DIODE 8A 400V TO252 Search Results

MUR840

Abstract: ultrafast recovery dual rectifier RHRP8120 RHRU100120 Hyperfast Diode 1200V RURG8060 smps design 32V MUR1520 MUR820 RURD420
Contextual Info: FO-011.2 5/12/00 12:09 PM Page 1 I N T E R S I L C O R P O R AT I O N B U I L D I N G S I L I C O N A D V A N TA G E S F O R T EC H N O LO GY U LT R A F A S T A N D H Y P E R F A S T RECTIFIERS Intersil Corporation provides the silicon advantage in a burgeoning market

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BYC8 DIODE ULTRAFAST, LOW SWITCHING LOSS RECTIFIER DIODE  DESCRIPTION The UTC BYC8 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC8 is generally applied in continuous current

L03N60

Abstract: PG-TO220-3-31 TRANSISTOR SMD MARKING CODE 1v mj 4043 Infineon MOSFET 1000V MS 25231 LAMP RG80 PG-TO-220-3-31 PG-TO25
Contextual Info: ILA03N60, ILP03N60 ILD03N60 ^ LightMOS Power Transistor C • • • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET

Q67040-S4628

Abstract: ic 5304 1a Q67040-S4626 ILA03N60 ILB03N60 ILD03N60 ILP03N60 IC 4043 configuration
Contextual Info: ILA03N60, ILP03N60 ILB03N60, ILD03N60 ^ LightMOS Power Transistor C • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET

RGT8BM65D

Contextual Info: RGT8BM65D Data Sheet 650V 4A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 4A VCE(sat) (Typ.) 1.65V PD 62W TO-252 (2) (1) (3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) Low Switching Loss

g04n60

Contextual Info: SGP04N60 SGD04N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls G - Inverter • NPT-Technology for 600V applications offers:

G04N60

Abstract: SGD04N60 PG-TO-220-3-1 P-TO252-3-11 SGP04N60
Contextual Info: SGP04N60 SGD04N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation C combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls G E - Inverter • NPT-Technology for 600V applications offers:

G04N60

Contextual Info: SGP04N60 SGD04N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation C combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls G E - Inverter • NPT-Technology for 600V applications offers:

ic 0941

Abstract: SGD04N60 P-TO252 SGB04N60 SGP04N60 SGU04N60 DIODE 3A 1000V
Contextual Info: SGP04N60, SGB04N60 SGD04N60, SGU04N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

G04N60

Contextual Info: SGP04N60 SGD04N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls G - Inverter • NPT-Technology for 600V applications offers:

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N40 Preliminary Power MOSFET 8A, 400V N-CHANNEL POWER MOSFET 1 TO-220  DESCRIPTION The UTC 8N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a

diode 8a 400V TO252

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N40 Preliminary Power MOSFET 8A, 400V N-CHANNEL POWER MOSFET 1 TO-220 „ DESCRIPTION The UTC 8N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a

SGU04N60

Contextual Info: SGP04N60, SGB04N60 SGD04N60, SGU04N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

ic 0941

Abstract: SGB04N60 SGD04N60 SGP04N60 SGU04N60 Q67040-S4442
Contextual Info: SGP04N60, SGD04N60, SGB04N60 SGU04N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

Contextual Info: IGBT IKD04N60R Datasheet IndustrialPowerControl IKD04N60R

IKD04N60RA

Contextual Info: IGBT IKD04N60RA Datasheet IndustrialPowerControl IKD04N60RA

AOD9N40

Contextual Info: AOD9N40 400V,8A N-Channel MOSFET General Description Product Summary The AOD9N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC -DC applications.By providing low RDS on , Ciss and Crss along

Contextual Info: AOD9N40 400V,8A N-Channel MOSFET General Description Product Summary The AOD9N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC -DC applications.By providing low RDS on , Ciss and Crss along

Contextual Info: IGBT IKD04N60RF Datasheet IndustrialPowerControl IKD04N60RF TRENCHSTOPTMRC-DrivesFastSeries

FGD2N40

Abstract: FGD2N40L
Contextual Info: FGD2N40L 400V N-Channel Logic Level IGBT Features General Description „ VCE SAT = 1.6V @ IC = 2.5A, VGE = 2.4V This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for small engine ignition applications. The gate is ESD protected with a zener diode.

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

Contextual Info: ILP03N60, ILB03N60 ILD03N60 ^ LightMOS Power Transistor C • • • • New revolutionary high voltage technology designed for ZVSswitching in lamp ballasts IGBT with integrated reverse diode Avalanche rated 150°C operating temperature P-TO-220-3-1 TO-220AB

ILA03N60

Abstract: ILB03N60 ILD03N60 ILP03N60 Q67040-S4626 Q67040-S4628
Contextual Info: ILA03N60, ILP03N60 ILB03N60, ILD03N60 ^ LightMOS Power Transistor C • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET

g10n60

Contextual Info: SGP02N60 SGD02N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: