DF RV TRANSISTOR Search Results

2SB810

Abstract: JIS211 transistor C982 C382 n1j 048 ic 6116 IC 7824 ST
Contextual Info: V y □ > h 7 > y X ^ Silicon Transistor 2SB810 P N P x \£ 2 * 4$ V y ' j a > h 7 > v X 5 f *M $ B I « # t : mm * - b v h x H ï îfiO i£ J B  lÜ * f fl,  * Œ * * 3 t Sg » 0> * - * K 7 -T 7 , * <& {*#» K 5 < O ig h F E T 4 .0 ± 0 .2 U T ftiS T T o

TL08 015

Abstract: C14A 2SK277 2SK278 T108 T460
Contextual Info: NEC Aj i ï T / \ f smm&wjgk '<*7— b mo M O S Field Effect Pow er Transistor z 2SK277,278 f e t x i f f l N-channel Power MOS FET High Speed Switching Industrial Use ^ ^ 0 / PACKAGE DIMENSIONS 2SK277,278Ü, S itE E w N * + * / i;IK ^ 'f'7 - M O S FET t*. f é *

Contextual Info: INSTR b2 -COPTO} DE JfiTLlTHb 0 0 3 7 Q S 3 S TEXAS INSTR OPTO ¿2C 37053 D TIPL760, TIPL760A, TIPL761, TIPL761A N-P-N SILICON POWER TRANSISTORS 1~~ 3 2 - 1 2 REVISED OCTOBER 1984 • 8 0 W /1 0 0 W a t 2 5 ° C Case Temperature • 4 A Continuous Collector Current

lp 7979

Abstract: 9T TRANSISTOR 2SK2090 marking jep diode RFT M-1
Contextual Info: h > v x $ M O S Field Effect Transistor 2SK2090 N ^ ^ I/M ÿ O S F E T 2SK20901Î2.5 V iE fil* < 7°C0N^ + * ; U » M O S FET ÜMft : mm T i g l i T '§ , * » o K < f c f - Is tts J :i/ t f - r # ^ ^ 4# • « y - h $ 2 .5 V T i Ê Ü T ÿ ^ o • ¡ÜÀ^-f >\^-^>X(DtzSb, HZIif >7(ï£ # Jt t $ #

37044

Abstract: TIPL757
Contextual Info: TEXAS INSTR ÌOPTO> b2 DF|ùTt.l75t. 0037043 2 8961726 TEXAS INSTR OPTO 62C 37043 TIPL757, TIPL757A N-P-N SILICON POWER TRANSISTORS REV ISED O CTOBER 1984 T - 33-/5“ 20 0 W a t 2 5 ° C C ase Temperature 15 A Continuous Collector Current 25 A Peak Collector Current

transistor 7830

Abstract: D1488 2sk679 2SK679A TRANSISTOR TT 2190 I-D05 TA-75 transistor M 7830
Contextual Info: z r — $ • y — h h 7 > v 7 i ! 2SK679A MOS Field Effect Transistor MOS FET 2SK679A !i, i N *-*;H fé M O S z u F E T T*. 5 V * j I 3 U C £O tf}* * 4 "si-> r r ' < ^ x t t 0 :* V iK ^ '- iS < , i- ? , T ? & 1 -^ -9 f?60 K 7 -f r i C ^ i i S T ' t o

c185 transistor

Abstract: 2SK293 3e tRANSISTOR K293A 8115, transistor C14A k293 2SK293A T108 TS33
Contextual Info: NEC j m + T / Y t x $ s i j u > s < r7 — Y 7 .9 S ilico n P o w e r T ra n s is to r A 2SK293,293A FET ¡S liJE iM J S ^ f S a f e X 'r N-channel M O S Field Effect Pow er Transistor High Voltage, High Speed, High Current Switching High Reliavility Industrial Use

d00030

Abstract: 2SA1741 T108 BH RV transistor
Contextual Info: / n° 7 - Silicon P o w er Transistor 2 S A 1 7 4 1 I i f f l 2 S A 1 74 1 ^ T L o w V C E s a t T ' h p E 3- — 9 < T ) t '< i: tz ' - t 'C O W ^ ^ iO L T ^ S T 'D L T H C / D J ê C a ê t i ^ ^ ^ h ' s 9 ÿ > v ? X * ? T ? t j fl- J fê y - 10.0 + 0 .3

