BYP20 Search Results

M3335

Abstract: 6075A BYP20 1 MBH 50 D 100
Contextual Info: SbE T> TllOflSb ODMllbS 533 IPHIN BYP20 SERIES nHILIPS INTERNATIONAL SbE D ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE 7 - 0 3 - I 7 Glass-passivated, high-efficiency epitaxial rectifie r diodes in plastic envelopes, featuring low reverse

Contextual Info: BYP20 SERIES J v_ ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low reverse leakage current, low forward voltage drop, ultra fast reverse recovery times w ith very low stored

BYP20-50

Abstract: DIODE 158 M3092 BYP20 M3331 M3332 M3334 T-03-L
Contextual Info: 5bE D TllOêSb GGMllbS S3Ö IPHIN BYP20 SERIES nHILIPS INTERNATIONAL SbE D ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE T -Ô 3 -I7 Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low reverse

Contextual Info: *' N AflER PHILIPS/DISCRETE ^ I f ' * bbS3131 DQ2E3S7 a • BYH2U SERIES ESE D ■ P O S -/7 J V. ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low reverse

pby 345

Abstract: BYW93 pbyr BYX56 56360A BYW31
Contextual Info: INDEX _y v. Type No. Page 43 55 65 69 81 BYV92 series B Y V 1 18 series BYV118F series B Y V 120 series BYV121 series 461 469 479 483 491 BY229 series BY229F series BY249 series BY249F series BY329 series 93 105 117 123 131 BYV133 series BYV133F series BYV143 series

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

DIODE 158

Abstract: M3335 BYP20 M3332 BYP20-50 M3334 T03-17 ir5m M3092 BYH2
Contextual Info: ~ N AMER PHI LIPS/DISCRETE ESE D ~ t i ' bbS3131 * G02S3S7 5 • BYKÜU SERIES •POS-/7 ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low reverse

Contextual Info: WILLAS FM120-M+ DTA114TE THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

M3335

Abstract: DIODE 158 BYP20 M3331 M3332 BYH2
Contextual Info: N AMER PHI LIPS/DISCRETE ~ \ [ bbS3131 GG22357 fi • BYKklU ¡SERIES 2 SE D ■nos-17 ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low reverse

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

Contextual Info: WILLAS FM120-M+ DTC114TE THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.