EH50156 Search Results

RSF 800

Abstract: F27D EH50151 DH50204 EH50204 DH50156 M208
Contextual Info: SILICON PIN DIODES Microwave applications FAST SWITCHING SILICON PIN DIODES Description For fast switching, these passivated mesa diodes have a medium I layer < 50 µm . Electrical characteristics CHIP DIODES L CHIP E AND C PACKAGED T R IDIODES C A E Characteristics Gold Breakdown Junction

M208

Contextual Info: SILICON PIN DIODES Microwave applications Fast switching silicon PIN diodes Description For fast switching, these passivated mesa diodes have a medium I layer < 50 µm . Electrical characteristics CHIP DIODES E L CHIP E AND C PACKAGED T R IDIODES C A Characteristics Gold Breakdown Junction

sqm1150

Abstract: smd diode f54 sqm1250 DH60034 srd dh294 bh16 transistor step recovery diode dh252 temex DH252 M208 B1 DH294
Contextual Info: MICROWAVE SILICON COMPONENTS Contents MICROWAVE SILICON COMPONENTS CONTENTS CONTENTS w e N f o t i y Spir nolog Tech PAGE INTRODUCTION / SYMBOLS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2 All specifications contained in that catalog are subject to change without notice.

Contextual Info: SILICON PIN DIODES Microwave applications FAST SWITCHING SILICON PIN DIODES Description For fast switching, these passivated mesa diodes have a medium I layer < 50 µm . Electrical characteristics CHIP DIODES L CHIP E AND C PACKAGED T R IDIODES C A E Characteristics Gold Breakdown Junction