2SK992

Abstract: U71E 720-ES RXSU 4 T108 T460 332h tt 22
Contextual Info: MOS Field Effect Pow er Transistor 2SK992 MOS F E T j i m 2SK992 Ü , m FET f , 5 V ifiJ^ IC iotbi i i z i è H fë m ib W fiè & îïïim z a -y - f> < , * y v / ' f K, 7 X A "/ f - > r w t t t f ililT ft» x t- t. & £ £ > , t - IM S : mm 10.5 MAX.

D1351

Abstract: 2SA1175 TRANSISTOR 2SA1175 2SA11 2sa1175 transistor
Contextual Info: v 1J Z ] > Silicon Transistor 2 «1 S A 1 1 7 : mm ft o M i i a u i M i * * * * <, cnr^i t o2S C 2785t 3 > 7 U y 7 To 2 .0±0.2 4.0±0.2 6* 6* CM N. .*) 6* M4 6* (T a = 25 *C) « * * * * £ » m i # 0 .5 * § z\ \s 0 $ • 'K - * M |BJ * E £ # $ VCBO *

2N2160

Contextual Info: TYPES n 2N2160 P-N BAR-TYPE SILICON UNIJUNCTION TRANSISTORS B U L L E T I N N O . D L S 68318 9, O C T O B E R 1 9 6 2 - R E V I S E D M A Y 1968 Designed for Medium-Power Switching, Oscillator and Pulse Timing Circuits • Highly Stable Negative Resistance

lt 5217

Abstract: ic op 5218 IP626 T1P62 T1P620
Contextual Info: TEXAS INSTR ÎOPTOJ 8961726 TEXAS IN STR 62C <OPTO> 36958 TIP620, TIP621, TIP622 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D r R EV ISED O CTOBER 1984 • Designed For Complementary use with TIP625, T IP626, TIP627 • 65 W at 2 5 ° C Case Temperature

Contextual Info: IStanford Microdevices Product Description SNA-600 Stanford M icrodevices’ SNA-600 is a high-perform ance GaAs Heterojunction Bipolar Transistor MMIC in die form. A Darlington configuration is utilized for broadband perfor­ mance to 6.5 GHz. DC-6.5 GHz, Cascadable

Contextual Info: TEXAS INSTR - COPTO} 8961726 TEXA S ^2 IN S T R DE <OPTO> 0D37D‘ìl f 62C 3 7 0 9 1 TIPL774 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTOR OCTOBER 19 8 2 - R EV ISED O CTOBER 1984 20 A Continuous Collector Current T -3 3 -2 9 150 W at 5 0 °C Case Temperature

K1282

Abstract: 2SK1282 TEA-509
Contextual Info: m os M O S Field Effect P o w e r Transistors /< 7 -M O S 2 S K 1 2 8 2 / 1 2 8 2 -7. ü , MOS F E T f , -h m m f r » m 5 V ^ il£ * t ü ï ï m * < IC £ 0 I -> + > / r H\ fjjò . - t - 7 . * < , -f > r m i . U y u / < K, 7 iit t i'ó - V GS - ^ 1 s — 0

transistor DK qj

Abstract: JKS-45 SE-49
Contextual Info: 5 s— S 7 • 5 /— h Compound Transistor BN1L3N 4# $ fB iU « ^ - j ì '. mm 2.0 + 0.2 0 '< - f T x f f i i a è r t J l L T ^ É l ' o f ( R i = 4.7 k£2, R 2= 10 k£2) 4— 6‘ o 2 4k1 =i > V" >J 9 > 9 'J o BA 1L3N £ (T II a Tè £t = 25 °C ) @

