DIM600BSS Search Results

DIM600BSS17-E000

Abstract: DIM600WBSS17-E000
Contextual Info: DIM600BSS17-E000 DIM600BSS17-E000 Single Switch IGBT Module Replaces November 2003, version PDS5681-1.0 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand PDS5681-2.1 December 2003

Contextual Info: DIM600BSS17-A000 DIM600BSS17-A000 Single Switch IGBT Module FDS5695-1.2 December 2003 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Base Plate KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V

1.2397

Abstract: bi-directional switches IGBT DIM600BSS12-E000 IGBT full bridge 1200
Contextual Info: DIM600BSS12-E000 DIM600BSS12-E000 Single Switch IGBT Module Replaces issue September 2003, version PDS5651-2.0 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand PDS5702-1.2 January 2004

DIM600BSS12-A000

Abstract: transistor 600v 500a
Contextual Info: DIM600BSS12-A000 DIM600BSS12-A000 Single Switch IGBT Module Replaces February 2004 version, issue PDS5692-2.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5692-3.0 June 2004 KEY PARAMETERS VCES typ

Contextual Info: DIM600BSS12-E000 DIM600BSS12-E000 Single Switch IGBT Module Replaces issue September 2003, version PDS5651-2.0 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand PDS5651-3.0 September 2003

DIM600BSS12-A000

Contextual Info: DIM600BSS12-A000 DIM600BSS12-A000 Single Switch IGBT Module DS5692-3.1 June 2007 LN25362 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate KEY PARAMETERS VCES VCE(sat)* (typ) IC (max) IC(PK) (max) 1200V

Contextual Info: DIM600BSS12-E000 DIM600BSS12-E000 Single Switch IGBT Module Replaces issue September 2003, version PDS5651-2.0 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand PDS5702-1.2 January 2004

Contextual Info: DIM600BSS12-E000 DIM600BSS12-E000 Single Switch IGBT Module Replaces issue September 2003, version PDS5651-2.0 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand PDS5702-1.2 January 2004

DIM600BSS17-A000

Abstract: DIM600BSS17 dim600bss
Contextual Info: DIM600BSS17-A000 Single Switch IGBT Module Replaces DS5695-1.4 DS5695-2 October 2010 LN27625 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  Non Punch Through Silicon  Isolated Cu Base with Al2O3 Substrates VCES VCE(sat) * (typ) IC (max)

DIM600BSS17-A000

Contextual Info: DIM600BSS17-A000 Single Switch IGBT Module DS5692-1.4.0 September 2007 LN25581 FEATURES 10 s Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate KEY PARAMETERS VCES VCE (sat) * (typ) IC (max) IC(PK) (max) 1700V 2.7 V 600A 1200A *(Measured at the power bus-bars and not the auxiliary

DIM600BSS12-A000

Contextual Info: DIM600BSS12-A000 DIM600BSS12-A000 Single Switch IGBT Module Replaces December 2003 version, issue DS5692-1.3 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate PDS5692-2.0 February 2004 KEY PARAMETERS VCES

Contextual Info: DIM600BSS12-A000 DIM600BSS12-A000 Single Switch IGBT Module DS5692-1.3 December 2003 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate KEY PARAMETERS VCES typ VCE(sat)* (max) IC (max) IC(PK) 1200V 2.2V

Tag 225-600

Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

kpb 307

Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

2sd315ai

Abstract: 2sc0108t bi-directional switch IGBT driver 2SC0435T 2SD106AI 2SD106Ai-17 2sc0108 2sc0435 CT-Concept igbt trafo drivers
Contextual Info: AN 5946 Driving Dynex High Power IGBT modules with Concept Gate Drives Application Note AN5946-2.0 September 2009 LN26854 Author: Dinesh Chamund Introduction Dynex Semiconductor manufactures a variety of IGBT modules ranging from 1200V to 6500V and 100A to 2400A.

DCR2950W

Abstract: igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half