DEVICE MARKING 313 Search Results

bc490

Abstract: bc490a
Contextual Info: BC490, BC490A, BC490B High Current Transistors PNP Silicon • Device Marking: 490 Device Marking: 490A Device Marking: 490B http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO −80 Vdc Collector-Base Voltage

Contextual Info: SIEMENS Silicon Schottky Diode B A T 62 • Low barrier diode for detectors up to GHz frequencies. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel BAT 62 62 Q62702-A971 Pin Configuration

Q62702-A4

Abstract: diode code 6_8 marking 7S sot 23 x 316 diode code ae
Contextual Info: SIEM EN S Silicon Schottky Diodes BAT 68 • For mixer applications in the VHF/UHF range • For high-speed switching ESD: Electrostatic discharge sensitive device, observe handling precautions! Marking Ordering Code Pin Configuration Type Package1 tape and reel)

408-7424

Abstract: pa 17105-3608 Tyco Electronics Instruction Sheet 408-7424 instruction sheet 408-7424 Terminal crimping training crimp 408-7424 tyco 17105-3608 CRIMPING 68321-1
Contextual Info: Instruction Sheet 408-2681 ROTA-CRIMP* Crimping Tool 68321-1 Locator Pin Indexing Stationary Die Pin Nest Anvil Die Wire Size Marking Hold-Down Device 08 SEP 08 Rev B anvil must be set to the wire size being used. The applicable wire size is stamped on the base of the

FDP020N06

Abstract: micro solar inverters Mosfet application note fairchild FDP020N06B 48V kW battery charger
Contextual Info: FDP020N06B_F102 N-Channel PowerTrench MOSFET 60V, 313A, 2m Features Description • RDS on = 1.65m ( Typ.) at VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored

Contextual Info: FDP020N06B_F102 N-Channel PowerTrench MOSFET 60V, 313A, 2m Features Description • RDS on = 1.65m ( Typ.) at VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored

Contextual Info: Crystal oscillator CRYSTAL OSCILLATOR HIGH-STABILITY TCO-3131 • Frequency range • Supply voltage • Frequency stability • Features : : : : • Function • Lead Pb -free : : 60 MHz to 700 MHz 3.3 V ±30 x 10-6 / -40 to +85 °C With HFF-XTAL technology

Contextual Info: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com

Contextual Info: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com

Contextual Info: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com

4P0413

Abstract: 2101-7R 4-P-04 IPD50P04P4-13 IPD50p04 IPD50P04P4 IPD50P04P413
Contextual Info: IPD50P04P4-13 Type OptiMOS -P2 Power-Transistor Product Summary Package V DS -40 V R DS on 12.6 mW ID -50 A Marking Features • P-channel - Normal Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature

FDP020N06

Contextual Info: FDP020N06B_F102 N-Channel PowerTrench MOSFET 60 V, 313 A, 2 mΩ Features Description • RDS on = 1.65 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

Contextual Info: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com

PBA31308

Abstract: PBA 31308 T8753 Infineon Specific HCI Commands bluetooth LDA312G7313F-237 Infineon_Specific_HCI_Commands LGA voiding T8753-2 BST-2450 2450 MHz low noise amplifier MWO circuit
Contextual Info: eUniStone BlueMoon Universal Platform Embedded PBA 31308/2, Version 1.11 User’s Manual Hardware Description Revision 1.1, 2010-04-15 Wireless Solutions Edition 2010-04-15 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG

PBA31308

Abstract: T8753 Infineon Specific HCI Commands bluetooth CVSD in matlab PBA31308/2 T8753-2 INFINEON trace code label PBA 31308 INFINEON LOT NUMBER code label e5 user manual
Contextual Info: January 2009 PBA 31308/2 V1.01 B l u e M o o n TM U n i v e r s a l P l a t f o r m eUniStone eUniStone PBA 31308/2 , Version 1.01 Preliminary User’s Manual Hardware Description Revision 1.0 Wireless Solutions PBA31308/2 User's Manual Hardware Description downloaded by Annakarin Ericson (Infineon Technologies Sweden) at 22 Jan 2009 11:02

Contextual Info: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com

Contextual Info: NSTS9103-E Oct. 2013 NewJRC SAW FILTER NSTS9103 Application 313.85MHz R.K.E. Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Item Spec. Typ. Input and Output Impedance

Contextual Info: NSTS9013-E Apr. 2013 NewJRC SAW FILTER NSTS9013 Application 313.85MHz R.K.E. Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Item Spec. Typ. Input and Output Impedance

Contextual Info: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com

IC 3130

Abstract: 4110 P525 Q62702-P5250 GEOY6976
Contextual Info: Fotodarlington Transistor im Sidelooker-Gehäuse Photodarlington Transistor in Sidelooker-Package SFH 3130 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik

Contextual Info: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com

dac72 burr brown

Contextual Info: COMPONENTS BURR-BROUN CORP _ H E D 117 313 15 POlSSClt. U I _ ~T-,r i- o tM W DAC702SH/883B REVISION NONE FEBRUARY, 1989 Monolithic 16-Bit DIGITAL-TO-ANALOG CONVERTER FEATURES • FULLY COMPLIANT MIL-STD-883 PROCESSING • MONOLITHIC CONSTRUCTION

Contextual Info: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com

Contextual Info: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com