DIODE 86D Search Results

1N1182

Abstract: diode 1N1188 1N1111 1N1130 1N1119 1N1184 1n1194 1N1118 1N1120 1N1124
Contextual Info: 3869720 G E N E R A L DIODE CORP 86D 00323 GENERAL DIODE CORP flb D T~ DE~ 3fiLT720 □□□□323 1 STUD MOUNTED SILICON POWER RECTIFIERS . . . cont’d i\\ \ l l\1 TYPE \ 1N1118 1N1124 ÍN1124A 400 500 600 200 200 1N1125 1N1125A ' 1N112S 1N1126A 1N1127

EVR20

Abstract: diode 1n4742 Diode DO12 1N47S2 IN4756 IN4748 EVR10 EVR16 EVR30 in4758
Contextual Info: 3869720 GENERAL DIODE C O R P _ GENERAL DIODE CORP 86D 00351 D 7"— / 3 flb _ DE Bflb'íTSO 0DG0351 b 1 WATT SILICON ZENER DIODES . . . cont’d TYPE TYPE 1N3041 1N 3042 1N3043 1N3044 1N304S 00-12 Do-12 Do-12 Do-12 Do-12 75 82 91 100 110

1n15

Abstract: 1n1555 diode 1N1537 c 3150 C3150 1N1539 "general diode corporation" 1N1542 1N1555 1N1438
Contextual Info: 3869720 GENERAL DIODE CORP GENERAL DIODE CORP 86D 00325 flb DE13flbT7H0 0000325 S STUD MOUNTED SILICON POWER RECTIFIERS . . . cont’d TYPE $ DO-4 DO-5 00-5 Do-5 DO-5 vft Do-5 1.2 @ 60 1.2 @ 60 1.2 @ 60 1.2 @ 60 .45 @ 150 5 @150 5 @150 5 @150 5 @150 Do-4 Do-4

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DDB6U75N16YR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values !32C5C36"#$ 6%1C3B132214BBFB &' 6 6*+

"general diode corporation"

Abstract: SVM91 1n4501 SVM9010 1N1734 zener General Diode 1N1732 SV3207 1N1734 PR6210
Contextual Info: 3869720 GENERAL DIODE CORP -Ab 86D 00345 D E | 3 û h c] 7 2 D D 7W/-67 □00D34S ULTRA STABLE CERTIFIED VOLTAGE REFERENCES C ertified for observed voltage stab ility durin g 1000 hours o p eratio n . Each u n it serialized for positive identification,

ic ma 8910

Abstract: K895 K-8901 8930 phototransistor K8901 K8903 K-8945 K-8910
Contextual Info: OPTEK TECHNOLOGY _ 6798580 OPTEK Tb INC TtUHNULÜüY INC » F Ib T T Û S flO 00D 0033 h J ”1 86D 00033 D yy ^ ^ Optically Coupled Isolators The optically coupled isolators contain a gallium arsenide Infrared light emitting diode and a silicon phototransistor. Isolation voltages to 15,000 volts are available.

diode 86D

Contextual Info: "fit DÏf| Ô3bflb02 00053T1 “i 8368602 S O L IT R O N DEVICES INC " |Ti _. . " A in llT r A II ~86D 0 2 3 9 1 d 'T^Í'/? SCHOTTKY RECTIFIERS SSD241 Holitron DEVICES, INC. DUAL POWER SCHOTTKY RECTIFIER COM MON CATHODE 30 A M PER ES (PER DIODE) FEATURES

TM108

Abstract: 1N223B 1N2268 TR301 TM69 1N245S 1N244B TM37 1N2227 1N2225
Contextual Info: 3869720 GENERAL DIODE CORP GE NE R AL DIO DE 86D 00327 D 7- o - r< CORP DE^I 3 0 ^ 7 2 0 0000327 T T STUD MOUNTED SILICON POWER RECTIFIERS . . . cont’d TYPE \ 1N2224A 1N2225 1N2225A 1N222S 1N222BA Do-4 Do-10 . Do-10 Do-4 . DO-4 1000 1000 1000 1200 1200

