DIODE 07C Search Results

BTS423

Abstract: DTS413 dts430
Contextual Info: 3 8 6 9 7 2 0 GENERAL DIODE CORP 07C 0 0 2 5 9 ' GENERAL DIODE CORP ^ 07 D T ~ -3 3 - 0 / DE | 3flbT7SD G D O O S S T 7 d Æ s-m taondiLctons. 100 Eames Street Framingham, Massachusetts 01701

diode 07C

Contextual Info: SUM60N08-07C New Product Vishay Siliconix N-Channel 75-V D-S MOSFET with Current Sensing Diode FEATURES D TrenchFETr Power MOSFET Plus Current Sensing Diode D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V

Contextual Info: _ 3B69720 GENERAL DIODE CORP _ 07C00256 D -r . y t GENERAL DIODE CORP □? D E ^ 3 0 ^ 7 2 0 000055b 1 | SILICON PNP - Power Transistors TYPE MO. MAX. COLL. H MAX. EHSS. A THERMAL X. M RES. Fim iM Ctm i T A» te C m #25* C E M rtyw

MD14

Abstract: TRM6014 TRM6505 TRL2005 TRM5014S TRM5504 TRM6504 TRM7014 TRM8014 TRW201
Contextual Info: 3869720 GENERAL DIODE CORP '_ 07C 0 0 2 5 3_ D GENERAL DIODE CORP 07 DE |3ÛL.ci720 0000E53 b SILICON N P N -P o w e r Transistors TYPE NO. MAX. THERMAL RES. Junction lo Case 9,« MAX. COLL. DISS. in Fiee All 0 2 5 'C Pe ABSOLUTE MAX. RATINGS $ 2 5 'C.

TRS-4405S

Abstract: MD14 TRS-3605S TRS-4015S TRS-4805S TRS-5205S TRS-5405S IMD14 480 to-5
Contextual Info: 386972a GENERAL DIODE CDRP_ 07C 00252 D T-33-o GENERAL DIODE CORP ~ 0? D E | 3 f i b T ? S D 0 D Q 0 E S a 4 | SILICON NPN-Power Transistors TYPE NO. MAX. THERMAL RES. Junction to C u e * * re/ *) TRS-3M5S 17.5 MAX. ABSOLUTE MAX. RATINGS £ 2 5 ' C.

TRS601

Contextual Info: 3869720 GENERAL DIODE CORF ¿3 GTS C 07C 00250 D 7- 33 -^/ _ mLaondacto%± GENERAL DIODE CORP ~ 07 DE | 3öb17aD DDDOaSD 0 100 Ea m e s Stre e t < 6 1 7 J Ï7 2 -7 5 2 0 F r a m in g h a m , M a ss a c h u se t ts 0 1 7 0 1 SILICON NPN - Power Transistors

C0034

Abstract: 0C70 APS1000 u0440 K045
Contextual Info: APS1000 SERIES SURFACE MOUNT SILICON PIN SWITCHING DIODE DESCRIPTION: PACKAGE STYLE SOT-23 SILICON PIN SWITCHING DIODE IN A SOT-23 PACKAGE MILUMETERS DIM A Absolute Maximum Ratings 1 V P.D. 100MA AS SHOWN 250mW @ TC=25°C MIN 28C MAX 3.04 INCHES MIN 01102

T1IS

Abstract: 60 amp 600 Volt Diode 2S05 Diode TRS3015 MD14 TRS-3204S TRS-3604S TRS-4014S TRS-4404S TRS-5204S
Contextual Info: 3869720 GENERAL'DIODE CORP GENERAL DIODE CORP 07C 00251 D -7”- 3 3 t£ / Dif| 3 0 ^ 7 8 0 DD0D551 5 07 SILICON NPN* Power Transistors TYPE NO. TRS-3204S tc MAX. COLL. OISS. HI Fit« Ah #25*C P« rc/D M U ) MAX. THERMAL RES. Janetion lo C t u I7.S ABSOLUT :MAX. RATINGS #2S* C.

