F27D Search Results

ge 6065 b

Abstract: GE 6065 AH370 AH682 AH443 Thomson ah370 AH655 AH612 ah616 AH610
Contextual Info: AH365.AH380/AH443.AH802 GaAs GUNN P O W E R G E N E R A T I O N D I O D E S FEATURES O perating fre q u e n c y range 8 to 100G H z Low noise c ha racte ristics from 8 to 100G H z C a s e s ty le fle x ib ility : W 2, W 3, W 4, W 5, F27d, F60 . Em itting p o w e r : 10 to 400 m W

diode cross reference

Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Contextual Info: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE

ci 740

Abstract: 1C45 DH744
Contextual Info: SILICON TUNING VARACTORS This series o f high Q epi-junction m icrow ave tuning varactors 45 V incorporates a passivated mesa tech n olog y. It is well suited for fre q u e n cy tuning a pp lica tio ns up to X band. CHIP AND PACKAGED DIODES CHIP OIODES TUNING RATIO

74008

Abstract: 74067 74004 74016 74220 c 74067 cI 74150 74470 ci 74390 74006
Contextual Info: •'<% SILICON TUNING VARACTORS / This series o f high tuning ratio e pi-ju nctio n m icro w a ve tuning varactors 90 V incorporates a passivated mesa te ch n o lo g y. It is well suited for fre q u e n cy tuning a p p lica tio n s up to L b an d . CHIP AND

Contextual Info: SILICON PIN DIODES Microwave applications ULTRAFAST SWITCHING SILICON PIN DIODES Description For ultrafast switching, these passivated mesa diodes have a thin I layer < 10 µm . Electrical characteristics CHIP AND PACKAGED DIODES CHIP DIODES Characteristics Gold Breakdown Junction

018pF

Contextual Info: POWER GENERATION DIODES Step recovery diodes SRD STEP RECOVERY DIODES (S.R.D.) Description These diodes use mesa technology and oxide passivation. They support fast switching and multiplier applications: • very short pulse generation, • ultra fast waveform shaping,

DH292

Contextual Info: POWER GENERATION DIODES Silicon multiplier varactor SILICON MULTIPLIER VARACTORS Description These silicon multiplier varactors from 0.2 to 25 GHz are designed for harmonic generation of high power levels (stack configuration) and/or at high multiplication orders.

RSF 800

Abstract: F27D EH50151 DH50204 EH50204 DH50156 M208
Contextual Info: SILICON PIN DIODES Microwave applications FAST SWITCHING SILICON PIN DIODES Description For fast switching, these passivated mesa diodes have a medium I layer < 50 µm . Electrical characteristics CHIP DIODES L CHIP E AND C PACKAGED T R IDIODES C A E Characteristics Gold Breakdown Junction

STEP RECOVERY DIODES

Abstract: EH542 EH546 Dh54 A22E M208
Contextual Info: POWER GENERATION DIODES Step recovery diodes SRD STEP RECOVERY DIODES (S.R.D.) Description These diodes use mesa technology and oxide passivation. They support fast switching and multiplier applications: • very short pulse generation, • ultra fast waveform shaping,

DH294

Abstract: DH200 DH270 DH256 Dh252 varactor multiplier dh110 DH292 DH293 M208B
Contextual Info: POWER GENERATION DIODES Silicon multiplier varactor SILICON MULTIPLIER VARACTORS Description These silicon multiplier varactors from 0.2 to 25 GHz are designed for harmonic generation of high power levels (stack configuration) and/or at high multiplication orders.

chip varactor

Abstract: EH76150 varactor KU BAND EH76033 EH76015
Contextual Info: TUNING VARACTOR High Q silicon hyperabrupt junction tuning varactor HIGH Q SILICON HYPERABRUPT JUNCTION TUNING VARACTOR Description This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate a passivated mesa technology. Packaged or chip devices are available for linear electronic tuning from

bh32

Abstract: bH-36 M208D BMH76 M208A BH158AM BH147
Contextual Info: MICROWAVE SILICON COMPONENTS Case styles CASE STYLES SURFACE MOUNT DEVICES GENERAL PURPOSE STRIP LINE / M ICRO STRIP A22e SMD3 BH15 BH28 SMD4 BH16 BH32 SMD6 BH36 BH35 SMD8 BH100 BH142a SOD323 BH101 BH142b SOT23 BH143 BH142c SOT143 BH146 BH147 BH142d POWER

