DIODE 0317 Search Results

Contextual Info: DSA 30 I 100PA advanced V RRM = I FAV = VF = Schottky High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 100 V 30 A 0.78 V Part number DSA 30 I 100PA Backside: cathode Features / Advantages: Applications: Package: ● Very low Vf ● Extremely low switching losses

42N50

Abstract: 42N50P2
Contextual Info: Advance Technical Information IXFH42N50P2 IXFT42N50P2 PolarP2TM HiperFETTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 42A Ω ≤ 145mΩ TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings VDSS

Contextual Info: Preliminary Technical Information IXFK98N50P3 IXFX98N50P3 Polar3TM HiPerFETTM Power MOSFETs VDSS ID25 = = 500V 98A  50m 250ns RDS on   trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) G D S Symbol Test Conditions

42n50

Contextual Info: IXFH42N50P2 IXFT42N50P2 Polar2TM HiperFETTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 42A Ω ≤ 145mΩ TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR

Contextual Info: Polar2TM HiperFETTM Power MOSFET VDSS ID25 IXFH42N50P2 IXFT42N50P2 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol = 500V = 42A Ω ≤ 145mΩ Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

Resistor MSB 124

Abstract: RK738 RK 0313 asea resistor 5245 Resistor MSB 54 RRMH ASEA Rod Resistors asea pin terminal asea time-lag relay RI RRMH
Contextual Info: Catalogue RK 7 8 -2 E RELAY COM PONENTS STUD-TYPE RTLF stud-type diode, p. 1 RTNK sho rt-circuitin g com p orten , p. 2 MRB, MSB stud-type resistors, pages 2, 3 MSTA, MSTB therm istors, p. 4 Accessories, p. 5 Plug-in type relay com ponents, oil-fille d capa­

Contextual Info: ÖIXYS Thyristor Modules Thyristor/Diode Modules MCC 26 iTRMS = 2 x 50 A MCD 26 ITAVM = 2 x 3 2 A V RRM = 8 - 1 v RRM V DSM V DRM V V Version 1 B Version 8 B Version 8 B 900 1300 1500 1700 800 1200 1400 1600 MCC 26-08ÌO1 B MCC 26-12io1 B MCC 26-14io1 B MCC 26-08ÌO8 B

MC10116 application

Abstract: 1m358 OP-27 voltage regulator LM337 c9018 diode ZENER u22 SOT23 D3Q 1000pf through-hole capacitor C92 diode TDS 460
Contextual Info: 19-0317; Rev 1; 3/95 MAX2101 Evaluation Kit _Features ♦ ADCs Provide Greater than 5.3 Effective Bits and fS = 60Msps Data Rate, fIN = 15MHz _Ordering Information PART MAX2101EVKIT-SO TEMP. RANGE 0°C to +70°C BOARD TYPE

m1722

Abstract: M1247 BYQ27 DIODE m1 M3048 M3066 M3066A BYQ27-50 m8013
Contextual Info: 51.E T> m 711062t. o o m n o PHILIPS INTERNATIONAL 4TH « P H I N T - Ö 3 - /7 BYQ27 SERIES SbE D m m • B flÉ ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward

Contextual Info: SbE D • 711002b DDM1E5Û T^fl IPH IN DEVELOPMENT DATA BYR34 SERIES This data sheet contains advance information and specifications are subject to change w ithout notice. PHILIPS INTERNATIONAL ShE D T -03-17 ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward

m3181

Abstract: 3045Pt 3040PT PBYR3035PT PBYR3040PT 076-AA PBYR3045PT R2M* Avalanche Diode
Contextual Info: PBYR3035PT PBYR3040PT PBYR3045PT PHILIPS INTERNATIONAL 5bE D 711005b DDmTTH 7bG • P H I N 't-û 3 -tr SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage platinum-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence o f stored charge. They are intended fo r use in switched-mode

eZ80F91

Abstract: WR32 ED2977
Contextual Info: Product Update UP006109-0910 Errata for eZ80Acclaim! eZ80F91 Silicon eZ80F91 MCU with Part Numbers and Date Codes 0317 and Later The errata listed in Table 1 highlights the issues and workarounds if available for Zilog’s eZ80F91 product with package part numbers eZ80F91AZ050SG, eZ80F91AZ050EG, eZ80F91NA050SG, and

