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    K20N60 Search Results

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    K20N60 Price and Stock

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    Alpha & Omega Semiconductor AOK20N60L

    MOSFET N-CH 600V 20A TO247
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    DigiKey AOK20N60L Tube 79 1
    • 1 $5.22
    • 10 $5.22
    • 100 $2.93
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    Toshiba America Electronic Components TK20N60W5,S1VF

    MOSFET N-CH 600V 20A TO247
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    DigiKey TK20N60W5,S1VF Tube 23 1
    • 1 $5.18
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    • 100 $3.01
    • 1000 $2.21
    • 10000 $2.19
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    Avnet Americas TK20N60W5,S1VF Tube 16 Weeks 30
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    • 100 $3.09
    • 1000 $2.19
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    Mouser Electronics TK20N60W5,S1VF 90
    • 1 $5.08
    • 10 $3.43
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    Toshiba America Electronic Components TK20N60W,S1VF

    MOSFET N-CH 600V 20A TO247
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    DigiKey TK20N60W,S1VF Tube 1 1
    • 1 $7.56
    • 10 $7.56
    • 100 $4.68
    • 1000 $3.59
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    Avnet Americas TK20N60W,S1VF Tube 16 Weeks 30
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    Mouser Electronics TK20N60W,S1VF 43
    • 1 $7.54
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    • 100 $4.69
    • 1000 $3.59
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    Toshiba America Electronic Components TK20N60W5,S1VF(S

    Mosfet, N-Ch, 600V, 20A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Toshiba TK20N60W5,S1VF(S
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    Newark TK20N60W5,S1VF(S Bulk 275 1
    • 1 $4.53
    • 10 $4.05
    • 100 $3.50
    • 1000 $2.75
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    EBV Elektronik TK20N60W5,S1VF(S 30 23 Weeks 30
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    Toshiba America Electronic Components TK20N60W,S1VF(S

    Mosfet, N-Ch, 600V, 20A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.7V Rohs Compliant: Yes |Toshiba TK20N60W, S1VF(S
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    Newark TK20N60W,S1VF(S Bulk 1
    • 1 $4.29
    • 10 $3.83
    • 100 $3.31
    • 1000 $2.60
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    TME TK20N60W,S1VF(S 1
    • 1 $6.03
    • 10 $3.85
    • 100 $3.56
    • 1000 $3.14
    • 10000 $3.14
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    EBV Elektronik TK20N60W,S1VF(S 300 23 Weeks 30
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    New Advantage Corporation TK20N60W,S1VF(S 240 1
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    • 100 $7.80
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    K20N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    k20N60hs

    Abstract: k20n60
    Contextual Info: SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    SKW20N60HS PG-TO-247-3-21 SKW20N60HS k20N60hs k20n60 PDF

    k20n60

    Contextual Info: SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original
    SKW20N60 SKW20N60 k20n60 PDF

    k20n60

    Abstract: SKW20N60 100w 24v 5a IGBT igbt 400V 20A PG-TO-247-3 IGBT 100W 24V 5A
    Contextual Info: SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original
    SKW20N60 PG-TO-247-3 k20n60 SKW20N60 100w 24v 5a IGBT igbt 400V 20A PG-TO-247-3 IGBT 100W 24V 5A PDF

    k20n60

    Abstract: k20N60hs RY 227 Tf 227 10A PG-TO-247-3 igbt 400V 20A SKW20N60HS
    Contextual Info: SKW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    SKW20N60HS PG-TO-247-3 K20N60HS k20n60 k20N60hs RY 227 Tf 227 10A PG-TO-247-3 igbt 400V 20A SKW20N60HS PDF

    k20N60hs

    Abstract: K20N60 power Diode 400V 20A
    Contextual Info: SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    SKW20N60HS PG-TO-247-3-21 SKW20N60HS k20N60hs K20N60 power Diode 400V 20A PDF

    Contextual Info: SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for: - Motor controls


    Original
    SKW20N60 PDF

    k20n60

    Abstract: SKW20N60
    Contextual Info: SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original
    SKW20N60 SKW20N60 k20n60 PDF

    k20n60

    Abstract: igbt 400V 20A
    Contextual Info: SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original
    SKW20N60 SKW20N60 k20n60 igbt 400V 20A PDF

    k20N60hs

    Abstract: k20n60
    Contextual Info: SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    SKW20N60HS PG-TO-247-3-1 Q67040-S4502 PG-TO-247-3-1 O-247AC) SKW20N60HS k20N60hs k20n60 PDF

    k20N60hs

    Abstract: k20n60
    Contextual Info: SKW20N60HS Preliminary ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    SKW20N60HS PG-TO-247-3-1 Q67040-S4502 PG-TO-247-3-1 O-247AC) SKW20N60HS k20N60hs k20n60 PDF