DIODE 1200V 40A Search Results

Contextual Info: V23990-P629-L99-PM datasheet flow BOOST 0 1200V/40A Features flow 0 17mm housing ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode ● Antiparallel IGBT protection diode with high current Target Applications ● solar inverter

Contextual Info: V23990-P629-L59-PM preliminary datasheet flowBOOST 1200V/40A Features flow0 17mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V Si diode Target Applications Schematic ● solar inverter

Contextual Info: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXYH40N120B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR

Contextual Info: APT40GR120B2DU30 APT40GR120B2DU30 1200V, 40A, VCE on = 2.5V Typical Ultra Fast NPT - IGBT with Ultra Soft Recovery Diode The Ultra Fast 1200V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between

Contextual Info: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) IXYH40N120C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

QR30

Contextual Info: Advance Technical Information IXYH40N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

Contextual Info: Advance Technical Information IXYH40N120B3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.7V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

Contextual Info: 1200V 40A APT40DQ120B APT40DQ120S APT40DQ120BG* APT40DQ120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE TO PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply

power Diode 800V 20A

Contextual Info: 1200V 40A APT40DQ120B APT40DQ120S APT40DQ120BG* APT40DQ120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE TO PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply

Contextual Info: Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYJ20N120C3D1 (Electrically Isolated Tab) = = ≤ = 1200V 7A 4.0V 108ns High-Speed IGBT for 20-50 kHz Switching ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings

2x40A

Contextual Info: 1200V 2x40A APT40DQ120BCT APT40DQ120BCTG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE TO PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode

power Diode 800V 20A

Abstract: apt10035
Contextual Info: 1200V 2x40A APT40DQ120BCT APT40DQ120BCTG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE TO PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode

Contextual Info: Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYH20N120C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 17A 4.0V 108ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

ixgn50n120c3h1

Abstract: g50n IF110 g50n120c3
Contextual Info: Advance Technical Information IXGN50N120C3H1 GenX3TM 1200V IGBT w/ Diode VCES IC110 VCE sat = 1200V = 50A ≤£ 4.2V High-Speed PT IGBT for 20-50 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200

Contextual Info: Advance Technical Information GenX3TM 1200V IGBT w/ Diode IXGN82N120B3H1 VCES IC110 VCE sat = 1200V = 64A ≤£ 3.2V High-Speed Low-Vsat PT IGBT for 3-20 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

IXYH50N120C3D1

Contextual Info: Advance Technical Information IXYH50N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 50A 3.0V 57ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

Contextual Info: APT40DC120HJ ISOTOP SiC Diode Full Bridge Power Module VRRM = 1200V IC = 40A @ Tc = 100°C Application •    Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features     + ~ SiC Schottky Diode

Contextual Info: IXYB82N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 82A 3.2V 93ns PLUS264TM Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

IXYB82N120

Abstract: 82N120C3 IXYB82N120C3H1
Contextual Info: IXYB82N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 82A 3.2V 93ns PLUS264TM Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

DSDS4625-4

Abstract: MF35 MF35-1200R
Contextual Info: MF35 MF35 Fast Recovery Diode Replaces March 1998 version, DS4625-3.1 DSDS4625-4.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 1200V IF AV 40A IFSM 400A Qr 10µC trr 0.2ns • Inverse, Parallel Or Series Connected Diode ■ Power Supplies ■ High Frequency Applications

C67047-A2252-A2

Contextual Info: BYP 302 FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics Type VRRM IFRMS trr Package Ordering Code BYP 302 1200V 40A 130ns TO-218 AD C67047-A2252-A2 Maximum Ratings Parameter Symbol Mean forward current IFAV TC = 90 °C, D = 0.5

IRGPS40B120UD

Abstract: ic MARKING QG IRFPS37N50A 1000V 20A transistor
Contextual Info: PD- 94240A IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

800v irf

Abstract: IGBT 900V 80A ir igbt 1200V 40A IRF 725 IRGP8B120KD-E 40A vp
Contextual Info: PD - 94386A IRGP8B120KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

420 Diode

Abstract: ir igbt 1200V 40A IRGPS40B120UD TRANSISTOR N 1380 600 300 SC igbt 40A 600V 3IRGPS40B120UD
Contextual Info: PD- 94240 IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.