DIODA SS 14 Search Results

AAP152

Abstract: cemi
Contextual Info: DIODA UNIWERSALNA AÄP152 2 - 74/1 SWW 1156-121 Dioda germanowa ostrzowa AAP152 charakteryzuje siç maiym napiçciem przewodzenia. Jest ona przeznaczona glównie do stosowania w ukladach zabezpieczaj^cych, pomiarowych i automatyki. HI» '' 2,71 SS h 5,85 r w

CNV17F-4

Abstract: CNV17 CNY 42 optocoupler dioda CNV17F
Contextual Info: SIEMENS FEATURES • H igh C urrent T ran sfer R atio C N Y 1 7F -1,40-80% C N Y 1 7F -2,63-125% C N Y 1 7 F -3 ,100-200% C N Y 1 7 F -4 ,160-320% 17 CNY F S E R IE S PHOTOTRAÑSÍSTOR NO BASE CONNECTION OPTOCOUPLER Package Dimensions in Inches mm t fa i fg] f t l

dioda

Abstract: BPYP21 CQYP17
Contextual Info: 5-74/3 DIODA ELEKTROLUMINESCENCYJNA CQYP17 SWW 1156-6 Dioda elektrolum inescencyjna w ykonana z arsen k u galu stanow i zrodio prom ieniow ania podczerwonego o stru m ieniu ciqglym lub m odulow anym . Z najduje ona zastosow anie p rzy w spölpracy z fo to tra n zystorem BPYP21 jako w skaznik konca tasm y w czytnikach tasm perforow anych oraz w u kladach lokacji optycznej, w ukladach au to m aty k i i k o n troli oraz w tech nice pom iarow ej.

4804C

Abstract: NA-06 SFH480403
Contextual Info: SIEM EN S G a A I A s - L a s e r D io d e 1 0 0 0 m W S F H 4 Ö0 4 0 2 SFH 480403 Features * Monochromatic coherent radiafcon source for pulse and cw-Qpeiation • M Q CV D querifurii-well structure * Dieleotrc asymmetric coated laser mirrors * Emissionwi-dth: 20C u.m

dioda BY 235

Abstract: DIODA SS 14
Contextual Info: IR FR /U 420A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ By* = 500V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA M ax @ Vos = 500V

2N6767

Contextual Info: 2N6767 2N6768 23 H a r r is N-Channel Enhancem ent-M ode Power M OS Field-Effect Transistors A u g u s t 1991 Features Package T O -2 0 4 A A • 12A a n d 14A, 3 5 0 V - 4 0 0V B O T T O M V IE W • ro s o n = 0.4Î1 an d 0.3ÎÎ • S O A is P o w e r-D is sip a tio n Lim ited

dioda by 238

Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100
Contextual Info: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching

NX DIODE SM

Abstract: 2N6164 2N6764 q2N6764 MOSF6
Contextual Info: 38 75081 01 G E S O L I D S T A TE 0 1E B e | 3fi7SDfil DDlflMDD 3 | - 18400 _ D 3 Standard Power MOSFETs 2N6764 File Number 1590 Power M O S Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -C H A N N E L E N H A N C E M E N T M O D E

APT5012JNU2

Abstract: tl3060 rrmk 1
Contextual Info: A dvanced P o w er Te c h n o l o g y APT5012JNU2 500V 43A 0.12Í2 ISOTOP® PO W ER MOS IV N -C H A N N E L ENHANCEM ENT M ODE HIGH VOLTAGE POW ER M OSFETS MAXIMUM RATINGS Symbol V D SS All Ratings: T c = 25°C unless otherwise specified. Parameter UNIT

Contextual Info: Si GEC PLESSEY PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS4313 -1.2 IT E 3 5 F 1 2 /IT E 3 5 C 1 2 POWERLINE N-CHANNEL IGBT WITH OPTIONAL ULTRAFAST DIODE The ITE35X12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

OA7 diode

Abstract: AL 1450 DV
Contextual Info: Data Sheet No. PD-9.877 INTERNATIONAL RECTIFIER I« R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR 60 Volt, 0.017 Ohm HEXFET IRFV064 Product Summary Part Number The HEXFET® technology is the key to International Rectifier's advanced line of power M O S FE T transistors.

rj dioda

Contextual Info: - I N T E R N A T I O N A L RECTIFIER IO R in t e r n a t io n a l 73 2.5 -/? DE~| 4ÖSS4SB OOObTM? 0 | ~ Data Sheet No. PD-3.149 r e c t if ie r S30DF S E R IE S 1600-1400 VOLTS RANGE STANDARD TURN-OFF TIME 30 fjs 290 AMP RMS, RING AM PLIFYING GATE INVERTER TY P E STUD MOUNTED S C R s

MDA980-1

Abstract: MDA990-6 MDA990-1 MDA980-6 dioda bridge pj 66 diode pj 50 diode pj 56 diode dioda 30 Ampere dioda rectifier
Contextual Info: MDA980-1 n, MDA980-6 MDA990-1 thru MDA990-6 Designers Data Sheet S IN G L E P H A S E F U L L - W A V E B R ID G E I N T E G R A L D IO D E A S S E M B L I E S 12 and 30 A M PERES 50 t h r u 600 V O LTS . . . passivated, diffused silicon dice interconnected and transfer

