DIODE 0102 Search Results

tyco igbt 6a

Contextual Info: Targetdatasheet flow PIM 0+P, 600V, 4A Version 0102 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Diode Inverter Diode Wechselrichter DC forward current Dauergleichstrom Repetitive peak forward current Periodischer Spitzenstrom

BYV29B-600

Contextual Info: BYV29B-600 Rectifier diode ultrafast Rev. 01 — 11 August 2003 Product data M3D166 1. Product profile 1.1 Description Ultra-fast, epitaxial rectifier diode in a surface mount plastic package. Product availability: BYV29B-600 in SOT404 D2-PAK . 1.2 Features

BIDIRECTIONAL DIODE

Abstract: BZV37
Contextual Info: Product specification Philips Semiconductors Bidirectional voltage regulator diode BZV37 FEATURES DESCRIPTION • Low total power dissipation: max. 400 mW Low-power voltage regulator diode in an hermetically sealed leaded glass SOD68 DO-34 package. • Working voltage: nom. 6.5 V

Contextual Info: PRELIMINARY 5SDF 0102C0400 5SDF 0102C0400 High Frequency Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses  High operational reliability Applications  Welding equipment  High current application up to 10 kHz

5SDF0102C0400

Contextual Info: PRELIMINARY 5SDF 0102C0400 5SDF 0102C0400 High Frequency Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses  High operational reliability Applications  Welding equipment  High current application up to 10 kHz

ABB 12 30 01

Abstract: 5SDF0102C0400 diode tfr
Contextual Info: PRELIMINARY 5SDF 0102C0400 5SDF 0102C0400 High Frequency Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses  High operational reliability Applications  Welding equipment  High current application up to 10 kHz

MBD-1005

Abstract: 1005LT
Contextual Info: MOTOROLA Order this docum ent by MMBD1005LT1/D SEMICONDUCTOR TECHNICAL DATA G L r e e n i n e MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the G reenLine P ortfolio o f devices with e n e rg y -c o n s e rv in g traits. This sw itching diode has the fo llo w in g features:

PWSN0008DD-A

Abstract: RJK0389DPA RJK0389DPA-00-J0 MOS2
Contextual Info: RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1722-0102 Preliminary Rev.1.02 Jul 25, 2008 Features • • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free

MRD821

Contextual Info: MOTOROLA SE M IC O N D U C T O R TECHNICAL DATA MRD821 P h o to D e te c to r Diode Output T h is device is d e sig n e d for infrared rem ote control an d other se n sin g applications, and can be u se d in conjunction with the M L E D 8 1 infrared em itting diode.

CM05B

Abstract: D65084 1N78 1N5764 1N5764MR C65101
Contextual Info: MIL-s-19500&l EL 19November 1971 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE,GALLIUM ARSENIDE, MIXER TYPE1N5764, and 1N5764MR 1N5764M , . 1. ScOPE 1.1Scope.Thisspecification covers thedetailrequirements forGal!iumArsenide, Luw Barrier, HighSee:itivity,

bv42

Abstract: STBV42D st marking code
Contextual Info: STBV42D High voltage fast-switching NPN power transistor Preliminary data Features • High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed ■ Integrated free-wheeling diode Application ■ Compact fluorescent lamps CFLs

L73DL

Abstract: diode marking w1 NPN transistor Electronic ballast to92
Contextual Info: STL73D High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed ■ Integrated antiparallel collector-emitter diode Application ■ Electronic ballast for fluorescent lighting

Contextual Info: STBV42D High voltage fast-switching NPN power transistor Preliminary data Features • High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed ■ Integrated free-wheeling diode Application ■ Compact fluorescent lamps CFLs

MOC263

Contextual Info: MOTOROLA O rder this docum ent by MOC263/D SEMICONDUCTOR TECHNICAL DATA MOC263 Small Outline Optoisolators [CTR = 500% Min] Darlington Output No Base Connection Motorola Preferred Device These devices consist of a gallium arsenide infrared emitting diode optically

PS2533L-1-A

Abstract: BELL MOUTH EN60747-5-2 NL601 PS2533-1 PS2533L-1 PS2533L-1-E3 PS2533L-1-E4 VDE0884 ps2533
Contextual Info: PHOTOCOUPLER PS2533-1,PS2533L-1 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES −NEPOC Series− DESCRIPTION The PS2533-1 and PS2533L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN

2533 nec

Abstract: ps2533 PS2533L-1-F3-A PS2533L-1-V-A PS2533L-1-A EN60747-5-2 NL601 PS2533-1 PS2533L-1 PS2533L-1-E3
Contextual Info: DATA SHEET PHOTOCOUPLER PS2533-1,PS2533L-1 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES −NEPOC Series− DESCRIPTION The PS2533-1 and PS2533L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN

NEC 2532

Abstract: pc 2532 nec PS2532 ps2532-1-a NEC Systems speech PN10232EJ02V0DS
Contextual Info: DATA SHEET PHOTOCOUPLER PS2532-1,PS2532L-1 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES −NEPOC Series− DESCRIPTION The PS2532-1 and PS2532L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN

transorb diode

Abstract: str 450 a transorb derating transorb 7483 SP11 mascot v
Contextual Info: 8862 Max. 81 W DC/DC CONVERTERS - SWITCH MODE - WITH ELECTRICAL SEPARATION - REGULATED • Sikret mot polvending og • • • • • overspenning transorb diode mot transienter . Automatisk utkobling v/spenninger over eller under det spesifiserte området. Sikring på

Contextual Info: RF2320 Preliminary 3 LINEAR GENERAL PURPOSE AMPLIFIER Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description 0.158 0.150 The RF2320 is a general purpose, low-cost, high-linearity

PS2532

Abstract: PS2532-1 PS2532L-2-E3 PS2532-2 PS2532L-1 PS2532L-1-E3 VDE0884 PS2532L-1-F4-A
Contextual Info: PHOTOCOUPLER PS2532-1,-2,-4,PS2532L-1,-2,-4 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2532-1, -2, -4 and PS2532L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode

PS2533

Abstract: PS2533-1 PS2533-2 PS2533L-1 PS2533L-1-E3 PS2533L-2-E3 VDE0884
Contextual Info: PHOTOCOUPLER PS2533-1,-2,-4,PS2533L-1,-2,-4 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2533-1, -2, -4 and PS2533L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode

Contextual Info: STBV42D High voltage fast-switching NPN power transistor Preliminary data Features • High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed ■ Integrated free-wheeling diode s ct u d o Application ■ r P e Compact fluorescent lamps (CFLs)

NEC 2532

Abstract: PS2532-2 pc 2532 nec PS2532 PS2532-1 PS2532-4 PS2532L-1 PS2532L-1-E3 PS2532L-2-E3 VDE0884
Contextual Info: DATA SHEET PHOTOCOUPLER PS2532-1,-2,-4,PS2532L-1,-2,-4 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES −NEPOC TM Series− DESCRIPTION The PS2532-1, -2, -4 and PS2532L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode

NEC 2532

Abstract: PS2532 2532 NEC pc 2532 nec PS2532L-2-E3 VDE0884 PS2532-1 PS2532-2 PS2532L-1 PS2532L-1-E3
Contextual Info: DATA SHEET PHOTOCOUPLER PS2532-1,-2,-4,PS2532L-1,-2,-4 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES −NEPOC Series− DESCRIPTION The PS2532-1, -2, -4 and PS2532L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode