DIODE 10 16V Search Results

R222 smd

Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Contextual Info: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP

MAX5968

Abstract: 12VSB cb amplifier
Contextual Info: 19-5115; Rev 1; 2/10 Circuit-Breaker and Ideal Diode Controller with Digital Monitoring Functions The MAX5968 soft-switch and ideal diode controller protects systems with redundant DC-DC converter modules against failure of the converter by controlling external

BC647

Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

77C7

Abstract: 887c 1r12r
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

samsung r540

Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Contextual Info: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP

Hitachi DSA002759

Contextual Info: 2SK3082 L ,2SK3082(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 10 A 40 A 10 A 10 A 8.5 mJ 30 W Drain peak current I D(pulse) Note1 Body-drain diode reverse drain current I DR

22 16v diode

Abstract: DIODE 10 16V
Contextual Info: T-10 WEDGE BASED LED LAMP PRELIMINARY SPEC Part Number: BLW102PBC-Z-16V-T10 Features Description z z z BLUE BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT The Blue source color devices are made with InGaN Light APPLICATION OF DIFFERENT ACROSS CURRENT. Emitting Diode.

Contextual Info: T-10 WEDGE BASED LED LAMP PRELIMINARY SPEC Part Number: BLW102VGC-E-16V-T10 Features Description z z z GREEN BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT The Green source color devices are made with InGaN on APPLICATION OF DIFFERENT ACROSS CURRENT. SiC Light Emitting Diode.

Si4340DDY

Contextual Info: Si4340DDY Vishay Siliconix Dual N-Channel 20 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () 0.0085 at VGS = 10 V 0.0115 at VGS = 4.5 V 0.0070 at VGS = 10 V 0.0095 at VGS = 4.5 V ID (A)a 14.8 12.8

Si4340DDY

Contextual Info: Si4340DDY Vishay Siliconix Dual N-Channel 20 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () 0.0085 at VGS = 10 V 0.0115 at VGS = 4.5 V 0.0070 at VGS = 10 V 0.0095 at VGS = 4.5 V ID (A)a 14.8 12.8

Si4340DDY

Contextual Info: Si4340DDY Vishay Siliconix Dual N-Channel 20 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () 0.0085 at VGS = 10 V 0.0115 at VGS = 4.5 V 0.0070 at VGS = 10 V 0.0095 at VGS = 4.5 V ID (A)a 14.8 12.8

Contextual Info: IKW25N120T2 TrenchStop 2 nd generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel Emitter Controlled Diode C •  Short circuit withstand time – 10s Designed for : - Frequency Converters

SKP10N60A

Abstract: SKB10N60A SKW10N60A Q67040-S4459 Q67040-S4458 fast recovery diode 1000v 10A 100w 5a IGBT
Contextual Info: SKP10N60A, SKB10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:

SKB10N60

Abstract: SKP10N60 Q67040-S4217 7A, 100v fast recovery diode SKW10N60
Contextual Info: SKP10N60 SKB10N60, SKW10N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:

SKP15N60

Abstract: SKB15N60 SKW15N60
Contextual Info: SKP15N60 SKB15N60, SKW15N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:

SKW20N60

Abstract: Q67040-S4242
Contextual Info: SKW20N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

k02n120

Abstract: 15v 60w smps smps 10w 5V PG-TO-220-3-1 SKP02N120 fast recovery diode 2a trr 200ns
Contextual Info: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs

k20n60

Abstract: SKW20N60 100w 24v 5a IGBT igbt 400V 20A PG-TO-247-3 IGBT 100W 24V 5A
Contextual Info: SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

Contextual Info: SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter

SKW20N60

Contextual Info: SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter

K02N120

Abstract: fast recovery diode 2a trr 200ns
Contextual Info: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs

K15N60

Contextual Info: SKB15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

240NC

Abstract: K04N60
Contextual Info: SKP04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

k25t1202

Abstract: K25t1202 IGBT k25t120 IKW25N120T2 fast recovery diode 600v 1200A 5n fast recovery diodes
Contextual Info: TrenchStop 2 nd IKW25N120T2 generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel EmCon diode C • • Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply