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    K20N60 Search Results

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    K20N60 Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components TK20N60W,S1VF

    - Rail/Tube (Alt: TK20N60W,S1VF)
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    Toshiba America Electronic Components TK20N60W5,S1VF

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    Toshiba America Electronic Components TK20N60W5,S1VF(S

    Mosfet, N-Ch, 600V, 20A, To-247; |Toshiba TK20N60W5,S1VF(S
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    Toshiba America Electronic Components TK20N60W,S1VF(S

    Mosfet, N-Ch, 600V, 20A, To-247; |Toshiba TK20N60W, S1VF(S
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    Newark TK20N60W,S1VF(S Bulk 1
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    TME TK20N60W,S1VF(S 1
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    EBV Elektronik TK20N60W,S1VF(S 210 23 Weeks 30
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    Toshiba America Electronic Components TK20N60W

    Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-247
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    Bristol Electronics TK20N60W 9 1
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    K20N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    k20N60hs

    Abstract: k20n60
    Contextual Info: SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    skw20n60hspg-to-247-3-21k20n60hsk20n60 PDF

    k20n60

    Contextual Info: SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original
    skw20n60k20n60 PDF

    k20n60

    Abstract: SKW20N60 100w 24v 5a IGBT igbt 400V 20A PG-TO-247-3 IGBT 100W 24V 5A
    Contextual Info: SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original
    skw20n60pg-to-247-3k20n60100w 24v 5a igbt+2igbt 400v 20aigbt 100w 24v 5a PDF

    k20n60

    Abstract: k20N60hs RY 227 Tf 227 10A PG-TO-247-3 igbt 400V 20A SKW20N60HS
    Contextual Info: SKW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    skw20n60hspg-to-247-3k20n60hsk20n60+2ry 227 tf 227 10aigbt 400v 20a PDF

    k20N60hs

    Abstract: K20N60 power Diode 400V 20A
    Contextual Info: SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    skw20n60hspg-to-247-3-21k20n60hsk20n60+1power diode 400v 20a PDF

    Contextual Info: SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for: - Motor controls


    Original
    skw20n60 PDF

    k20n60

    Abstract: SKW20N60
    Contextual Info: SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original
    skw20n60k20n60 PDF

    k20n60

    Abstract: igbt 400V 20A
    Contextual Info: SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original
    skw20n60k20n60igbt 400v 20a PDF

    k20N60hs

    Abstract: k20n60
    Contextual Info: SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    skw20n60hspg-to-247-3-1q67040-s4502o-247ac+2k20n60hsk20n60 PDF

    k20N60hs

    Abstract: k20n60
    Contextual Info: SKW20N60HS Preliminary ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    skw20n60hspg-to-247-3-1q67040-s4502o-247ac+2k20n60hsk20n60 PDF