DD710 Search Results

Contextual Info: Technische Information / technical information Netz-Dioden-Modul Rectifier Diode Module DD710N16K Key Parameters VDRM / VRRM 1600V IFAVM 710A TC=100°C IFSM vT0 26000A 3570A (TC=55°C) 0,75V rT 0,145mΩ RthJC 0,062K/W Baseplate 60mm Weight 1500g For type designation please refer to actual shortform

P-20338

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1000M-25 Aug-97 9725 E3 OMEDATA DD710338AEA 1.2µ NITRIDE 08 PDIP STRESS/JOB NO. Infant / High Voltage Life 125°C, 7.0 V. P-20229, P-20338 READPOINT

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1000M-25 Aug-97 9725 E3 OMEDATA DD710338AEA 1.2µ NITRIDE 08 PDIP STRESS/JOB NO. Infant / High Voltage Life 125°C, 7.0 V. P-20229, P-20338 READPOINT

SO47

Abstract: DD711 DD713 2S54 DD710 DD716 SO-47
Contextual Info: D fll LUCAS S T A B I L I T Y ELEK LTD 81C 0 0 0 1 5 SbQ7D13 GÜQÜD1S 7 » L U C B D D S IL IC O N D IF F U S E D J U N C T IO N R E C T IF IE R S DD710 50-400V SERIES P E A K R E V E R S E V O LT A G E The D D 7 1 0 series rectifiers are case rated, 3 5 ampere silicon diffused junction, stud mounted

OA206

Abstract: DA000 stud type diodes DD716 DD713 DA002 DA2068 DA001 DD710 DD7120
Contextual Info: Rectifier diodes — generaljpurpose types cont'd Vr P h o to g r a p h s a c tu a l size T I fsm I f (AV) @ T"stud I frm max. max. max. ( 1 0 ms) max. max. max. ( 1 0ms) @ Tj = 25°C V V A °c DD7120(1 ) 50 DD7121 (1 ) 100 DD7123(1) 200 DD7126(1 ) 400 50

71001 EB

Abstract: siemens ecu Q67120-C771 CMO 765 RC fet marking code P2 SAB-80C517A-N18-T3 SIEMENS 80515 siemens ecu ems bsy 28-90 Changing from the 80C537
Contextual Info: Device Specification SIEM EN S High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C517A/83C517A-5 Preliminary SAB 83C517A-5 SAB 80C517A Microcontroller with factory mask-programmable ROM Microcontroller for external ROM • SAB 80C517A/83C517A-5,

NM27C128Q

Abstract: HC-25/U E-PROM 27C512 EPROM 27c010 27128 block diagram NM27C128QE ab-5 national 27C010 27C020 27C080
Contextual Info: NM27C128 National ÆM Semiconductor NM27C128 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM27C128 is a high performance 128K UV Erasable Electrically Programmable Read Only Memory. It is manu­ factured with National’s latest CMOS split gate EPROM

P-20606

Abstract: c19643 DS1868 p19500 p1908 DD642 P19-50 B59728 P2050
Contextual Info: RELIABILITY MONITOR STRESS: Infant / High Voltage Life 125°C, 7.0 V. 6.0 V. DS1302 PRODUCT DS1302 DS1302 DS1302 DS1868 DS21S07A DS21S07A DS21S07A DS2401 DS2401 DS2401 DS80C320 DS80C320 DS80C320 DS80C320 MONITOR DATE JOB NO. Mar-97 Jun-97 Sep-97 Feb-97 Feb-97

SSIE1420

Abstract: SSiE1210 SSIE1120 aeg diode SSiE1410 ssie1220 ssie1110 TRA1110 SSIE1205 D6050J
Contextual Info: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number Manufacturer lo Max VRRM •FSM Max A 00 (A) 00 VF IF @ IR Test (A) IR VR 25 °C @ (A) Test (V) (A) @ T2 Test CO 'Opar Max (°C) Package Style General-Purpose, lo >= 25 A (Cont'd) . . . .5 . . . .10

Contextual Info: r z r * 7 # S G S -T H O M S O N MinKisitQiniinigiïïRitaMntsi ST20450 32 BIT M ICROPROCESSOR ENGINEERING DATA FEATURES • Enhanced 32-bit CPU / \ 0 to 40 MHz processor clock 32 MIPS at 40 MHz fast integer/bit operations System Services 32-bit Processor

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

tda 7223

Contextual Info: r z 7 ^ 7 # S G S -T H O M S O N S T 9 0 E 2 7 /T 2 7 K K iiim S T 9 0 E 2 8 /T 2 8 iiim M G S 16K EPROM HCMOS MCUs WITH RAM • Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time: 500ns 12MHz internal ■ Internal Memory:

Contextual Info: SGS-THOMSON ST9020 ST9027, ST9028 IL[ 12/16K ROM HCM O S MCUs Register oriented 8/16 bit CORE with RUN, WFI and HALT modes Minimum instruction cycle time : 500ns 12MHz internal Internal Memory: ROM RAM ST9020 12K ST9027 16K 256 ST9028 16K 256 224 general purpose registers available as RAM,

c828

Abstract: tr c828 c877 ED6A cm 480b ed7a c828 as time relay iwatt marking EB 13007 c828 equivalent
Contextual Info: I I MI L-M-38510/480B 14 A p ril 1983 SUPERSEDING M I L - H - 3 8 5 10 /4 80 A 4 September 1981 MILITARY SP ECI FI C AT I ON MI CROCI RCUITS, D I G I T A L , MONOLITHIC 8 N-CHANNEL, SI LI CON GATE - B I T MICROPROCESSOR T h i s s p e c i f i c a t i o n i s a ppr ove d f o r us e by a l l

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

DP8390CV

Abstract: FB0-63 T-75-49 dp8390c
Contextual Info: SEE » bsoiiEM aa?OTsa i N a tio n a l r-75-v? Semiconductor D P 8 3 9 O C / N S 3 2 4 9 0 C N e tw o rk in te r fa c e C o n tro lle r Tab! ef Contents Generai Description The DP8390C/NS32490G Network Interface Controller NIG Is a microCMOS VLSI device designed to ease inter­

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

t9842b

Abstract: ED6A fa840 FD3405 2620D BBB02 dpc-B CB-C7
Contextual Info: TOSHIBA T6B64 TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T6B64 8-BIT CONTROLLERS FOR CONSUMER ELECTRONICS PRODUCTS 1. INTRODUCTION The T6B64 is a low-power, high-performance 8-bit Controllers for Consumer Electronics Products that has been developed using Toshiba's CMOS silicon gate

ED68

Abstract: AEG T6N 100 FD3405 ED56 T6N21 toshiba c855 aeg T6N BB801 EE20D ED6A
Contextual Info: T6N21 TOSHIBA TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT T6N21 SILICON MONOLITHIC 8BIT CONTROLLERS FOR CONSUMER ELECTRONICS PRODUCTS 1. INTRODUCTION The T6N21 is a low-power, high-performance 8bit Controllers for Consumer Electronics Product manufactured with Toshiba's silicon gate technology. It is