5SDF11H4505

Abstract: Abb diode 6000 A high power igct abb FR 306 Diode
Contextual Info: PRELIMINARY 5SDF 11H4505 5SDF 11H4505 Old part no. DC 889-1100-45 Fast Recovery Diode Properties Optimized soft recovery characteristics Enhanced Safe Operating Area Industry standard housing Cosmic radiation withstand rating Applications Key Parameters V RRM

H11L2

Abstract: H11L H11L3 25CC H11L1 st2015
Contextual Info: MICROPROCESSOR COMPATIBLE GaAs SCHMITT TRIGGER OPTOCOUPLERS OPTOELEETBOHlCS H11L1 H11L2 H11L3 PACKAGE DIMENSIONS DESCRIPTION The H11L series has a medium-to-hlgh speed integrated circuit detector optically coupled to a gallium-arsenide infrared emitting diode. The output incorporates a

2N3743

Abstract: 2N4930 2N4931 2N5096 2N5282
Contextual Info: 3869720 G EN ER A L ' O I D D E CORP 07C 0 02 54 GENERAL DIODE CORP 07 D -p-33 - DE | 301^750 DDODSSM Ö | ~ SILICON N P N - Power Transistors rvP E i, M AX . TH ER M AL ;s Junction lo Cáse M AX. C O LL. DI SS. t< net A li 925* C A B S O L U T E M A X . R A T IN G S { » ' C .

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

SUM60N08-07C

Abstract: S-03076
Contextual Info: SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Sense Terminal FEATURES D TrenchFETr Power MOSFET Plus Current Sense D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V 60a APPLICATIONS

SUM60N08-07C

Abstract: Active resistance mosfet current mirror
Contextual Info: SUM60N08-07C New Product Vishay Siliconix N-Channel 75-V D-S MOSFET with Sense Terminal FEATURES D TrenchFETr Power MOSFET Plus Current Sense D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V 60a APPLICATIONS

Contextual Info: SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Sense Terminal FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 75 0.007 at VGS = 10 V 60a • TrenchFET Power MOSFET Plus Current Sense • Low Thermal Resistance Package Available

Contextual Info: SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Sense Terminal FEATURES D TrenchFETr Power MOSFET Plus Current Sense D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V 60a APPLICATIONS

SUM60N08-07C

Contextual Info: SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Sense Terminal FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 75 0.007 at VGS = 10 V 60a • TrenchFET Power MOSFET Plus Current Sense • Low Thermal Resistance Package Available

Contextual Info: SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Sense Terminal FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 75 0.007 at VGS = 10 V 60a • TrenchFET Power MOSFET Plus Current Sense • Low Thermal Resistance Package Available

Contextual Info: SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Sense Terminal FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 75 0.007 at VGS = 10 V 60a • TrenchFET Power MOSFET Plus Current Sense • Low Thermal Resistance Package Available

SUM60N08-07C

Abstract: n-channel, 75v, 60a
Contextual Info: SPICE Device Model SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Sense Terminal CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUM60N08-07C SPICE Device Model

Abstract: SUM60N08-07C
Contextual Info: SPICE Device Model SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Current Sense Terminal CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUM60N08-07C

Abstract: SUM60N08-07C SPICE Device Model
Contextual Info: SPICE Device Model SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Current Sense Terminal CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Transistor AND DIODE Equivalent list

Abstract: Transistor Equivalent list 8ch pnp DARLINGTON TRANSISTOR ARRAY pnp Octal Darlington Transistor Arrays equivalent transistor 2sk 2SK1078 TD62783 equivalent TD62783 TD62504 equivalent pnp DARLINGTON TRANSISTOR ARRAY
Contextual Info: [ 2 ] Product List [ 2 ] Product List 1. S-Drivers new product (9 series, 9 devices) TD62 S X X X A FM Package Output withstand voltage (A: 50 V) Input H/L (odd number: Low) Output current (0.5 A/0.1 A) 0: Sink current output 3: Source current output 6: Push-pull output

Contextual Info: P D - 9 .1 6 1 0 A International IO R Rectifier IRFR/U5505 PRELIMINARY HEXFET Power MOSFET • Ultra Low On-Resistance • P-Channel • Surface Mount IRFR5505 • Straight Lead (IRFU5505) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated