STPSC16H065C Search Results
STPSC16H065C Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| STPSC16H065CT |
|
Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 650V TO-220AB | Original | 8 |
STPSC16H065C Price and Stock
STMicroelectronics STPSC16H065CTDIODE ARRAY SIC 650V 8A TO-220 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
STPSC16H065CT | Tube |
|
Buy Now | |||||||
|
STPSC16H065CT | 1 |
|
Buy Now | |||||||
|
STPSC16H065CT | 1 |
|
Get Quote | |||||||
|
STPSC16H065CT | 2,259 |
|
Get Quote | |||||||
STPSC16H065C Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material |
Original |
STPSC16H065C O-220AB STPSC16H065CT DocID024810 | |
|
Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material |
Original |
STPSC16H065C O-220AB STPSC16H065CT DocID024810 |