DIM800DDM17 Search Results

DIM800DDM17-A000

Abstract: DIM800DDM17
Contextual Info: DIM800DDM17-A000 DIM800DDM17-A000 Dual Switch IGBT Module Replaces May 2001, version DS5433-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5433-3.0 March 2002

DIM800DDM17-A000

Abstract: DIM800DDM17-A bi-directional switches IGBT
Contextual Info: 6 3 DS5433-5 June 2009 LN26751 14 ±0.2 ±0.2 Replaces DS5433-4.1 July 2002 Dual Switch IGBT Module 11.5 DIM800DDM17-A000 FEATURES ±0.2 • ±0.2 10µs Short Circuit Withstand 18 6 x O7 KEY PARAMETERS 28 ±0.5  High44 Thermal ±0.2 Cycling Capability

bi-directional switches IGBT

Abstract: 6.5kV IGBT AN5700 dynex igbt die bi-directional IGBT igbt full h bridge DIM200PLM33-A019 bidirectional switch "bi-directional switches" IGBT switched reluctance machine
Contextual Info: AN5700 - IGBT/FRD Identifier Part Numbering Scheme For IGBT & FRD Modules AN5700-1.4 February 2004 Since February 2001 Dynex has used the following part numbering scheme for new releases of product. A typical product has a part number of the form DIM800DDM17-A000, made up as below:

bi-directional switches IGBT

Abstract: DIM800DDM17-A000
Contextual Info: DIM800DDM17-A000 DIM800DDM17-A000 Dual Switch IGBT Module Replaces March 2002, version DS5433-3.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5433-4.1 July 2002

Contextual Info: DIM800DDM17-E000 DIM800DDM17-E000 Dual Switch IGBT Module PDS5619-1.2 June 2003 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK) ■ 10µs Short Circuit Withstand

Contextual Info: DIM800DDM17-A000 DIM800DDM17-A000 Dual Switch IGBT Module Preliminary Information DS5433-2.0 May 2001 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS

bi-directional switches IGBT

Abstract: DIM800DDM17-A000
Contextual Info: DIM800DDM17-A000 DIM800DDM17-A000 Dual Switch IGBT Module Replaces March 2002, version DS5433-3.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5433-4.1 July 2002

DIM800DDM17-A000

Contextual Info: DIM800DDM17-A000 DIM800DDM17-A000 Dual Switch IGBT Module Replaces March 2002, version DS5433-3.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5433-4.1 July 2002

Contextual Info: DIM800DDM17-A000 Dual Switch IGBT Module Replaces DS5433-4.1 July 2002 DS5433-5 June 2009 LN26751 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Non Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)

DIM800DDM17-E000

Contextual Info: DIM800DDM17-E000 DIM800DDM17-E000 Dual Switch IGBT Module PDS5619-1.2 June 2003 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK) ■ 10µs Short Circuit Withstand

Tag 225-600

Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

kpb 307

Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

IC1 723

Abstract: IGBT THEORY AND APPLICATIONS IGBT parallel DIM800DDM17-A000 AN5505 failure analysis IGBT DIM800DDM17
Contextual Info: AN5505 Application Note AN5505 Parallel Operation of Dynex IGBT Modules Application Note Replaces October 2001, version AN5505-1.2 AN5505-1.3 July 2002 INTRODUCTION IGBT modules can be connected in parallel to create a switch with a higher current rating. However, successful paralleling of

DCR370T

Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half bridges and single switches

2sd315ai

Abstract: 2sc0108t bi-directional switch IGBT driver 2SC0435T 2SD106AI 2SD106Ai-17 2sc0108 2sc0435 CT-Concept igbt trafo drivers
Contextual Info: AN 5946 Driving Dynex High Power IGBT modules with Concept Gate Drives Application Note AN5946-2.0 September 2009 LN26854 Author: Dinesh Chamund Introduction Dynex Semiconductor manufactures a variety of IGBT modules ranging from 1200V to 6500V and 100A to 2400A.

MP02X

Abstract: DCR10 DYNEX DG648 DCR1596SW DIM200PHM33
Contextual Info: a lp h a n u m e r ic p a r t lis t Part No. ACR300SG ACR400SE ACR44U DCR1002SF DCR1003SF DCR1006SF DCR1008SF DCR1020SF DCR1021SF DCR1374SBA DCR1375SBA DCR1376SBA DCR1474SY DCR1475SY DCR1476SY DCR1478SY DCR1574SY DCR1575SY DCR1576SY DCR1594SW DCR1595SW DCR1596SW

108X62

Contextual Info: powerline igbt modules IG B T M o d u le s Generic Part Number Voltage Grade Current Rating Circuit Type VcES V 'c (A) @ T case CQ Max. Saturation Current Voltage VCE(SAT) Rating (Typical) «CM (A) (V) Total Switching Energy Isolation Voltage (mJ) v« (kV)

DCR2950W

Abstract: igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half