BH204N

Abstract: BH403a M208D BH198 BH202N M208A
Contextual Info: MICROWAVE SILICON COMPONENTS Case styles CASE STYLES SURFACE MOUNT DEVICES GENERAL PURPOSE STRIP LINE / MICRO STRIP PAGE PAGE PAGE A22e .12-48 SMD3 .12-56 BH15 .12-48 BH28 .12-48

DH80050

Abstract: DH80055-20 DH80050-40N DH80050-01 DH80055-20N DH80050-06N DH80080 DH80055 dh80082-06 DH80082-06N
Contextual Info: Silicon Pin Diodes Switching Pin Diodes SWITCHING PIN DIODES Breakdown Voltage Vbr @ Ir = 10 A V Serie Resistance Rs @ F= 120 MHz Ω Capacitance @ F= 1 MHz Application pF Min. Typ. Max. @ Vr = 50V Package 1 Part Number Max. @ IF=200mA Min (µs) 500 High Power Switching

power 22E

Contextual Info: Typical applications of step recovery diodes include oscillators, power transmitter and drivers, for telecommunications, telemetry, radar and test equipment. In choosing an SRD, the significant characteristics include : O utput Frequency f0 ; Breakdown Voltage (VBR) ; Junction C apacitan ce (C j) ; Minority Carrier

Contextual Info: SILICO N LIMITER PIN DIODES These passivated mesa PIN diodes have a thin I layer. This series of diodes is available as chips and in hermetic ceram ic packages. They operate as power dependent variable resistances and provi­ de passive receiver protection low noise amplifiers, mixers, and detectors ,

Contextual Info: TUNING VARACTOR High Q silicon abrupt junction tuning varactor HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR VBR 30 V Description This series of high Q epi-junction microwave tuning varactors 30 V incorporates a passivated mesa technology. It is well suited for frequency tuning applications up to Ku band.

M208

Contextual Info: TEKELEC COMPONENTS bflE '10G37Ô7 000G232 3fl2 D PIN DIODES SILICON LIMITER PIN DIODES These passivated mesa PIN diodes have a thin I layer, This series of diodes is available as chips and in hermetic ceram ic packages. They operate as power dependent variable resistances and provide

dh728

Abstract: DH71006 Tuning Varactors DH719 DH726 M208
Contextual Info: TUNING VARACTOR High Q silicon abrupt junction tuning varactor HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR VBR 30 V Description This series of high Q epi-junction microwave tuning varactors 30 V incorporates a passivated mesa technology. It is well suited for frequency tuning applications up to Ku band.

dh200

Abstract: DH294 Dh252 DH270 f60D
Contextual Info: POWER GENERATION DIODES Silicon multiplier varactor SILICON MULTIPLIER VARACTORS Description These silicon multiplier varactors from 0.2 to 25 GHz are designed for harmonic generation of high power levels (stack configuration) and/or at high multiplication orders.

M208A

Abstract: BMH76
Contextual Info: MICROWAVE SILICON COMPONENTS Case styles CASE STYLES SURFACE MOUNT DEVICES GENERAL PURPOSE STRIP LINE / MICRO STRIP PAGE PAGE PAGE A22e .12-48 SMD3 .12-56 BH15 .12-48 BH28 .12-48

STK 2028

Abstract: HW 2596 STK 1262 stk 1264 FDCC 1602 stk 2265 F199 transistor TSX 07 31 1622 transistor f423 F487 transistor
Contextual Info: Fri Jan 13 13:20:54 1995 Page 1 'W65C134 Internal ROM Monitor $F000 ' 'MON7.ASM - GENERAL LOOKUP TABLES' 2500 A.D. 65816 Macro Assembler - Version 5.01g -Input Filename : IMON.ASM Output Filename : IMON.OBJ 1

MVP-100

Abstract: ROE EB STDX 8000 4614 inverter driver d947 DC-418 DSP56156 C-15 DSP56004 DSP56100
Contextual Info: TABLE OF CONTENTS Paragraph Number Title Page Number SECTION 1 DSP56156 OVERVIEW 1.1 1.2 1.2.1 1.2.2 1.2.3 1.2.4 1.2.5 1.2.5.1 1.2.5.2 1.2.5.3 1.3 1.4 1.4.1 1.4.2 1.4.3 1.4.4 1.4.5 1.5 1.6 1.6.1 1.6.1.1 1.6.1.2 1.6.2 1.6.2.1 1.6.2.2 1.6.2.3 1.6.3 1.6.3.1 INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

73016

Contextual Info: * SILICON TUNING VARACTORS This series of high tuning ratio epi-junction microwave tuning varactors 60 V incorporates a passivated mesa technology. It is well suited for frequency tuning applications up to C band. CHIP AND CHIP DIODES PACKAGED DIODES (1)