Katalog CEMI

Abstract: OA81 diode byp 660-50r Philips BC147 p 181 transoptor Mullard oa81 Hitachi 12V MS 5A-181 OA81 BA102 diode telefunken hr 780 rds
Contextual Info: WSTIJP W ydaw nictw a Przem yslu M aszynowego WEMA przekazujq uzytkow nikom branzow y katalog pt. E l e m e n t y pólp rz e w o d n i k o w e , zaw ierajqcy dokladne inform acje techniczne dotycz^ce elem entów pólprzew odnikow ych produkow anych w Polsce n a skal^ przem yslow ^. W szystkie w yroby

sn 1699

Contextual Info: What H E W L E T T * miltm PACKARD 2 - 26.5 GHz GaAs MMIC Traveling Wave Amplifier Technical Data HMMC-5021 2-22 GHz HMMC-5022 (2-22 GHZ) HMMC-5026 (2-26.5 GHz) Features • Wide-Frequency Range: 2-26.5 GHz • High Gain: 9.5 dB • Gain Flatness: 0.75 dB

74188

Abstract: 74181 ALU SN54181J AM9341 SN74181N ALU pin specification 74181 circuit ALU 74-181 74181 alu active high 74181 pin diagram 74181 pin configuration
Contextual Info: 0/^-5 I I Am9341-Am54/74181 Four Bit Arithmetic Logic Unit/Function Generator Distinctive Characteristics: Full look-ahead for high-speed arithm etic operation on long words. 100% reliability assurance testing in compliance with M IL STD 883. Mixing privileges for obtaining price discounts. Refer

VHF FRONT END

Abstract: U4062B u4062 dioda MV 5 U 4062-B Linear Technology ltage e3 IR 4062 telefunken hi-fi
Contextual Info: 44E D a öiSQQ'ifci DGlü^SO 4 E3 ALÊG U 4062 B •U 4062 B-FP TELEFUNKEN ELECTRONIC _ VHF FRONT END FOR CAR RADIOS AND HiFi RECEIVERS Technology: Bipolar ‘ . . / T " ”7 7 - 0 5 ^ 0 5 Fe atures: • Com pletely integrated F M front end

ot31

Abstract: 0P-50 pmi op50 0p50
Contextual Info: ANALOG DEVICES High-Output-Current Operational Amplifier /W > 5 0P-50 □ FEATURES • • a « • • • • a • • ORDERING INFORMATION! Open-Loop Qatn. . 10,000,000v/v Min Low Input Offset Voltage . .25iN Max

HV400CP

Abstract: HV400IP hv4001 HY400 scr gate driver ic HV400 SCR TRIGGER PULSE TRANSFORMER EFJ142 sKA-2 DIODE 86CM
Contextual Info: Hl/400 HARRIS S E M I C O N D U C T O R Ë È W h V i-fC C C P ay 1992 High Current M O S F E T Driver Features Description • Fast Fail T im e s . 16ns at 10,QQ0pF The HV400 is a single monolithic, non-inverting high current

Contextual Info: TYPES SN74LS670, SN54LS670 4-BY-REGISTER FILES WITH 3-STATE OUTPUTS BULLETIN NO. DL-S 7612122, MARCH 1974 - REVISED DECEMBER 1983 • Separate Read/Write Addressing Permits Simultaneous Reading and Writing • Fast A cce ss Tim es . . . Typically 20 ns • Organized as 4 Words of 4 Bits

BTP-128-400

Abstract: blyp22 BTP128 p 181 transoptor CQDP74 BZP683 Bfcp99 UCY74123 BD282 BTP129
Contextual Info: jfifj U N I T P R tS l GEMI E L E M E N T Y P Ö t P R Z E W O D N I K O W E I U K L A D Y S C A L O N E 1 9 7 9 /8 0 KATALOG SKRÖCONY ► • ■■ H U II ■ I S ■ . -. I . . . . . NAUKOWO-PRODUKCYJNE CENTRUM PÖIPRZEWODNIKÖW NAUKOWO-PRODUKCYJNE CENTRUM PÓLPRZEWODNIKÓW

IC 7447

Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Contextual Info: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222

tektronix type 576 curve tracer

Abstract: tektronix 576 curve tracer Tracer 176 MR756 2n4401 die DIODO 4001 real time application of ASTABLE mode AN915 MOTOROLA line frequency diode AN915
Contextual Info: AN915 MOTOROLA Semiconductor Products Inc. Application Note CHARACTERIZING COLLECTOR-TO-EMITTER AND DRAIN-TO-SOURCE DIODES FOR SWITCHMODE APPLICATIONS Prepared by Al Pshaenich Motorola Inc., Semiconductor Group Phoenix, Arizona ABSTRACT Most power Darlington transistors and power MOSFETs con­

HD46508PA

Abstract: HD46508P HD46508 HD46508P-1 HD46508-1 HD46508A HD46508A-1 HMCS6800 HD46508P1 Hitachi Scans-001
Contextual Info: HD46508, HD46508-1, -HD46508A, HD46508A-1 ADU Analog Data Acquisition Unit The HD46508 is a monolithic NMOS device with a 10-bit analog-to-digjtal converter, a programmable voltage comparator, a 16-channel analog multiplexer and HMCS6800 microprocessor