DDR CHANGE VOLTAGE Search Results
DDR CHANGE VOLTAGE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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DF2B20M4SL |
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TVS Diode (ESD Protection Diode), Bidirectional, +/-18.5 V, SOD-962 (SL2) | Datasheet | ||
DF2B6M4ASL |
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TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) | Datasheet | ||
DF2B7BSL |
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TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) | Datasheet | ||
DF2B5BSL |
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TVS Diode (ESD Protection Diode), Bidirectional, +/-3.3 V, SOD-962 (SL2) | Datasheet | ||
DF2S23P2FU |
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TVS Diode (ESD Protection Diode), Unidirectional, 21 V, SOD-323 (USC) | Datasheet |
DDR CHANGE VOLTAGE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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K4D28163HD-TC50
Abstract: K4D28163HD K4D28163HD-TC36 K4D28163HD-TC40 K4D28163HD-TC60
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K4D28163HD 128Mbit 16Bit K4D28163HD-TC36/40 4K/64ms 4K/32ms. K4D28163HD-TC36 275MHz) K4D28163HD-TC50 K4D28163HD K4D28163HD-TC36 K4D28163HD-TC40 K4D28163HD-TC60 | |
tc45 datasheetContextual Info: 128M DDR SDRAM K4D28163HD 128Mbit DDR SDRAM 2M x 16Bit x 4 Banks Double Data Rate Synchronous RAM Revision 1.0 December 2001 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 1.0 Dec. 2001 128M DDR SDRAM |
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K4D28163HD 128Mbit 16Bit K4D28163HD-TC45/55 K4D28163HD-TC33/36 66pin 65TYP 20MAX tc45 datasheet | |
K4D261638E-TC36
Abstract: K4D261638E-TC50 K4D261638 K4D261638E K4D261638E-TC33 K4D261638E-TC40
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K4D261638E 128Mbit 16Bit K4D261638E-TC33 260mA 320mA K4D261638E-TC36 250mA 310mA K4D261638E-TC50 K4D261638 K4D261638E K4D261638E-TC40 | |
Contextual Info: 256M DDR SDRAM K4D551638D-TC 256Mbit DDR SDRAM 4M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM Revision 1.0 February 2003 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 1.0 Feb. 2003 256M DDR SDRAM |
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K4D551638D-TC 256Mbit 16Bit K4D551638D-TC40 66pin 65TYP | |
K4D64163HF-TC40
Abstract: K4D64163HF K4D64163HF-TC33 K4D64163HF-TC36 K4D64163HF-TC50 K4D64163HF-TC60
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K4D64163HF 64Mbit 16Bit 66pin 65TYP 20MAX K4D64163HF-TC40 K4D64163HF K4D64163HF-TC33 K4D64163HF-TC36 K4D64163HF-TC50 K4D64163HF-TC60 | |
K4D261638E-TC36
Abstract: K4D261638E-TC50 K4D261638E K4D261638E-TC2A K4D261638E-TC33 K4D261638E-TC40
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K4D261638E 128Mbit 16Bit K4D261638E-TC2A K4D261638E-TC33 260mA 320mA K4D261638E-TC36 250mA K4D261638E-TC50 K4D261638E K4D261638E-TC40 | |
Contextual Info: Preliminary DDR SDRAM DDR SDRAM 512Mb D-die x8 512Mb D-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (400mil x 441mil) (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. |
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512Mb 400mil 441mil) | |
Contextual Info: DDR SDRAM 256Mb F-die x16 DDR SDRAM 256Mb F-die DDR SDRAM Specification 60 FBGA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, |
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256Mb | |
Contextual Info: Target 64M DDR SDRAM K4D64163HE 64Mbit DDR SDRAM 1M x 16Bit x 4 Banks Double Data Rate Synchronous RAM Revision 0.2 October 2001 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 0.2 Oct. 2001 Target 64M DDR SDRAM |
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K4D64163HE 64Mbit 16Bit K4D64163HE-TC33/36 66pin 65TYP | |
DDR266
Abstract: DDR333 DDR400
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512Mb 400mil 441mil) DDR266 DDR333 DDR400 | |
64Mb samsung SDRAM
Abstract: DDR333 DDR266
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256Mb 54pin 64Mb samsung SDRAM DDR333 DDR266 | |
DDR200
Abstract: DDR333 DDR400 K4H560838E 60 FBGA
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256Mb DDR200 DDR333 DDR400 K4H560838E 60 FBGA | |
DDR266
Abstract: DDR333 DDR400 K4H511638
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512Mb DDR266 DDR333 DDR400 K4H511638 | |
Contextual Info: DDR SDRAM 256Mb F-die x8, x16 DDR SDRAM 256Mb F-die DDR SDRAM Specification 66 TSOP-II INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, |
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256Mb | |
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DDR266
Abstract: DDR333 DDR400 256mb ddr333 200 pin K4H560438 K4H560838E-T
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256Mb DDR266 DDR333 DDR400 256mb ddr333 200 pin K4H560438 K4H560838E-T | |
DDR266
Abstract: DDR333 K4H560838E
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256Mb 60Ball DDR266 DDR333 K4H560838E | |
Contextual Info: DDR SDRAM 256Mb E-die x8 DDR SDRAM 256Mb E-die DDR SDRAM Specification 54 sTSOP-II(300mil x 551mil) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, |
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256Mb 300mil 551mil) | |
TSOP RECEIVER
Abstract: DDR333 512MB CL2.5 DDR266 DDR333 DDR400 K4H511638B
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512Mb TSOP RECEIVER DDR333 512MB CL2.5 DDR266 DDR333 DDR400 K4H511638B | |
DDR333 512MB CL2.5
Abstract: DDR266 DDR333 DDR400
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512Mb 400mil 441mil) DDR333 512MB CL2.5 DDR266 DDR333 DDR400 | |
DDR266
Abstract: TSOP RECEIVER
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k4h560838huc
Abstract: K4H561638H-UC
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256Mb k4h560838huc K4H561638H-UC | |
K4H511638C-UC/LB3
Abstract: ddr266 DDR333 DDR400
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512Mb K4H511638C-UC/LB3 ddr266 DDR333 DDR400 | |
DDR333 512MB CL2.5
Abstract: K4H510438C DDR333 DDR400
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512Mb DDR333 512MB CL2.5 K4H510438C DDR333 DDR400 | |
DDR333 512MB CL2.5
Abstract: DDR333 DDR400 k4h5116
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512Mb DDR333 512MB CL2.5 DDR333 DDR400 k4h5116 |