DIODE 74A Search Results

diode sg 64

Abstract: SG5774AJ SG5772J SG25768 sf 819 d 1N5772 JANTX 1N5768 SG25770J
Contextual Info: , SG5768/68A SG5770/70A, SG5772/72A, SG5774/74A SG25768, SG25770, SG6496/96A DIODE ARRAY CIRCUITS SILICON GENERAL LINEAR IN TEGRATED CIRCUITS DESCRIPTION FEATURES The Silicon General series of diode arrays feature high breakdown, high speed diodes in a variety of configurations.

tms44c256

Abstract: SMALL SIGNAL SCHOTTKY DIODE "Schottky Diode" diode arrays line following CIRCUIT Schottky Diode 74AC11240 SN74S1050 TMS4256
Contextual Info: EB194E Schottky Diode Arrays EB194E SCHOTTKY DIODE ARRAYS Author: Eilhard Haseloff Date: October 10th, 1990 Rev.: A Revised August 30th, 1995 1 Applikationslabor EB194E Schottky Diode Arrays The trend towards faster and faster systems means that the circuit designer has to

Contextual Info: FMJ1A Transistor, digital, PNP, integral diode Features Dimensions Units: mm • available in an SMT5 (FMT, SC-74A) package • package marking: J1 • package includes a digital PN P transistor (DTA144EKA) and a connected diode • same size as SMT3 (SMT, SC-59), so

Diode T148

Abstract: transistor 667 transistor D 667 DTA144EKA T148 marking J1
Contextual Info: FM J 1 A Transistor, digital, PNP, integral diode Features Dimensions U n its: mm • available in an SM T 5 (FMT, SC-74A) package package marking: J1 • package includes a digital PN P transistor (DTA144EKA) and a connected diode • 2.9 ± 0.2 1.9 ± 0.2

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

IRF7353D1

Contextual Info: PD - 91802B IRF7353D1 FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode ● Ideal For Buck Regulator Applications ● N-Channel HEXFET ● Low VF Schottky Rectifier ● Generation 5 Technology ● SO-8 Footprint Description

91802A

Abstract: IRF7353D1
Contextual Info: PD- 91802A IRF7353D1 FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode ● Ideal For Buck Regulator Applications ● N-Channel HEXFET ● Low VF Schottky Rectifier ● Generation 5 Technology ● SO-8 Footprint Description

BC647

Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

77C7

Abstract: 887c 1r12r
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

R222 smd

Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Contextual Info: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP

P65 MOSFET

Abstract: IRF7353D2
Contextual Info: PD- 93809 IRF7353D2 FETKY MOSFET / Schottky Diode ● ● ● ● ● ● Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint

Contextual Info: PD - 95251A IRF7353D1PbF l l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free FETKYä MOSFET / Schottky Diode A

EIA-541

Abstract: IRF7353D1 IRF7807D1 MARKING CODE SO-8
Contextual Info: PD - 91802C IRF7353D1 FETKYä MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l N-Channel HEXFET l Low VF Schottky Rectifier l Generation 5 Technology l SO-8 Footprint Description l A A S

samsung r540

Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Contextual Info: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP

EIA-541

Abstract: IRF7807D1
Contextual Info: PD - 95251A IRF7353D1PbF l l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free FETKYä MOSFET / Schottky Diode A

EIA-541

Abstract: IRF7807D1 IRF7353D2PBF
Contextual Info: PD- 95215A IRF7353D2PbF l l l l l l l Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free FETKYä MOSFET / Schottky Diode

EIA-541

Contextual Info: PD-96073A IRF7353D2UPbF FETKYä MOSFET / Schottky Diode l Co-Pack HEXFET Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l N-Channel HEXFET power MOSFET l Low VF Schottky Rectifier l Generation 5 Technology l SO-8 Footprint l Lead-Free

Contextual Info: PD - 95251 IRF7353D1PbF l l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free FETKYä MOSFET / Schottky Diode A A

Contextual Info: PD- 95215A IRF7353D2PbF l l l l l l l Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free FETKYä MOSFET / Schottky Diode

Contextual Info: PD- 95215 IRF7353D2PbF l l l l l l l Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free FETKYä MOSFET / Schottky Diode

Contextual Info: PD- 93809A IRF7353D2 FETKYä MOSFET / Schottky Diode n n n n n n Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1

EIA-541

Abstract: IRF7353D2 IRF7807D1
Contextual Info: PD- 93809A IRF7353D2 FETKYä MOSFET / Schottky Diode O O O O O O Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1

smd diode marking U1

Abstract: RF 98 marking smd 74ACT540 SWX-01 SWX-02 SWX-03 SWX-04 SWX-05 capacitors smd ghz
Contextual Info: HIGH ISOLATION–SURFACE MOUNT PIN DIODE SWITCHES MODULES SERIES SWX 0.2–2.4GHz FEATURES • Full Cellular Frequency Coverage: 200–2400 MHz (Ideal for PCS Applications) • Thick Film Hybrid Circuitry Sealed in Rugged Ceramic “Surfpac” Packages • Silicon PIN Diode Design is More Robust and ESD Safe than GaAs

SWX-02

Contextual Info: HIGH ISOLATION-SURFACE MOUNT PIN DIODE SWITCHES SWX SERIES 0.2-2.4 GHz FEATURES • Fuil Cellular Frequency Coverage: 200-2400 MHz Ideal for PCS Applications • Thick Film Hybrid Circuitry Sealed in Rugged Ceramic “Surfpac” Packages • Silicon PIN Diode Design is More Robust and ESD Safe than GaAs