DIODE 5817 SPECIFICATIONS Search Results

Contextual Info: SPD5817 thru SPD5819 SPD5817SMS thru SPD5819SMS SPD5817VSMS thru SPD5819VSMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet 1 AMP

diode 5817 specifications

Abstract: transistor sms SPD5817 SPD5817SMS SPD5817VSMS SPD5818 SPD5819 SPD5819SMS SPD5819VSMS diode 5817
Contextual Info: SPD5817 thru SPD5819 SPD5817SMS thru SPD5819SMS SPD5817VSMS thru SPD5819VSMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet 1 AMP

diode 5817 specifications

Abstract: MIL-STD-750 Method 2076 diode 5819 SPD5817 SPD5817SMS SPD5817VSMS SPD5818 SPD5819 SPD5819SMS SPD5819VSMS
Contextual Info: SPD5817 thru SPD5819 SPD5817SMS thru SPD5819SMS SPD5817VSMS thru SPD5819VSMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet 1 AMP

RS0293

Abstract: RS0293L MIL-STD-750 Method 2076 diode 5817 specifications SPD5817 SPD5817SMS SPD5817VSMS SPD5818 SPD5819 SPD5819SMS
Contextual Info: SPD5817 thru SPD5819 SPD5817SMS thru SPD5819SMS SPD5817VSMS thru SPD5819VSMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet 1 AMP

1N 5819 diode

Contextual Info: 1N5817-1N5819 Vishay Lite-On Power Semiconductor 1 .OA Schottky Barrier Rectifiers Features • S c h o ttk y b a rrie r ch ip • G u a rd ring die c o n s tru c tio n fo r tra n s ie n t p ro te c tio n • H igh s u rg e c a p a b ility • L o w p o w e r loss, hig h e ffic ie n c y

Contextual Info: BAV70WT1G, SBAV70WT1G Dual Switching Diode Common Cathode Features http://onsemi.com • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: M1MA141WAT1G, M1MA142WAT1G, SM1MA142WAT1G Common Anode Silicon Dual Switching Diode http://onsemi.com This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low

Contextual Info: M1MA141WAT1G, M1MA142WAT1G, SM1MA142WAT1G Common Anode Silicon Dual Switching Diode http://onsemi.com This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low

Contextual Info: M1MA141WKT1G, M1MA142WKT1G, SM1MA142WKT1G, Common Cathode Silicon Dual Switching Diode http://onsemi.com This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low

Diode marking CODE 5M SOD

Contextual Info: NSD914XV2T1 High-Speed Switching Diode Features • • • • • High−Speed Switching Applications Lead Finish: 100% Matte Sn Tin Qualified Maximum Reflow Temperature: 260°C Extremely Small SOD−523 Package Pb−Free Package is Available http://onsemi.com

Contextual Info: MMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G Monolithic Dual Switching Diodes http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

SMMBD2835LT1G

Contextual Info: MMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G Monolithic Dual Switching Diodes http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

SMMBD2837LT1G

Abstract: MA6 diode MARKING CODE MA6
Contextual Info: MMBD2837LT1G, MMBD2838LT1G, SMMBD2837LT1G Monolithic Dual Switching Diodes http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−23 TO−236AB

NUP1301ML3T1G

Abstract: SZNUP1301ML3T1G
Contextual Info: NUP1301ML3T1G, SZNUP1301ML3T1G Low Capacitance Diode Array for ESD Protection in a Single Data Line NUP1301ML3T1G is a MicroIntegration device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD electrostatic discharge .

sc-70 a6

Abstract: SBAS16WT1G sbas16wt 0095E-13
Contextual Info: BAS16WT1G, SBAS16WT1G Silicon Switching Diode Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: NSD914XV2T1 High-Speed Switching Diode Features • • • • • High−Speed Switching Applications Lead Finish: 100% Matte Sn Tin Qualified Maximum Reflow Temperature: 260°C Extremely Small SOD−523 Package Pb−Free Package is Available http://onsemi.com

Contextual Info: MBR6045WTG Switch Mode Power Rectifier The Switch Mode power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. Features http://onsemi.com • Dual Diode Construction; Terminals 1 and 3 May Be Connected for • • •

MMDL914T1G

Abstract: Marking code 5d sod323 SMMDL914T1G
Contextual Info: MMDL914T1G, SMMDL914T1G, MMDL914T3G High-Speed Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

BAV70LT1G

Abstract: SBAV70LT3 SBAV70LT1G
Contextual Info: BAV70LT1G, SBAV70LT1G, BAV70LT3G, SBAV70LT3G Dual Switching Diode Common Cathode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  Site and Control Change Requirements

SBAW56LT1G

Abstract: BAW56LT1G
Contextual Info: BAW56LT1G, SBAW56LT1G, BAW56LT3G, SBAW56LT3G, SSV1BAW56LT1G http://onsemi.com Dual Switching Diode Common Anode Features • AEC−Q101 Qualified and PPAP Capable  S & SSV1 Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318

M5C SOT

Abstract: sot-23 diode m5c SMMBD7000LT1G diode M5C MMBD7000LT1G SOT-23 MARKING M5C marking m5c MARKING CODE M5C
Contextual Info: MMBD7000LT1G, SMMBD7000LT1G, MMBD7000LT3G, SMMBD7000LT3G Dual Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−23 TO−236

Contextual Info: BAS21AHT1G Low Leakage Switching Diode Features • NSV Prefix for Automotive and Other Applications Requiring • http://onsemi.com Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

MMSD914T1G

Abstract: SMMSD914T1G
Contextual Info: MMSD914T1G, SMMSD914T1G, MMSD914T3G Switching Diode Features •      http://onsemi.com SOD−123 Surface Mount Package High Breakdown Voltage Fast Speed Switching Time AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique

SBAV99

Abstract: SBAV99LT1G SBAV99LT3G BAV99LT1G
Contextual Info: BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G Dual Series Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements CASE 318