1.2397 Search Results

2f transistor

Abstract: 1.2397 2F P marking AT1388AF AT1388 AT1388A AT1388F LQFP48 LQFP-48P
Contextual Info: AT1388/AT1388A Preliminary Product Information 6-Channel DC-DC Controller for DSC Features General Description • Low start-up power supply voltage :1.4V CH6 • Wide supply voltage range from 2.5V to 6.5V (CH1~6) • High speed operation is possible: Maximum

rsn 3502

Abstract: rsn 3305 rsn 3404 RSN 3306 CL0116 1803 DFX equivalent transistor TT 3034 TT 2206 datasheet transistor tt 2222 ic sw 2604
Contextual Info: FS7000 SERIES 0.5

m STANDARD CELL 1998 FS73A_B HOLTEK Semiconductor Inc. TABLE OF CONTENTS - INDEX -I. Functional Index of Macrocells ………………………….………… I-1 II. Alphanumeric index of Macrocells …………………………….…… II-1

Contextual Info: DIM1600NSM12-E000 DIM1600NSM12-E000 Single Switch IGBT Module PDS5756-1.0 April 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK) ■ 10µs Short Circuit Withstand

LM2595J-ADJ-QML

Abstract: 143715 74594
Contextual Info: Military/Aerospace Analog Engineering N TOTAL DOSE RADIATION TEST I. INTRODUCTION Total dose radiation tests are designed to characterize changes in device performance due to total dose radiation. These tests are not intended to classify maximum radiation

1.2397

Abstract: DIM400BSS12-E000
Contextual Info: DIM400BSS12-E000 DIM400BSS12-E000 Single Switch IGBT Module PDS5705-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

IGBT inverter wind turbine

Abstract: DIM800DDM12-E000 43054
Contextual Info: DIM800DDM12-E000 DIM800DDM12-E000 Dual Switch IGBT Module PDS5749-1.2 April 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK) ■ 10µs Short Circuit Withstand

Contextual Info: DIM200BSS12-E000 DIM200BSS12-E000 Single Switch IGBT Module PDS5704-1.1 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

Contextual Info: DIM50CHS12-E000 DIM50CHS12-E000 Half Bridge IGBT Module PDS5712-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max) IC

Contextual Info: DIM100CHS12-E000 DIM100CHS12-E000 Half Bridge IGBT Module PDS5682-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

1.2397

Abstract: bi-directional switches IGBT DIM600BSS12-E000 IGBT full bridge 1200
Contextual Info: DIM600BSS12-E000 DIM600BSS12-E000 Single Switch IGBT Module Replaces issue September 2003, version PDS5651-2.0 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand PDS5702-1.2 January 2004

Contextual Info: DIM100WHS12-E000 DIM100WHS12-E000 Half Bridge IGBT Module PDS5710-1.1 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

Contextual Info: DIM200BSS12-E000 DIM200BSS12-E000 Single Switch IGBT Module PDS5704-1.1 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

Contextual Info: DIM600BSS12-E000 DIM600BSS12-E000 Single Switch IGBT Module Replaces issue September 2003, version PDS5651-2.0 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand PDS5702-1.2 January 2004

Contextual Info: DIM600BSS12-E000 DIM600BSS12-E000 Single Switch IGBT Module Replaces issue September 2003, version PDS5651-2.0 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand PDS5702-1.2 January 2004

DIM1600NSM12-E000

Contextual Info: DIM1600NSM12-E000 DIM1600NSM12-E000 Single Switch IGBT Module Replaces April 2004 version, issue PDS5756-1.0 FEATURES PDS5756-2.0 June 2004 • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses KEY PARAMETERS VCES typ VCE(sat) *

Contextual Info: DIM100CHS12-E000 DIM100CHS12-E000 Half Bridge IGBT Module PDS5682-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

Contextual Info: DIM50CHS12-E000 DIM50CHS12-E000 Half Bridge IGBT Module PDS5712-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max) IC

Contextual Info: DIM200WHS12-E000 DIM200WHS12-E000 Half Bridge IGBT Module PDS5684-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

DIM200WHS12-E000

Contextual Info: DIM200WHS12-E000 DIM200WHS12-E000 Half Bridge IGBT Module PDS5684-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

1.2397

Abstract: DIM400WHS12-E000 4800A
Contextual Info: DIM400WHS12-E000 DIM400WHS12-E000 Half Bridge IGBT Module PDS5664-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

Contextual Info: DIM400WHS12-E000 DIM400WHS12-E000 Half Bridge IGBT Module PDS5664-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

Contextual Info: DIM300WHS12-E000 DIM300WHS12-E000 Half Bridge IGBT Module PDS5685-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

1.2397

Contextual Info: DIM400BSS12-E000 DIM400BSS12-E000 Single Switch IGBT Module PDS5705-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

DIM100WHS12-E000

Abstract: DYNEx PDS5710-1
Contextual Info: DIM100WHS12-E000 DIM100WHS12-E000 Half Bridge IGBT Module PDS5710-1.1 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)