IC TC 3588

Abstract: 2SA140 C3588
Contextual Info: ' > 1j I ] > Silicon Transistors 2 S A 1 4 0 0 , 1 4 0 0 -Z # 1L n m m i t o f l i i t E E T " "t'o o a V CE0= — 400 • m m V 2SA 1400 u ? j'f à m W . B . f r 'b Z '* '* V c E s a t)^ - l-0 V 2 .3 + 0 .2 t f ^ l . O ¿¿s 0 .5 + 0 .1 O 2SC 3588, 2 S C 35 88 -Z t

2SA1871

Abstract: 2SC4942 TC789
Contextual Info: — S 7 • 5/— h '> U =3 > h^ Silicon Transistor 2SC4942 N P N = Ü £ t m S ' y =1 v h ^ r s jîf fiÎ/ d E - X ' ' f 2SC4942 i B i i Î J Î S W Œ X ^ f- > ?" • l^ — ^ -y^f X ^ 'y -y ( W i • m m D C / D C ^ > '< — ? & t * 6 D X ' f ' y ^ >

IC-8844

Abstract: PA670 PA670T SC-70A
Contextual Info: "t — ^7 • f y — h v ' J h ^ > V X ^ Silicon Transistor = I > UPA670T N P N X t f t $ r d e '> 77; ^ V ,; = l > h 7 > v x ^ 6 f c f > 2 l§ IS & juPA670T t t , h 7 > V X £ i 2[SS£p*3j& U tz 5. - =E- Jl> K f / w z - r & y , ( U f i : •■ m m )

AWB2528-1423GB

Abstract: AWB2528-1508-GB AWB2528-1508GB EASY820-DC-RC EASY819-AC-RC moeller EASY512-AC-R IEC 60068-2-31 EASY819-AC-RC easy620-dc-te EASY618-AC-RE moeller
Contextual Info: I04_062-063_e_G.fm Seite 62 Freitag, 6. August 2004 1:08 13 4/62 Technical Data easy Control Relays Moeller HPL0211-2004/2005 easy Control Relays, MFD EASY200-EASY EASY202-RE General technical data Standards Dimensions W x H x D Weight Mounting mm kg EASY512-.

a935

Abstract: 2sk2136 V01J 2SK2136-Z MP-25 MP-25Z T0220AB
Contextual Info: M O S J fê S fM â */ N°7 - MOS MOS Field Effect Power Transistors 2 S K 2 1 3 6 . 2 S K 2 1 3 6 FET * -T -y * > 2SK2136, 2 S K 2 1 3 6 - Z U N ^ * * J U « £ f f ^ 7 - M O S F E T T 2SK2136 * > 7 * Ä * > D C - D C 3 > /< - - * lC Ä f iT T o COI o 10.6_MAX- ^ 3.6 ± 0.2 « M A X .

MC4044

Abstract: MC4344 MC1648 MC1648 "cross reference" TT 104 N 14 KOF KY A 934 G5-G12 MC7493 4024 vco Motorola 4044
Contextual Info: MC4344 MC4044 MOTOROLA PHASE-FREQUENCY DETECTOR PHASE-FREQUENCY DETECTOR The MC4344/4044 consists o f tw o digital phase detectors, a charge pump, and an amplifier. In combination w ith a voltage controlled m ultivibrator such as the MC4324/4024 or MC164S ,

i951

Contextual Info: 1DI5OE-12OÍ50A : Outline Drawings POW ER T R A N S IS T O R M O D U L E : Features • iSiWŒ High Voltage • 7'J — KrtSE • A S O A 'T S l' • Including Free W heeling Diode rV \^ Excellent Safe Operating Area IMS Insulated Type A p p lic a tio n s

4-bit full adder using nand gates and 3*8 decoder

Abstract: gec plessey ula df69 DF Series DF-Series 1.8 GHz direct frequency vco with cad assessment df83 30DF1 T3265 filter for GPS spice
Contextual Info: S i GEC PLESSEY S E M I C O N D U C T O R S DS2312-3-1 ULA DF SERIES HIGH PERFORMANCE MIXED DIGITAL/ANALOG ARRAY FAMILY S u p e rs e d e s J u n e 1990 ed itio n The D F series of arrays is designed to provide cost effective single chip solutions to high speed combined digital and analog