DDR CHANGE VOLTAGE Search Results
DDR CHANGE VOLTAGE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| DF2B20M4SL |
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TVS Diode (ESD Protection Diode), Bidirectional, +/-18.5 V, SOD-962 (SL2) | Datasheet | ||
| DF2B6M4ASL |
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TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) | Datasheet | ||
| DF2B7BSL |
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TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) | Datasheet | ||
| DF2B5M4ASL |
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TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) | Datasheet | ||
| DF2B5BSL |
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TVS Diode (ESD Protection Diode), Bidirectional, +/-3.3 V, SOD-962 (SL2) | Datasheet |
DDR CHANGE VOLTAGE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
tc45 datasheetContextual Info: 128M DDR SDRAM K4D28163HD 128Mbit DDR SDRAM 2M x 16Bit x 4 Banks Double Data Rate Synchronous RAM Revision 1.0 December 2001 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 1.0 Dec. 2001 128M DDR SDRAM |
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K4D28163HD 128Mbit 16Bit K4D28163HD-TC45/55 K4D28163HD-TC33/36 66pin 65TYP 20MAX tc45 datasheet | |
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Contextual Info: 256M DDR SDRAM K4D551638D-TC 256Mbit DDR SDRAM 4M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM Revision 1.0 February 2003 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 1.0 Feb. 2003 256M DDR SDRAM |
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K4D551638D-TC 256Mbit 16Bit K4D551638D-TC40 66pin 65TYP | |
K4D64163HF-TC40
Abstract: K4D64163HF K4D64163HF-TC33 K4D64163HF-TC36 K4D64163HF-TC50 K4D64163HF-TC60
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K4D64163HF 64Mbit 16Bit 66pin 65TYP 20MAX K4D64163HF-TC40 K4D64163HF K4D64163HF-TC33 K4D64163HF-TC36 K4D64163HF-TC50 K4D64163HF-TC60 | |
K4D261638E-TC36
Abstract: K4D261638E-TC50 K4D261638E K4D261638E-TC2A K4D261638E-TC33 K4D261638E-TC40
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K4D261638E 128Mbit 16Bit K4D261638E-TC2A K4D261638E-TC33 260mA 320mA K4D261638E-TC36 250mA K4D261638E-TC50 K4D261638E K4D261638E-TC40 | |
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Contextual Info: Preliminary DDR SDRAM DDR SDRAM 512Mb D-die x8 512Mb D-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (400mil x 441mil) (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. |
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512Mb 400mil 441mil) | |
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Contextual Info: DDR SDRAM 256Mb F-die x16 DDR SDRAM 256Mb F-die DDR SDRAM Specification 60 FBGA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, |
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256Mb | |
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Contextual Info: Target 64M DDR SDRAM K4D64163HE 64Mbit DDR SDRAM 1M x 16Bit x 4 Banks Double Data Rate Synchronous RAM Revision 0.2 October 2001 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 0.2 Oct. 2001 Target 64M DDR SDRAM |
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K4D64163HE 64Mbit 16Bit K4D64163HE-TC33/36 66pin 65TYP | |
64Mb samsung SDRAM
Abstract: DDR333 DDR266
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256Mb 54pin 64Mb samsung SDRAM DDR333 DDR266 | |
DDR266
Abstract: DDR333 DDR400 K4H511638
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512Mb DDR266 DDR333 DDR400 K4H511638 | |
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Contextual Info: DDR SDRAM 256Mb F-die x8, x16 DDR SDRAM 256Mb F-die DDR SDRAM Specification 66 TSOP-II INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, |
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256Mb | |
DDR266
Abstract: DDR333 K4H560838E
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256Mb 60Ball DDR266 DDR333 K4H560838E | |
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Contextual Info: DDR SDRAM 256Mb E-die x8 DDR SDRAM 256Mb E-die DDR SDRAM Specification 54 sTSOP-II(300mil x 551mil) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, |
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256Mb 300mil 551mil) | |
k4h560838huc
Abstract: K4H561638H-UC
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256Mb k4h560838huc K4H561638H-UC | |
K4H511638C-UC
Abstract: DDR400 DDR266 DDR333 K4H510438
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512Mb K4H511638C-UC DDR400 DDR266 DDR333 K4H510438 | |
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DDR266
Abstract: DDR333 DDR400
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512Mb DDR266 DDR333 DDR400 | |
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Contextual Info: Target spec 128M DDR SDRAM K4D261638E 128Mbit DDR SDRAM 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM Revision 0.3 December 2002 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 0.3 Dec. 2002 |
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K4D261638E 128Mbit 16Bit K4D261638E K4D261638E-TC33/36/40/50 K4D261638E-TC33 K4D261638E-TC36 66pin 65TYP | |
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Contextual Info: 16M DDR SGRAM KM432D5131 16Mbit DDR SGRAM 128K x 32Bit x 4 Banks Double Data Rate Synchronous Graphic RAM with Bi-directional Data Strobe Revision 1.1 December 1998 Samsung Electronics reserves the right to change products or specification without notice. |
OCR Scan |
KM432D5131 16Mbit 32Bit 125MHz 143MHz/125 | |
K4D263238
Abstract: K4D263238M-QC40
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K4D263238M 128Mbit 32Bit K4D263238M-QC60 2Mx32 4Mx32 K4D263238 K4D263238M-QC40 | |
DDR266Contextual Info: DDR SDRAM stacked 1Gb C-die x4/x8 DDR SDRAM Stacked 1Gb C-die DDR SDRAM Specification (x4/x8) 66 TSOP-II with Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, |
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K4D263238M-QC40Contextual Info: 128M DDR SDRAM K4D263238M 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Revision 1.3 August 2001 Samsung Electronics reserves the right to change products or specification without notice. - 1 - |
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K4D263238M 128Mbit 32Bit K4D263238M-QC40 K4D263238M-QC45 222MHz/250MHz | |
HY5DU641622AT
Abstract: HY5DU641622 HY5DU641622AT-55 HY5DU641622AT-43 hy5du641622at-5
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HY5DU641622AT 4Mx16) 4Mx16 HY5DU641622AT HY5DU641622 HY5DU641622AT-55 HY5DU641622AT-43 hy5du641622at-5 | |
K4D623237A-QC70Contextual Info: 64M DDR SDRAM K4D623237A 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and without DLL Revision 1.2 February 2001 Samsung Electronics reserves the right to change products or specification without notice. |
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K4D623237A 64Mbit 32Bit K4D623237A-QC50 K4D623237A-* K4D623237A-QC70 | |
D0-35
Abstract: K7J161882B K7J161882B-FC16 K7J161882B-FC20 K7J161882B-FC25 K7J163682B K7J163682B-FC16 K7J163682B-FC20 K7J163682B-FC25
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K7J163682B K7J161882B 512Kx36 1Mx18 512Kx36-bit, 1Mx18-bit 165FBGA D0-35 K7J161882B K7J161882B-FC16 K7J161882B-FC20 K7J161882B-FC25 K7J163682B K7J163682B-FC16 K7J163682B-FC20 K7J163682B-FC25 | |
K4H510838dContextual Info: K4H510838D K4H511638D Preliminary Industrial DDR SDRAM 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. |
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K4H510838D K4H511638D 512Mb | |