DIODE 50M MARKING CODE Search Results

Diode marking CODE 5M

Abstract: diode 50M marking code LDTBG12GPWT1G transistor collector diode protection RADIO FREQUENCY transistor marking CODE
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPWT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)

Diode marking CODE 5M

Abstract: transistor collector diode protection RADIO FREQUENCY transistor marking CODE LDTDG12GPWT1G LDTDG12GPWT3G diode 50M marking code
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPWT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)

marking jls

Contextual Info: Silicon PIN Diodes BAR 60 BAR 61 • For RF attenuation • Switching applications for frequencies above 10 MHz 3 Type Marking Ordering code tape and reel BAR 60 60 Q 62702 -A 7 8 6 Pin configuration Package SOT-143 io - E X - BAR 61 61 Q 62702- A 1 20 —o1

Contextual Info: SIEMENS Silicon Dual Schottky Diode BAT 15-099 Preliminary Data Features • DBS mixer application to 12 GHz • Low noise figure • Low barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel

marking KN sc70

Abstract: L2SK3018WT1G Diode marking CODE 5M DIODE MARKING code 05M
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon N-channel MOSFET 100 mA, 30 V L2SK3018WT1G 3 • Features 1 Low on-resistance. 2) Fast switching speed. 3) Low voltage drive 2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel.

L2SK3018WT1G

Abstract: l2sk3018
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon N-channel MOSFET 100 mA, 30 V L2SK3018WT1G S-L2SK3018WT1G • Features 1 Low on-resistance. 2) Fast switching speed. 3) Low voltage drive 2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits.

marking DIODE 2U 04

Abstract: DTDG23YP T100 marking 2U diode II1001 Diode marking CODE 5M
Contextual Info: DTDG23YP Transistors Digital transistor built-in resistors and zener diode , driver (60V, 1A) DTDG23YP zFeatures 1) High DC current gain. (Min. 300 at VO/IO=2V/0.5A) 2) Low output voltage. (Typ. 0.4V at IO/II=500/50mA) 3) Built-in zener diode gives strong protection against reverse.

sid9435

Abstract: 9435 mosfet mosfet 9435 to 9435 mosfet 9435 MOSFET code 9435 tr 9435 9435 power marking code 9435 9435 72
Contextual Info: SID9435 -20A, -30V,RDS ON 50m Ω P-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product TO-251 Description 2.3±0.1 6.6±0.2 5.3±0.2 The SID9435 utilized advanced processing techniques to 0.5±0.05 achieve the lowest possible on-resistance, extremely efficient

marking code L17 diode

Abstract: marking l17 transistors l17 DTA144E EML17 RB520G-30 5M MARKING CODE SCHOTTKY DIODE mark l17
Contextual Info: EML17 Transistors General purpose transistor isolated transistor and diode EML17 DTA144E and a RB520G-30 are housed independently in a EMT package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver EML17 1.6 0.5 1.0 0.5 0.5 (5) (4)

Contextual Info: EML17 Transistors General purpose transistor isolated transistor and diode EML17 DTA144E and a RB520G-30 are housed independently in a EMT package. External dimensions (Unit : mm) Applications DC / DC converter Motor driver EML17 1.6 0.5 1.0 0.5 0.5 (5) (4)

Contextual Info: EML17 Transistors General purpose transistor isolated transistor and diode EML17 DTA144E and a RB520G-30 are housed independently in a EMT package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver EML17 1.6 0.5 1.0 0.5 0.5 (5) (4)

RB521S-30

Abstract: DTC123J EML20 Rohm diode 2U
Contextual Info: EML20 Transistors General purpose transistor isolated transistor and diode EML20 DTC123J A and RB521S-30 are housed independently in a EMT6 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver EMT6 1.6 0.5 1.0 0.5 0.5 (6) (5) (4)

TP0610T

Contextual Info: TP0610T inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Product marking for SOT-23: BVDSS / R d S ON I d (ON) b v dgs (m ax) (min) Order Num ber/Package SOT-23 T50* -60V 10£2 -50m A TP0610T where * = 2-w eek alpha date code

Contextual Info: EML20 Transistors General purpose transistor isolated transistor and diode EML20 DTC123J A and RB521S-30 are housed independently in a EMT6 package. External dimensions (Unit : mm) Applications DC / DC converter Motor driver EMT6 1.6 0.5 1.0 0.5 0.5 (6) (5) (4)

Contextual Info: Central" CMPD4150 Semiconductor Corp. SURFACE MOUNT HIGH CURRENT, HIGH SPEED SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD4150 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package,

VPT09050

Contextual Info: SIEMENS SPUX7N60S5 SPDX7N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09050 V P T 0905 1 • Avalanche rated • dv/dt rated • 150°C operating temperature Type SPUX7N60S5 ^bs 600 V 0.8 A

03N60S5

Contextual Info: SIEMENS SPU03N60S5 SPD03N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity

02N60S5

Abstract: SMD TRANSISTOR MARKING 02N SPD02N60S5
Contextual Info: SIEMENS SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity

Contextual Info: SIEMENS BSP 752 T Target data sheet Smart Power High-Side-Switch Features Product Summary • Overload protection Overvoltage protection H b AZ) 60 V • Current limitation Operating voltage H)b(on) co LO V • Short circuit protection On-state resistance

LF MARKING CODE

Contextual Info: Central CMPD1001 CMPD1001A CMPD1001S TM Sem i c o n d u c t o r C o r p . HIGH CURRENT SW ITCHING DIODE DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring

Contextual Info: SIEMENS SPHX0N60S5 Target data sheet Cool MOS Power Transistor • Worldwide bestfibs on in TO 218 • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • dv/dt rated 1 2 3 • 150°C operating temperature G D S Type SPHX0N60S5

Contextual Info: SD107WS SCHOTTKY BARRIER SWITCHING DIODE Features Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance -d -H SOD-323 U —= Mechanical Data_ A B G Case: SOD-323, Plastic

DR marking

Abstract: 2SD1866 2SD2143 2SD2212 T100
Contextual Info: 2SD2212 / 2SD2143 / 2SD1866 Transistors Medium Power Transistor Motor, Relay drive (60±10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 zExternal dimensions (Unit : mm) 2SD2212 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) Built-in zener diode between collector and base.

Contextual Info: Central CLL4150 Sem icon du ctor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL4150 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in a hermetically sealed glass surface mount package, designed for high speed