DH71067 Search Results

Contextual Info: TUNING VARACTOR High Q silicon abrupt junction tuning varactor HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR VBR 30 V Description This series of high Q epi-junction microwave tuning varactors 30 V incorporates a passivated mesa technology. It is well suited for frequency tuning applications up to Ku band.

Contextual Info: TUNING VARACTOR Plastic package Surface Mount Silicon abrupt tuning varactor SOT23 SURFACE MOUNT SILICON ABRUPT TUNING VARACTOR Description This series of silicon tuning varactors have an epitaxial mesa design with a high temperature passivation. This technology is used to produce abrupt tuning varactor in SOT23 package. This family

dh728

Abstract: DH71006 Tuning Varactors DH719 DH726 M208
Contextual Info: TUNING VARACTOR High Q silicon abrupt junction tuning varactor HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR VBR 30 V Description This series of high Q epi-junction microwave tuning varactors 30 V incorporates a passivated mesa technology. It is well suited for frequency tuning applications up to Ku band.

DH71000

Abstract: varactor diode capacitance range varactor DH71010 DH71030-70 tuning varactor
Contextual Info: TUNING VARACTOR Plastic package Surface Mount Silicon abrupt tuning varactor SOT23 SURFACE MOUNT SILICON ABRUPT TUNING VARACTOR Description This series of silicon tuning varactors have an epitaxial mesa design with a high temperature passivation. This technology is used to produce abrupt tuning varactor in SOT23 package. This family

dh718

Abstract: M208 F27D BH157
Contextual Info: TUNING VARACTOR High Q silicon abrupt junction tuning varactor HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR VBR 30 V Description This series of high Q epi-junction microwave tuning varactors 30 V incorporates a passivated mesa technology. It is well suited for frequency tuning applications up to Ku band.

Contextual Info: TUNING VARACTOR SOT23 surface mount silicon abrupt tuning varactor SOT23 surface mount silicon abrupt tuning varactor Features Description • High quality factor • Low leakage current • Passivated silicon mesa technology • Surface mount package •

sqm1150

Abstract: smd diode f54 sqm1250 DH60034 srd dh294 bh16 transistor step recovery diode dh252 temex DH252 M208 B1 DH294
Contextual Info: MICROWAVE SILICON COMPONENTS Contents MICROWAVE SILICON COMPONENTS CONTENTS CONTENTS w e N f o t i y Spir nolog Tech PAGE INTRODUCTION / SYMBOLS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2 All specifications contained in that catalog are subject to change without notice.

EH76150

Abstract: EH76150 die F27d x band varactor diode varactor KU BAND Dual Varactor Diode with Common Cathode DH76047-70 DH71030 varactor DH71067
Contextual Info: TUNING VARACTOR Selection guide TUNING VARACTOR Selection Guide PAGE SURFACE MOUNT SILICON ABRUPT TUNING VARACTOR 1-32 HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR - VBR = 30 V 1-34 - VBR = 45 V 1-35 SILICON HYPERABRUPT JUNCTION TUNING VARACTOR 1-36 MICROWAVE SILICON HYPERABRUPT JUNCTION TUNING VARACTOR