DIODE 1N5711 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode 1N5711W SCHOTTKY DIODE SOD-123 Features 1.05 • · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode 1N5711WS SCHOTTKY DIODE SOD-323 Features 1.00 1.70 Marking: 1N5711WS:SA 0.30 • · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time

marking A2 diode SOD 123

Abstract: sod123 diode marking e1 sod123 diode marking A2 diode marking A2 sod123 1N5711W SOD123 Package diode e1 marking L1 sod123
Contextual Info: SOD-123 Plastic-Encapsulate Diode 1N5711W SCHOTTKY DIODE SOD-123 Features 1.05 • · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion

1N5711WS

Contextual Info: SOD-323 Plastic-Encapsulate Diode 1N5711WS SCHOTTKY DIODE SOD-323 Features 1.00 1.70 Marking: 1N5711WS:SA 0.30 • · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for

1N5711UB

Contextual Info: 1N5711UB and 1N5712UB CC, CA, & D Qualified Levels: JAN, JANTX, JANTXV and JANS Schottky Barrier Diode Ceramic Surface Mount Compliant Qualified per MIL-PRF-19500/444 DESCRIPTION This 1N5711UB and 1N5712UB Schottky barrier diode is ceramic encased and offers military

Contextual Info: Schottky Diodes 1N5711 Series DESCRIPTION The 1N5711 is a Schottky diode designed with a metalized guard ring to achieve a high voltage breakdown. Features • RoHS Compliant • High voltage breakdown • UHF/VHF detection/pulse applications • Diode matching available

1N5711

Contextual Info: 1N5711 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. Matched batches are available on request

1N5711

Abstract: UHF DO-35
Contextual Info: 1N5711 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. Matched batches are available on request

Contextual Info: 1N5711 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high break­ down, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. Matched batches are available on request.

Contextual Info: 1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1; DSB2810 and DSB5712 Qualified Levels: JAN, JANTX, and JANTXV Schottky Barrier Diode Available on commercial versions Qualified per MIL-PRF-19500/444 DESCRIPTION This Schottky barrier diode is metallurgically bonded and offers military grade qualifications

1N5711UB

Contextual Info: 1N5711UR-1, 1N5712UR-1, 1N6857UR-1, and 1N6858UR-1 plus CDLL equivalents Qualified Levels: JAN, JANTX, and JANTXV Schottky Barrier Diode MELF Surface Mount Available on commercial versions Qualified per MIL-PRF-19500/444 DESCRIPTION This Schottky barrier diode is metallurgically bonded and offers military grade qualifications

1N5711

Contextual Info: 1N5711 asii SCHOTTKY BARRIER DIODE DESCRIPTION: PACKAGE STYLE DO-35 The 1N5711 is a Silicon Small Signal Schottky Diode for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. MAXIMUM RATINGS If 15 mA Vr 70 V Pd i s s 250 mW @ Ta = 25 0C

Contextual Info: 1N5711 asi SCHOTTKY BARRIER DIODE DESCRIPTION: The 1N5711 is a Silicon Small Signal Schottky Diode for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. MAXIMUM RATINGS If 15 mA Vr 70 V P diss 250 mW @ Ta = 25 °C Tj -65 °C to +200 °C

bc 7-25 pnp

Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Contextual Info: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K

5082-2804

Abstract: 5082-2805 1N5712 5082-2080 2800-Series 5082-2826 5082-XXXX 5082-2811 1N5711 RS-296-D
Contextual Info: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 5082-2835 5082-2835 General purpose Schottky diode All Detail Documents Description Lifecycle status: Active Features The 5082-2835 is a passivated Schottky diode in a low cost glass package. It is optimised for

2N2369 avalanche

Abstract: 2N2369 transistor pulse generator 2N2369 AVALANCHE PULSE GENERATOR Tektronix P6056 2N2501 MOTOROLA P-6056 CTX-02-16004 motorola transistor handbook 2N3866 application note crystal generator 1GHz
Contextual Info: Application Note 122 January 2009 Diode Turn-On Time Induced Failures in Switching Regulators Never Has so Much Trouble Been Had By so Many with so Few Terminals Jim Williams David Beebe Introduction A potential difficulty due to diode turn-on time is that

A2 zener diode

Abstract: diode ZENER A1 to-226aa to226aa ZENER DIODE 1n5240 DIODE 827 ZENER 1N5242 1N414* zener 2n2222 transistor pin b c e ZENER 1n5232
Contextual Info: DISCRETE SEMICONDUCTORS I N D E X A N D C R O S S REFERENCE Industry Number Type Allegro Number s Allegro Package TO-236AB TO-236AB TO-236AB 1N914 Diode TMPD914 1N4148 1N5230 1N5231 1N5232 Diode Zener Zener Zener TMPD4148 TMPZ5230 TMPZ5231 TMPZ5232 1N5234

Contextual Info: NOIlVWaOdNI 30NVAQV 1N5711WS SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion He h □

1n5711w-7-f

Abstract: 1N5711W
Contextual Info: 1N5711W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • • • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes 1N5711WS SOD-323 SWITCHING DIODE FEATURES  Low Forward Voltage Drop  Guard Ring Construction for Transient Protection  Fast Switching Speed  Low Capacitance 

1N5711WS

Abstract: 1N5711WS-7 J-STD-020A
Contextual Info: 1N5711WS SURFACE MOUNT SCHOTTKY BARRIER DIODE SPICE MODEL: 1N5711WS Features • · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Speed Low Capacitance Surface Mount Package Ideally Suited for Automatic Insertion

Contextual Info: 1N5711W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection • • • Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion SOD-123

Contextual Info: 1N5711 SCHOTTKY BARRIER SWITCHING DIODE Features_ • • • • Ultra-Fast Switching Speed High Reverse Breakdown Voltage Low Forward Voltage Drop Guard Ring Junction Protection I T D Mechanical Data_ • • • • • DO-35

marking SA

Contextual Info: ADVANCE INFORMATION 1N5711WS SURFACE MOUNT SCHOTTKY BARRIER DIODE POWER SEMICONDUCTOR Features • • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for