DCR1021SF60
Abstract: DCR1021SF61 DCR1021SF62 DCR1021SF63 DCR1021SF65 DCR0121SF64 DCR1021SF DS5436-1
Contextual Info: DCR1021SF DCR1021SF Phase Control Thyristor Target Information DS5436-1.0 March 2001 FEATURES • Double Side Cooling ■ High Surge Capability ■ Low Inductance Internal Construction KEY PARAMETERS VDRM max IT(AV) (max) ITSM dV/dt dI/dt 6500V 840A 14000A
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dcr1021sfds5436-14000adcr1021sf65+5dcr0121sf64dcr1021sf63dcr1021sf62dcr1021sf61dcr1021sf60
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DCR1021SF65
Abstract: DCR0121SF64 DCR1021SF DCR1021SF60 DCR1021SF61 DCR1021SF62 DCR1021SF63
Contextual Info: DCR1021SF DCR1021SF Phase Control Thyristor DS5436-1.1 September 2001 FEATURES • Double Side Cooling ■ High Surge Capability ■ Low Inductance Internal Construction KEY PARAMETERS VDRM max IT(AV) (max) ITSM dV/dt dI/dt 6500V 840A 14000A 1000V/µs 100A/µs
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dcr1021sfds5436-14000adcr1021sf65+5dcr0121sf64dcr1021sf63dcr1021sf62dcr1021sf61dcr1021sf60
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DCR0121SF64
Abstract: DCR1021SF DCR1021SF60 DCR1021SF61 DCR1021SF62 DCR1021SF63 DCR1021SF65
Contextual Info: DCR1021SF DCR1021SF Phase Control Thyristor DS5436-1.1 September 2001 FEATURES • Double Side Cooling ■ High Surge Capability ■ Low Inductance Internal Construction KEY PARAMETERS VDRM max IT(AV) (max) ITSM dV/dt dI/dt 6500V 840A 14000A 1000V/µs 100A/µs
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dcr1021sfds5436-14000adcr1021sf65+5dcr0121sf64dcr1021sf63dcr1021sf62dcr1021sf61dcr1021sf60
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DCR1021SF60
Abstract: DCR1021SF61 DCR1021SF62 DCR1021SF63 DCR1021SF65 DCR0121SF64 DCR1021SF
Contextual Info: DCR1021SF DCR1021SF Phase Control Thyristor Target Information DS5436-1.1 September 2001 FEATURES • Double Side Cooling ■ High Surge Capability ■ Low Inductance Internal Construction KEY PARAMETERS VDRM max IT(AV) (max) ITSM dV/dt dI/dt 6500V 840A
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dcr1021sfds5436-14000adcr1021sf65+5dcr0121sf64dcr1021sf63dcr1021sf62dcr1021sf61dcr1021sf60
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MP02X
Abstract: DCR10 DYNEX DG648 DCR1596SW DIM200PHM33
Contextual Info: a lp h a n u m e r ic p a r t lis t Part No. ACR300SG ACR400SE ACR44U DCR1002SF DCR1003SF DCR1006SF DCR1008SF DCR1020SF DCR1021SF DCR1374SBA DCR1375SBA DCR1376SBA DCR1474SY DCR1475SY DCR1476SY DCR1478SY DCR1574SY DCR1575SY DCR1576SY DCR1594SW DCR1595SW DCR1596SW
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acr300sgacr400seacr44udcr1002sf+12dcr1003sfdcr1006sfdcr1008sfdcr1020sfdcr1021sfdcr1374sbamp02xdcr10dynexdg648dcr1596swdim200phm33
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DCR504ST
Abstract: DCR604SE DCR720E DCR803SG DCR806SG DCR818SG DCR820SG DCR504
Contextual Info: AN5001 Application Note AN5001 Use Of The VTO, rT On-state Characteristic Model Application Note Replaces July 2002 version, AN5001-4.1 AN5001-5.0 October 2002 The use of the VTO, rT on-state characteristic model and a more accurate alternative. where A, B, C and D are constants with values specific to the
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an5001an5001-4an5001-5dcr504st+7dcr604sedcr720edcr803sgdcr806sgdcr818sgdcr820sgdcr504
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DIODE GE
Abstract: DCR604SE DCR504S GE brand thyristor thyristor Vtm 6.5 DCR504ST DCR720E DCR803SG DCR806SG DCR818SG
Contextual Info: AN5001 Application Note AN5001 Use Of The VTO, rT On-state Characteristic Model Application Note Replaces February 2003 version, AN5001-6.0 AN5001-7.0 February 2004 The use of the VTO, rT on-state characteristic model and a more accurate alternative. where A, B, C and D are constants with values specific to the
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an5001an5001-6an5001-7diode ge+9dcr604sedcr504sge brand thyristorthyristor vtm 6.5dcr504stdcr720edcr803sgdcr806sgdcr818sg
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BST45
Abstract: DCR806 DCR604SE
Contextual Info: phase control th y ris to rs discs 1 Pt D isc D evices l2t @ T v| V IT TO @ T v) @ T vl (kA) (A2sx103) (V) (mil) 717 6.8 231 1.05 1850 1045 1511 2694 3600 2900 1641 2374 4230 5655 32.5 14 26.25 50 61.2 5280 975 3440 12500 18750 100-2100 100-2800 100-2800
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dcr504stsx103dcr1002sfdcr803sg+8dcr1003sfdcr1374sbadcr1474sydcr604sedcr806sgdcr1375sbabst45dcr806
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