BYU28

Abstract: ml723 BYU28 200 OD412 m1722 M3066 BYQ28 diode BYq28 1CR101 M1720
Contextual Info: SbE D • 711002b 00412DD 171 ■ PHIN BYQ28 SERIES T -03-17 •HILIPS i n t e r n a t i o n a l ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft recovery characteristic. T hey are intended fo r

BYP20-50

Abstract: DIODE 158 M3092 BYP20 M3331 M3332 M3334 T-03-L
Contextual Info: 5bE D TllOêSb GGMllbS S3Ö IPHIN BYP20 SERIES nHILIPS INTERNATIONAL SbE D ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE T -Ô 3 -I7 Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low reverse

BYV118F

Abstract: BYV118F-35 IEC134 iV13
Contextual Info: N AMER PHILIPS/DISCRETE m 1^53^31 O O S S k ? 11! Ö m BSE » BYV118F SERIES _ _ _ I 7 =0 2 - 1 7 SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage platinum-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes

BYV32F

Abstract: BYV32F-50
Contextual Info: BYV32F SERIES T -03-1 7 PHILIPS INTERN A T I O N A L SbE J> 711002b J V_ 00413bfl âlfl • PHIN ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in SOT-186 full-pack plastic

bd7995

Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
Contextual Info: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND

Homalite H100

Abstract: FND357 h100 1670 seven segment 4 pin seven segment 2 digit Seven Segment Cathode Display "Seven Segment LED Display" R6310 PIN CONFIGURATION of 10 pin 7 segment display 16 pin seven segment
Contextual Info: 0.362-INCH SEVEN SEGMENT DISPLAY M QUALITY • [ t e c h n o l o g ie s HIGH EFFICIENCY RED FND317 FEATURES Exactly pin and package compatible with popular FND357 and FND367 Series displays Compact — 10 digits in 3-inch panel width Right-hand decimal configuration

3 phase inverter circuit

Abstract: IRS2607DSPBF PWM USING IC 555 TIMER dc motor control IC 555 timer motor control D2 13001 igbt driver with 555 timer
Contextual Info: IRS2607DSPbF_Rev23 Data Sheet No. PD 60273 IRS2607DSPbF HIGH AND LOW SIDE DRIVER Features • • • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage, dV/dt immune

3 phase inverter circuit

Abstract: IRS2609DSPBF
Contextual Info: IRS2609DSPbF June 1, 2011 IRS2609DSPbF HALF-BRIDGE DRIVER Features • • • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage – dV/dt immune Gate drive supply range from 10 V to 20 V

3 phase inverter circuit

Abstract: irs2608 IRS2608DSPBF pwm 555 timer mosfet driver power inverter circuit diagram using 555 ic DC motor speed control using IC 555 3 phase inverters circuit diagram 1gbt
Contextual Info: IRS2608DSPbF June 1, 2011 IRS2608DSPbF HALF-BRIDGE DRIVER Features • • • • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage – dV/dt immune Gate drive supply range from 10 V to 20 V

2 volt zener

Abstract: CA314Q REGULATOR IC 7915 CA3140S power supply in ic 7915 circuit diagram ano51 D2201 IC Generator to 10MHz triangle CS27a ca314 DE
Contextual Info: HA RR IS S E M I C O N D S E C T O R H a r r i 4QE ]> • 4302571 0031746 7 BIHAS T-K-IS s C A 3 1 4 0 A C A 3 1 4 0 BiMOS Operational Amplifiers with MOSFET Input/Bipolar Output August 19 9 1 Features Description • MOSFET input Stage The CA3140A and CA3140 are Integrated-circutt