DESI 30 Search Results

Contextual Info: ^EDI EEH2AG27265V 1Megabyte Sync/Sync Burst, ^ ^ ^ ^ S m a ll Outline DIMM •ELECTRONIC DESI SMS, INC ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through • 2x64kx72 Synchronous, Synchronous Burst ■ Flow-Through Architecture • Sequential Burst MODE

Condor c-fi 30

Abstract: w33 transistor 2N3735 2N3737 2N3737JTX 2N3735J 2N3735JTX 2N3737J desi 30 2N3735 MOTOROLA
Contextual Info: MOTOROU Order this document by2N3735JT~ SEMICONDUCTOR TECHNICAL DATA o 2N3735JTX, JANS 2N3737JTX Processed per MIL4-I NPN Silicon Smal14ignal tlb ,11 9500/395 Transistors . . .deeigned for genera~urpoee switching and amplifier applications. 2N3737 is Not Recommended for New Desi$#$+;’

AD8367

Abstract: "Fixed Gain Amplifiers" base station power amp IS-136 Analog Voltage Variable Attenuator base station high power amplifier superheterodyne receiver WCDMA
Contextual Info: INTEGRATED VGA DESI Integrated VGA Aids Precise Gain Control g An integrated VGA circuit with fixed-gain amplification and variable attenuation is useful for power leveling in both receivers and transmitters, even at high intermediate frequencies. ain control is necessary in mobile-communications systems

BATERY protection

Abstract: FDY3000NZ SC89
Contextual Info: January 2007 FDY3000NZ tm DualN-Channel2.5V Specified PowerTrench“ MOSFET GeneralDescription Features Thi s Dual N-Channel MOSFET has been desi gned usi ng Fai rchi l d Semi conductor’ s advanced Power Trench process to opti mi ze the RDS ON @ VGS = 2.5v.

Contextual Info: SGS-THOMSON TDA4601 SWITCH-MODE POWER SUPPLY CONTROLLER LOW START-UP CURRENT DIRECT CONTROLOFSWITCHING TRANSIS­ TOR COLLECTOR CURRENT PROPORTIONAL TO BASE-CURRENT INPUT REVERSE-GOING LINEAR OVERLOAD CHA­ RACTERISTIC CURVE DIP 9+9 DESCRIPTIO N SIP-9 The TDA4601 is a monolithic integrated circuit desi­

magnetek power supply

Abstract: MODULAR POWER SUPPLY
Contextual Info: SFB Standard Full Brick Family f% 0 MagneTek Êb w B s The SFB Converter Module series is yet another part of the MagneTek family of Advanced Modular Power Supply components. Featuring high reliability, the SFB Modules are desi­ gned to reduce product development time and

2N3019-2N3020

Contextual Info: SGS-THOMSON R!tlD EæilLI(g'iri iD(SS 2N3019 2N3020 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS D E S C R IP T IO N The 2N3019 and 2N3020 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, desi­ gned for high-current, high-frequency amplifier ap­

clock generator using ic 555

Abstract: 48008 SO 8 PLL52C61
Contextual Info: fax id: 3529 PRELIMINARY - AlWAV J&r- CY2961 C * Y P R T T C ! V —•' .1 i X i ±._i:fc Pentium and Cyrix Compatible Clock Synthesizer/Driver with SDRAM Support • I mproved out put drivers are desi gned for l ow EMI Feat u res • Test mode support

4914B

Abstract: LC7582E AR05 lf LC7582 sanyo lc7582 J156 7582E C104 LC7582W SQFP64
Contextual Info: Ordering num ber: EN 2290C CMOS LSÌ LC 7582,7582E,7582W NO.2290C SM YO fcCD Driver j O v e rvie w The LC7582,7582E,7582W is a general-purpose LCD driver desi g n ^ |ffo r .jJS ^ n ç |c tro n iç tuning frequency display or microcomputer-controlled system applications,

tl4941

Abstract: tl494 for Push-Pull TL494 tl494 converter tl494 adjustable Power Supply TL494 tl494 master slave TL494DP TL494DG TL494 pin diagram
Contextual Info: THOMSON SEMICONDUCTORS TL494 TL494I PULSE W ID TH M O DULATIO N CONTROL CIRCUIT PULSE W ID T H M O DULATIO N CONTROL CIR C U IT T h e TL494 is a fixed frequency, pulse w idth m odulation control circuit desi­ gned primarily fo r S w itchm ode pow er supply control.

Contextual Info: DESI R ADI A L L SMA LATCHING TRANSFER Page 11 2 SWITCH OPTIONS: H F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE : 0 - 18 GHz : 50 Ohms 8 -12.4 12.4- 18 0 - 3 3 - 8 1.20 1.30 1.40 1.50 0.20 dB 0.30 dB 0.40 dB 0.50 dB >= 80 dB 70 dB 65 dB 60 dB AVER. POWER #

diagram for test ic 8873

Abstract: OF 8 pin DIP IC 1251 8s083 TP7600 OF 8 pin DIP IC 1251 742 national semiconductor thyristor 8873 circuit diagram s08 1251
Contextual Info: T e MIC U490B Se m i co n ü u c tors One-Shot Phase Control Description The monolithic integrated bipolar ciircuit, U490B, is a one-shot power control circuit, desi<^ned to control the thyristor which is mainly used in elec trie stapler devices, The IC is preferred to realise a one- shot phase control,

dbaa

Abstract: ISL9000 ISL9000IRMGZ ISL9000IRMMZ ISL9000IRMNZ ISL9000IRNCZ ISL9000IRNFZ ISL9000IRNJZ ISL9000IRNNZ
Contextual Info: ISL9000 GN S DESI T W E N R FO R T PA NDED LACEMEN E M M P RECO NDED RE 0A Data Sheet NO T E M 9 M ISL RECO March 11, 2008 FN9217.4 Dual LDO with Low Noise, Very High PSRR and Low IQ Features ISL9000 is a high performance dual LDO capable of sourcing 300mA current from each output. It has a low

