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    FDP020N06 Search Results

    FDP020N06 Datasheets (2)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDP020N06B_F102
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 120A TO-220-3 Original PDF 9
    FDP020N06B-F102
    		ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO-220-3 Original PDF 781.73KB
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    FDP020N06 Price and Stock

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    onsemi FDP020N06B-F102

    Trans MOSFET N-CH Si 60V 313A 3-Pin(3+Tab) TO-220AB Tube
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    Verical FDP020N06B-F102 800 800
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    Avnet Americas FDP020N06B-F102 Tube 43 Weeks 800
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    • 1000 $2.93
    • 10000 $2.84
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    Mouser Electronics FDP020N06B-F102 456
    • 1 $7.02
    • 10 $3.78
    • 100 $3.46
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    Newark FDP020N06B-F102 Bulk 100
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    Onlinecomponents.com FDP020N06B-F102
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    Rochester Electronics FDP020N06B-F102 879 1
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    TME FDP020N06B-F102 1
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    Avnet Silica FDP020N06B-F102 44 Weeks 50
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    EBV Elektronik FDP020N06B-F102 45 Weeks 50
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    Fairchild Semiconductor Corporation FDP020N06B

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    Bristol Electronics FDP020N06B 200 1
    • 1 $4.56
    • 10 $2.96
    • 100 $2.14
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    Quest Components () FDP020N06B 160
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    FDP020N06B 160
    • 1 $6.00
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    • 100 $2.80
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    ComSIT USA FDP020N06B 90
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    Fairchild Semiconductor Corporation FDP020N06B_F102

    Trans MOSFET N-CH Si 60V 313A 3-Pin(3+Tab) TO-220AB Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics FDP020N06B_F102 195 1
    • 1 $4.56
    • 10 $2.96
    • 100 $2.14
    • 1000 $2.05
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    Quest Components () FDP020N06B_F102 156
    • 1 $7.20
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    FDP020N06B_F102 156
    • 1 $6.00
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    FDP020N06 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDP020N06B N-Channel PowerTrench MOSFET 60 V, 313 A, 2 mΩ Features Description • RDS on = 1.65 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		fdp020n06b PDF

    FDP020N06

    Contextual Info: FDP020N06B_F102 N-Channel PowerTrench MOSFET 60 V, 313 A, 2 mΩ Features Description • RDS on = 1.65 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		fdp020n06 PDF

    FDP020N06

    Abstract: micro solar inverters Mosfet application note fairchild FDP020N06B 48V kW battery charger
    Contextual Info: FDP020N06B_F102 N-Channel PowerTrench MOSFET 60V, 313A, 2m Features Description • RDS on = 1.65m ( Typ.) at VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored


    Original     		fdp020n06micro solar invertersmosfet application note fairchildfdp020n06b+148v kw battery charger PDF

    Contextual Info: FDP020N06B_F102 N-Channel PowerTrench MOSFET 60V, 313A, 2m Features Description • RDS on = 1.65m ( Typ.) at VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored


    Original     		PDF