DIODE 84A Search Results

Contextual Info: APT80F60J 600V, 84A, 0.055Ω Max, trr ≤ 370ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

Contextual Info: APT80F60J 600V, 84A, 0.055Ω Max, trr ≤ 370ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

lt 39 diode smd

Abstract: smd diode 78a IRG4ZH71KD
Contextual Info: PD - 91729 IRG4ZH71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C,

Contextual Info: International IÖR Rectifier PD - 91688 IRG4PSH71 KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins

sc5 s dc 6v relay

Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997

gFE smd diode

Abstract: smd transistor 18E irg4zh70ud SMD-10 PACKAGE diode smd 312
Contextual Info: PD - 9.1627A IRG4ZH70UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features ● ● ● ● ● ● ● UltraFast IGBT optimized for high switching frequencies IGBT co-packaged with HEXFRED ultrafast, ultra-soft recovery antiparallel diodes for use in

Contextual Info: PD - 91688A PRELIMINARY IRG4PSH71KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for

IRG4PSH71KD

Abstract: GE 84A Diode LT 410 diode lt 247
Contextual Info: PD - 91688 PRELIMINARY IRG4PSH71KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for

IRG4PSH71KD

Contextual Info: PD - 91688A PRELIMINARY IRG4PSH71KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for

Contextual Info: Ordering number : ENA1743A SFT1450 N-Channel Power MOSFET http://onsemi.com 40V, 21A, 28mΩ, Single TP/TP-FA Features • • ON-resistance RDS on 1=21mΩ(typ.) Halogen free compliance • • Input Capacitance Ciss=715pF(typ.) Protection diode in 4.5V drive

Class d 1000 WATT

Abstract: MIL-STD-810D st 339 TX1000
Contextual Info: Corporate: www.cdtechno.com TX1000 1000 Watt, Single Output, AC/DC Power Supply Harmonic Correction to EN61000-3-2 z Self-Cooled 5”x 4.88”x 12” Chassis z 70-80% Efficiency z Wide Range Input of 90-264VAC z Optional ORing Diode z FCC / CISPR 22 Class A EMI

Contextual Info: GenX3TM 600V IGBT with Diode IXGK64N60B3D1 IXGX64N60B3D1 VCES IC110 VCE sat tfi(typ) Medium speed low Vsat PT IGBTs 5-40 kHz switching = = ≤£ = 600V 64A 1.8V 88ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

IXGX64N60B3D1

Abstract: PLUS247 123B16
Contextual Info: IXGK64N60B3D1 IXGX64N60B3D1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) Medium speed low Vsat PT IGBTs 5-40 kHz switching = = ≤£ = 600V 64A 1.8V 88ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

uPD3599

Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

lg crt monitor circuit diagram

Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

Contextual Info: PD - 94965B IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description

Contextual Info: PD - 94965B IRF1010EPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description

Contextual Info: PD - 94965A IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description

ssf6008

Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V 3150 mosfet
Contextual Info: SSF6008 Feathers: ID =84A „ Advanced trench process technology BV=60V „ avalanche energy, 100% test Rdson=8mΩ „ Fully characterized avalanche voltage and current Description: The SSF6008 is a new generation of high voltage and low current N–Channel enhancement mode trench power

SSF*6808

Abstract: SSF6808 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
Contextual Info: SSF6808 Feathers: ID =84A „ Advanced trench process technology BV=68V „ avalanche energy, 100% test Rdson=8mΩ（max.） „ Fully characterized avalanche voltage and current Description: The SSF6808 is a new generation of high voltage and low current N–Channel enhancement mode trench power

Contextual Info: PD - 94965 IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description

APT30M36B2FLL

Abstract: APT30M36LFLL
Contextual Info: APT30M36B2FLL APT30M36LFLL 300V POWER MOS 7 R FREDFET FREDFET 84A 0.036Ω B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

*f1010e

Abstract: irf1010e equivalent IRF1010E
Contextual Info: PD - 91670 IRF1010E HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description Advanced HEXFET® Power MOSFETs from International

IRF1010E

Contextual Info: PD - 91670 IRF1010E HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description Advanced HEXFET® Power MOSFETs from International