K8702

Abstract: LF 8731 K872 K8701 K-8711 IC 8713 K-8702 K-8701 K8730 K-8730
Contextual Info: OPTEK TECHNOLOGY 6798580 OPTEK INC TECHNOLOGY ' fib IN C 86D DE | L.7TS5BD 00032 □□□□□35 M D - Reflective Assemblies Optek reflective assemblies consists of a gallium arsenide infrared-emitting diode and a n-p-n silicon phototransistor mounted in a molded plastic housing. When a n object moves in front of the assembly,

ic ma 8910

Abstract: ma 8920 MA 8910 K-8940 K894 386D K8902 K8940 K-8920 K-8930
Contextual Info: OPTEK TECHNOLOGY _ 6796580 OPTEK Tb INC JtU H IN U LU ü Y DE | h 7 T f l 5 f l D INC 86D 00033 h □□□□□33 I ”1 T~ W— &3 Optically Coupled Isolators The optically coupled isolators contain a gallium arsenide Infrared light emitting diode and a silicon

1n45b

Abstract: 1N48 diode T11G T26G IN283 T13G 1N849 DIODE 1N418 IN457A t20g
Contextual Info: 86D 0 0 3 3 5 _ 3 8 6 9 7 2 0 GENERAL DIO D E CORP GENERAL DIODE CORP fit ù 7 D DÎT| 3flfa17BG 0000335 fl J “ GERMANIUM DIODES Case Style — D0-7 TYPE \ \•% % 1N34 1N34A 1N38 1N38 1N3BA 75 75 36 125 125 1.0 1.0 1.0 1.0 1.0 1N38B 1N44 1N45

1n2222 general diode

Abstract: 1N2222 1n22 1N2218 1N2219 0880 1N2024 1N2025 1N2027 1N2029
Contextual Info: 3869720 GENERAL D IO D E CO RP GENERAL DIODE CORP 86D ~ flb 00326 DE | D T - o / ' f f OODDBSb 7 | ~ ST U D M O U N T ED SILICON POW ER RECTIFIERS . . . cont'd 1 % 10 @ 150 10 @ 150 1 @ 150 1 @ 150 1 @ 150 5 @150 5 @150 0.5 @ 150 0.5 @ 150 0.5 @ 150 1 @ 150

MMD0840

Abstract: fs r6a CIRCUIT DIAGRAM IN5711 vishay LIMITING INRUSH CURRENT mosfet LTC6910-1 coiltronics ctx02-13664 MMD-0840 CTX02-13664 LTC3439 mmd series mosfets
Contextual Info: LINEAR TECHNOLOGY VOLUME XII NUMBER 4 DECEMBER 2002 COVER ARTICLE Ideal Diode Controller Eliminates Energy Wasting Diodes in Power OR-ing Applications . 1 David Laude Issue Highlights . 2 LTC in the News . 2

DIODE 1N1343

Abstract: 1N120S "general diode corporation" 1N1201B 1N1202 1N1202A 1N1202B 1N1203 1N1203A 1N1203B
Contextual Info: 3869720 GENE R AL DIODE CO RP ¿Tb 86D 00324 D r-o i'i 7 Ü>iF| 3 0 ^ 7 2 0 □0DD354 3 STUD MOUNTED SILICON POWER RECTIFIERS . . . cont’d TT * TYPE \ 1N1201B 1N1202 1N1202A 1N1202B 1N12Q3 la 1 \ 2$ 1 '53 rn Ö Ö Do-4 Do-4 Do-4 Do-4 Do-4 ISO 200 200 200

DSB015

Abstract: BFl15
Contextual Info: Ordering number : EN1186D D S B4 1 5 N 0. I I 86D Silicon E pitaxial P lan ar Type High-Speed Switching Diode F e a tu re s • Ideally suited for use in hybrid ICs because of small-sized package •F ast sw itching speed A b so lu te M axim um R a tin g s a t Ta = 25°C

1NU7

Abstract: 1N2487 1N1492 1N2508 IN400T 1N1711 equivalent to 1N4001 1N1490 1N2484 1N20B2
Contextual Info: 386 9 7 2 0 GENERAL ~fiï 86D 0 0 3 1 7 DIODE CORP Ï Ë 3öbT?2Q 0D00317 h LE A D M O U N T ED SILICO N POW ER RECTIFIERS P' TYPE y \ % D t -° -a cont'd \ \ r1' | t IH > % 'S 1, •e 25 @ 25 1@ 25 25 @ 25 > 1@ 25 IN 599 1N599A 1N600 1N600A Oo-l Do-1 Oo-l

diode SG22

Abstract: 1N918 1N400 diode 1N5317 1N69B 1N919 1N849 1N673 1N688 1N4141
Contextual Info: 3869720 G E N E R A L D IO D E CORP 86D 0 0 3 3 8 GENERAL DIODE CORP flb T - D E l B û b T O D DD0D33fl 3 1 T àl-à7 SILIC O N D IO D ES . . . cont’d Case Style — DO-7 'il % 9& <h r« yi o ° o TYPE 1N4B2A 1N4S3 1N463A 1N464 1N4B4A Ç90 ïO cl 30 30

P1700-1615

Contextual Info: 6798580 O PTEK TECHNOLOGY OP TE K T E C H N O L O G Y IN C INC 86D 0 0 0 45 D 7 " - Vy— ' 7 3 »FlbTTfiSaO □□□□□45 E |~ SLOTTED OPTICAL SWITCHES PHOTO INTEGRATED CIRCUIT Optek Technology, Ine 345 Industrial Blvd. McKinney, Texas 75069 214 542-9461

l97c

Abstract: kt930 hmc 860 OPTEK kt KT940 KT931
Contextual Info: 6 7 98 5 8 0 OPTEK TECHNOLOGY INC OPTEK TECHNOLOGY INC 86D "âb 0 0 0 45 D *73 Ô F I b T T â S a O □□□□□45 E SLOTTED OPTICAL SWITCHES PHOTO INTEGRATED CIRCUIT Optek Technology, Ine KT930 - KT940 SERIES 345 Industrial Blvd. McKinney, Texas 75069

SPK1300

Abstract: SPK1150 327B4 SPK1350 Solitron SPK1100 Solitron Transistor Solitron Devices
Contextual Info: 8368602 SOLITRON DEVICES INC _ fib 86D 02439 D E jfl3 b flb D 5 n . -rr 3 3 - □ □ 0 5 4 3 c] I i - !" Now There's A Choice! IS O LA T E D A N D G R U 1 D E D D A R U E M iT O If P O V S E R M O D U L E S Paralleled Up To 10,000 Amps DUAL ISOLATED

Contextual Info: N A T IO N A L -CL06IC3- S E H rC OND flb DE jjj b S Q U E E QDSbHfib 7 3 6501122 CO ' CM NATIONAL SEMICONDUCTOR D T r 5 ' / - / <? National Üj rt Semiconductor Corporation £ Q « N CO -I in £ Q 86D 5 6 38 6 DM54LS123/DM74LS123 Dual Retriggerable One-Shot with Clear and Complementary Outputs

tr303

Abstract: TR352 TR602 TR-303 TR403 TR1122 TR302 TR353 TR40t tr501
Contextual Info: 3869720 G E N E R A L D IOD E C O R P "flt ^136^^750 86D 00330 D T'-Of" 0000330 T STUD MOUNTED SILICON POWER RECTIFIERS . . . cont’d 9 - % O- r t % 1%% 20 35 10 20 35 @ @ @ @ @ 150 150 150 150 150 1 .5 1.5 1.5 1.5 1.5 @ @ @ @ @ 50 100 25 50 100 20 @ 1 0 0

K8702

Abstract: k872 8703 K8703 K-8701 K-8702 B
Contextual Info: OPTEK TECHNOLOGY 6798580 OPTEK ÖL INC TECHNOLOGY 86D INC DE | b 7 T Ö S Ö D 00032 □□□□□35 D 4 _ Reflective Assemblies O p te k reflective assem blies consists of a gallium arsenide infrared-emitting d io d e a n d a n-p-n silicon phototransistor m ounted in a m o ld ed plastic housing. W hen a n o b je ct m oves in front of the assembly,

capacitor ls

Contextual Info: /_ NATIONAL SEMICOND {.LOGIC} fit ML DE [ ta501155 DDSt.475 0 6501122 NATIONAL S E M I C O ND U CT OR CM CM CO CM CM CO _l D T'S/V^ 86D 56472 V-W l National fjtirJk Semiconductor Mdm Corporation DM54LS221/DM74LS221 Dual Non-Retriggerable