DIODE 0229 Search Results

PS30L30

Abstract: 1E05
Contextual Info: STPS30L30DJF High efficiency power Schottky diode Datasheet − production data Features • Low forward voltage drop ■ Very small conduction losses ■ Negligible switching losses ■ Avalanche rated ■ Extremely fast switching ■ Low thermal resistance

6685E

Contextual Info: 1SV269 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 269 CATV TUNING. High Capacitance Ratio : C2V/C25V = 11.5 Typ. Low Series Resistance : rs = 0.550 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Small Package

Contextual Info: 1SV239 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 239 VCO FOR UHF RADIO Ultra Low Series Resistance : rs = 0.440 Typ. Useful for Small Size Set MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature

PS40SM120CTN

Abstract: STPS40SM120CR
Contextual Info: STPS40SM120C Power Schottky rectifier Datasheet − production data Features A1 • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation K A2 K K Description A2 This Schottky diode is suited for high frequency

PS20M120SR

Abstract: PS20M120STN
Contextual Info: STPS20M120S Power Schottky rectifier Datasheet − production data Features A K • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A K K A Description A This Schottky diode is suited for high frequency

6356E

Contextual Info: 1SV262 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE CATV TUNING. SILICON EPITAXIAL PLANAR TYPE 1 SV2 6 2 High Capacitance Ratio : C2V / C25V = 12.5 Typ. Low Series Resistance : rs = 0.60 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Small Package

STPS20

Abstract: PS20S STPS20SM120S
Contextual Info: STPS20SM120S Power Schottky rectifier Datasheet − production data Features A K • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A K K A Description A This Schottky diode is suited for high frequency

Contextual Info: STPS40SM120C Power Schottky rectifier Datasheet − production data Features A1 • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation K A2 K K Description A2 This Schottky diode is suited for high frequency

Contextual Info: STPS20M120S Power Schottky rectifier Datasheet − production data Features A K • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A K K A Description A This Schottky diode is suited for high frequency

Contextual Info: STPS40M120C Power Schottky rectifier Datasheet − production data Features A1 • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation K A2 K K Description A2 This Schottky diode is suited for high frequency

Contextual Info: STPS20SM120S Power Schottky rectifier Datasheet − production data Features A K • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A K K A Description A This Schottky diode is suited for high frequency

PS40M120CT

Abstract: STPS40M120CR
Contextual Info: STPS40M120C Power Schottky rectifier Datasheet − production data Features A1 • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation K A2 K K Description A2 This Schottky diode is suited for high frequency

Contextual Info: STPS30SM120S Power Schottky rectifier Datasheet − production data Features A K • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A K K This Schottky diode is suited for high frequency switch mode power supply.

1SV309

Abstract: C25V
Contextual Info: 1SV309 TO SH IBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV3 0 9 UHF SHF TUNING High Capacitance Ratio : C2V / C25V = 5.7 Typ. : rs = 1.20 (Typ.) Low Series Resistance Excellent C-V Characteristics, and Small Tracking Error Useful for Small Size Tuner

Contextual Info: TOSHIBA 1SV282 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 28 2 Unit in mm CATV TUNING • • • • High Capacitance Ratio : C2V/C25V = 12.5 TYP. Low Series Resistance : rs = 0.60 (TYP.) Excellent C-V Characteristics, and Small Tracking Error.

Contextual Info: STPS30M120S Power Schottky rectifier Datasheet − production data Features A K • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A K K This Schottky diode is suited for high frequency switch mode power supply.

ps30m120stn

Abstract: PS30M
Contextual Info: STPS30M120S Power Schottky rectifier Datasheet − production data Features A K • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A K K This Schottky diode is suited for high frequency switch mode power supply.

Contextual Info: 1SV245 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 24 5 UHF SHF TUNING High Capacitance Ratio : C2V/C25V = 5.7 Typ. Low Series Resistance : rs = 1.20 (Typ.) Excellent C - V Characteristics, and Small Tracking Error. MAXIMUM RATINGS (Ta = 25°C)

1SV280

Abstract: 6890E
Contextual Info: 1SV280 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV280 VCO FOR UHF BAND RADIO • • • High Capacitance Ratio : C2v /C;lov = 2.4 TYP. Low Series Resistance : rs = 0.440 (TYP.) Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)

1SV232

Abstract: C25V
Contextual Info: 1SV232 TO SH IBA 1 S V2 3 2 TOSHIBA VARIABLE CAPACITANCE DIODE CATV TUNING. SILICON EPITAXIAL PLANAR TYPE • High Capacitance Ratio : C2 V / C25 V = 10.5 Typ. • Excellent C-V Characteristics, and Small Tracking Error. • Useful for Small Size Tuner.

Contextual Info: 1SV231 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE CATV TUNING. • • • SILICON EPITAXIAL PLANAR TYPE 1 SV231 High Capacitance Ratio : C2 y /C 2 5 V = 15 Typ. Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. Unit in mm

1SV279

Abstract: 2599E
Contextual Info: 1SV279 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 279 VCO FOR V/UHF BAND RADIO • • • High Capacitance Ratio : C2v /C;lov = 2.5 TYP. Low Series Resistance : rs = 0.20 (TYP.) Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 1SV270 TOSHIBA 1 SV270 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • High Capacitance Ratio Low Series Resistance Small Package SILICON EPITAXIAL PLANAR TYPE Unit in mm : C1V/C4V = 2.0 Typ. : rs = 0.28Ü (Typ.) M A X IM U M RATINGS (Ta = 25°C)

marking BL

Abstract: 1sv128
Contextual Info: TOSHIBA 1SV128 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1 S V 128 V H F -U H F BAND RF ATTENUATOR APPLICATIONS. • • Small Package Small Total Capei tance : Cx = 0.25pF Typ. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Forward Current