1 6 5 4 VPW09197 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV70U A4s Pin Configuration

BAW56S

Abstract: 6A1 diode VPS05604
Contextual Info: BAW56S Silicon Switching Diode Array 4
For high-speed switching applications 5 6
Common anode
Internal galvanic isolated diode arrays in one package A1/A2 C2 C1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW56S A1s Pin Configuration

HFA120EA60

Abstract: HFA120FA60
Contextual Info: PD -2.531 HFA120FA60, HFA120EA60 HEXFRED TM Ultrafast, Soft Recovery Diode VR = 600V VF typ. * = 1.4V IF(AV) = 60A Qrr (typ.) = 270nC IRRM (typ.) = 7.0A trr(typ.) = 65ns di(rec)M/dt (typ.)* = 270A/µs K2 A2 A2 K1 K1 A1 K2 A1 HFA120FA60 HFA120EA60 Features

stth2002ct

Abstract: STTH2002CFP DUAL ULTRAFAST RECTIFIER 10176 STTH2002C STTH2002CR STTH2002CG STTH2002CG-TR STTH2002CF 20a90
Contextual Info: STTH2002C High efficiency ultrafast diode Features A1 • Suited for SMPS K A2 ■ Low losses ■ Low forward and reverse recovery times ■ Low leakage current ■ High junction temperature ■ Insulated package: TO-220FPAB A2 A2 Description K K A1 A1 Dual center tap rectifier suited for switch mode

A1030 transistor

Abstract: Q62702-A1030 marking code a4s
Contextual Info: BAV 70W Silicon Switching Diode Array • For high speed switching applications • Common cathode Type Marking Ordering Code Pin Configuration BAV 70W A4s 1 = A1 Q62702-A1030 2 = A2 Package 3 = C1/C2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage