DIODE 615 200A Search Results

Contextual Info: APTGU40H60T Full - Bridge PT IGBT Power Module VCES = 600V IC = 40A @ Tc = 80°C Application • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Power MOS 7 Punch Through PT IGBT - Low conduction loss

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N80 Preliminary 6.0 Amps, 800 Volts N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 „ DESCRIPTION The UTC 6N80 is a N-channel mode Power FET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specialized in allowing a

APT40GU60JU2

Contextual Info: APT40GU60JU2 ISOTOP Boost chopper PT IGBT K C E K Benefits • Outstanding performance at high frequency operation · Stable temperature behavior · Very rugged · Direct mounting to heatsink isolated package · Low junction to case thermal resistance C

igbt 400V 40A

Abstract: APT40GU60JU3
Contextual Info: APT40GU60JU3 ISOTOP Buck chopper PT IGBT VCES = 600V IC = 40A @ Tc = 110°C C Application • AC and DC motor control · Switched Mode Power Supplies G E A A E Benefits · Outstanding performance at high frequency operation · Stable temperature behavior

Contextual Info: APTM120DA68T1G VDSS = 1200V RDSon = 680mΩ typ @ Tj = 25°C ID = 15A @ Tc = 25°C Boost chopper MOSFET Power Module 5 6 11 Application • • • CR1 3 4 Q2 NTC Features • 9 10 1 2 AC and DC motor control Switched Mode Power Supplies Power Factor Correction

Contextual Info: APTM120SK68T1G VDSS = 1200V RDSon = 680mΩ typ @ Tj = 25°C ID = 15A @ Tc = 25°C Buck chopper MOSFET Power Module 5 11 6 Application • • Q1 7 AC and DC motor control Switched Mode Power Supplies Features 8 NTC 3 4 • CR2 1 2 • • • 12 Power MOS 8 MOSFETs

APT0406

Abstract: APT0502 APTM120DA68T1G
Contextual Info: APTM120DA68T1G VDSS = 1200V RDSon = 680mΩ typ @ Tj = 25°C ID = 15A @ Tc = 25°C Boost chopper MOSFET Power Module 5 6 11 Application • • • CR1 3 4 Q2 NTC Features • 9 10 1 2 AC and DC motor control Switched Mode Power Supplies Power Factor Correction

APT0406

Abstract: APT0502 APTM120SK68T1G
Contextual Info: APTM120SK68T1G VDSS = 1200V RDSon = 680mΩ typ @ Tj = 25°C ID = 15A @ Tc = 25°C Buck chopper MOSFET Power Module 5 11 6 Application • • Q1 7 AC and DC motor control Switched Mode Power Supplies Features 8 NTC 3 4 • CR2 1 2 • • • 12 Power MOS 8 MOSFETs

ge 142

Abstract: GA100TS60U
Contextual Info: PD -50055C GA100TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

SMD DIODE 615 200A

Abstract: 2N0303 SPB80N03S2-03 SPP80N03S2-03
Contextual Info: SPP80N03S2-03 SPB80N03S2-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 30 RDS on max. SMD version 3.1 m
ID 80 A P-TO263-3-2 Type

Contextual Info: 5 Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 5 Φ SERIES FEATURES — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.

FDA24N50

Abstract: diode marking 226
Contextual Info: UniFET TM FDA24N50 N-Channel MOSFET 500V, 24A, 0.19 Features Description • RDS on = 0.16 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

CR119

Abstract: APTGU40H60T3
Contextual Info: APTGU40H60T3 Full - Bridge PT IGBT Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 13 14 CR3 CR1 19 Q2 22 7 23 8 CR2 26 Q3 11 Features • Power MOS 7 Punch Through PT IGBT

Contextual Info: APTGU40DDA60T3 Dual Boost chopper PT IGBT Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction 13 14 CR2 CR1 22 7 23 8 Q1 4 27 3 30 31 15 32 16 R1 28 27 26 25 16 30 15 31 14 32 13 3 4 7 Benefits

180kd07

Abstract: 471KD07 681KD07 varistor 431kd07 431KD07 820KD07 391kd07 221KD07J
Contextual Info: 7Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 7 Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.

101KD05

Abstract: 431KD05
Contextual Info: 5Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 5 Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.

201KD07

Contextual Info: 7 Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 7 Φ SERIES FEATURES — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.

APT100GN120B2G

Abstract: APT100DQ120 MIC4452
Contextual Info: TYPICAL PERFORMANCE CURVES APT100GN120B2 1200V APT100GN120B2 APT100GN120B2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum

APT100DQ120

Abstract: APT100GN120J MIC4452
Contextual Info: APT100GN120J 1200V TYPICAL PERFORMANCE CURVES APT100GN120J E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and

Contextual Info: TM FQP6N80C/FQPF6N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

471KD20

Abstract: 391KD20 330KD20
Contextual Info: 20Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 20 Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.

471KD14

Abstract: 121KD14
Contextual Info: 14Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 14 Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.

Varistor 201KD20

Abstract: 471KD20J 681KD20
Contextual Info: 20Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 20 Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.

Contextual Info: 14Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 14 Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.