Contextual Info: TABLE 1 CA RD "A " -0 1 -0 2 .042 [1.07] .072 [1.83] TH I S DESI GN H AS NOT BEEN AP P ROVED BY ENGI NEERI NG DO NOT DI STRI BUTE TH I S P RI NT TABLE 2 No OF POS POSITIONS POLARIZED -05 -08 -20 -30 -40 -50 -60 -70 3, 4 5, 6 15, 16 21, 22 31, 32 41, 42 31, 32, 63 & 64

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 3 RELEASED FOR PUBLICATION R E V IS IO N S ALL RIGHTS RESERVED. BY 1VCO ELECTRONICS CORPORATION. DESI GNED EE R RG-188/U CABLE ENTRY USE A, WITH 00 P LTR DESCRIPTION B CABLE REV PE R ECO DATE DWN 3/12/2007 0 7 -0 0 4 7 1 0

Contextual Info: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. COPYRIGHT LOC DIST GP 00 R E V IS IO N S LTR A NDTES: 1, UNLESS D T HE R WI S E RELEASED DATE DWN APVD 20A P R 06 RG SF SPECIFIED; PART NUMBER CHANGES AND DR DESI GN CHANGES A F F E C T I N G

115 vac 3 phase bridge rectifier

Abstract: DRA480
Contextual Info: DRA480 SERIES AC - D C D IN RAIL M O U N T A BLE P O W E R S U P P L Y IN D U STRIA L C O N T R O L E Q U IP M E N T FEATURES • ACTIVE PFC FUNCTION • PARALLEL FUNCTION SWITCH SELECTABLE • UNIVERSAL INPUTVOLTAGE • SELV COM PONENTS DESI • 3 YEARS WARRANTYG

aluminium capacitor Can D6.3 package

Abstract: nichicon LOT date code Nichicon WEEK CODE
Contextual Info: Spec. No. N E - 5 4 1 6 S P E C I F I C A T I O N 0 F ALUMINIUM ELECTROLYTIC HE DWG. No. Ser i es sheet 1 of 23 APPROVED 7? H010423F1 CHECKED 77, . DESI GENED REV. LET. LET. CAPACITORS REVISIONS DATE DR. CK. AP. x iic h ic o n 1. SCOPE This specification covers "HE series" miniature single-ended aluminum

159MHz

Abstract: BFR36
Contextual Info: 3QE » • 7^237 QDaD'îSS 1 ■ £ÿj SGS-THOMSON 'Tv £\-Z2> 0 [F il© [i[L [i© im « l_ B F R 3 6 S G S-THOMSON CATV ULTRA-LINEAR HIGH GAIN TRANSISTOR DESCRIPTION T h e B F R 36 is a multi-emitter silicon planar epitaxial N P N transistor in Jedec T O -3 9 m etal case. It is desi­

5050 rgb led

Abstract: CS1000 led 5050 rgb okamoto 1030
Contextual Info: LCD Module Technical Specification First Edition Nov 9, 2007 Final Revision * T-55226D043J-LW-A-AAN Type No. OPTREX CORPORATION A pproved : Shigeo S u z u k i - QU AL ITY A S S U R A N C E DIVISION- C hecked : T oshiyuki Okamoto - M O B I L E , C O N S U M E R M N D U S T R Y DESI GN DIV.

bfr18

Abstract: i237
Contextual Info: 3DE D rZ Z • 7 ti 2 ci 2 3 7 0030^51 1 ■ '"’’p is i S G S -T H O M S O N ^7# s H i T O ë * S B F R 18 S G S-THOMSON HIGH-VOLTAGE, HIGH-CURRENT AMPLIFIER DESCRIPTION The BFR18 is a silicon planar epitaxial NPN transis­ tor in Jedec TO-18 metal case. This device is desi­

Contextual Info: CF K GUETIG 11/17/2003 ECN-30430 TABLE 1 STYLE "A" ISSUE FOR REVIEW. TH I S DESI GN H AS NOT BEEN AP P ROVED BY ENGI NEERI NG DO NOT DI STRI BUTE TH I S P RI NT S A M TE C 5 2 0 P A R K E A S T B L V D , N E W A L B A N Y , IN 4 7 1 5 0 P H O N E : 8 1 2 .9 4 4 .6 7 3 3

Contextual Info: TH I S DESI GN H AS NO T BEEN AP P ROVED BY ENGI NEERI NG DO NOT DI STRI BUTE TH I S P RI NT TABLE 1 POSITIONS ROWS "A" "B" BODY 20 30 40 10 30 10 19 29 39 09 29 09 LGAF-20-10-XX LGAF-30-30-XX LGAF-40-10-XX S A M TE C 5 2 0 P A R K E A S T B L V D , N E W A L B A N Y , IN 4 7 1 5 0

Contextual Info: DESCRIPTION T h e C E N T R A L S E M I C O N D U C T O R CR3F Series types are Axial Lead Silicon Recti f i e r s desi g n e d for DC Power S u p p l y and Inverter a p p l i c a t i o n s w h e r e fast recovery times are needed. M A X I M U M RATI N G S