DD40F Search Results

Contextual Info: SANSHA E L E C T R I C MODULE MF6 CO 37E D DD40F B T 'H IS M B D D D 0 Q T 2 =1 B S E M J . . 3 - 0 7 SanRex Pow er Diode Module D D 40F series are designed for various rectifier circuits. D D 40F has two diode chips connected in series in 25 mm 1 inch width package and the

DD40F120

Abstract: DD40F160 DD40F40 DD40F80
Contextual Info: DIODE MODULE DD40F/KD40F UL;E76102 （M） Power Diode Module DD40F series are designed for various rectifier circuits. DD40F has two diode chips connected in series in 25mm 1inch width package and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage

DD40F120

Abstract: DD40F160 DD40F40 DD40F80
Contextual Info: DIODE MODULE DD40F/KD40F UL;E76102 （M） Power Diode Module DD40F series are designed for various rectifier circuits. DD40F has two diode chips connected in series in 25mm 1inch width package and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage

"Power Diode"

Abstract: DIODE M5 HALF WAVE RECTIFIER CIRCUITS single phase bridge rectifier module three phase half wave Rectifier ups single phase DD40F-160 "Battery Chargers" M5 DIODE single power diode package
Contextual Info: DIODE MODULE DD40F/KD40F UL;E76102 M Power Diode Module DD40F series are designed for various rectifier circuits. DD40F has two diode chips connected in series in 25mm 1inch width package and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage

Contextual Info: DIODE MODULE DD40F/KD40F Power Diode Module D D 4 0 F series are designed for various rectifier circuits. D D 4 0 F has two diode chips connected in series in 25 mm linch width package and the mounting base is electri­ cally isolated from elements for simple heatsink construction.

285-25

Abstract: DD40F-160 DD40F-120 DD40F-140 DD40F-20 DD40F-40 DD40F-60 DD50GB40L DD50GB40M DD50GB60L
Contextual Info: - 122- 4t m % Pr s m Vr s m fé * V M Vr V] m is isa m & * & n lo Vpm ax I fsm I Rtnax m •e o m m tt ^ m ÍV V) rc> (A ) I f (A) t (/a A ) V r (V ) D D 4 0 F — 1 20 DD40F-140 DD40F-160 DD40F-20 DD40F-40 130 0 150 0 1700 240 4 80 1200 1400 1600

DD40F-100

Abstract: DD40F-120 diode B05
Contextual Info: SANSHA E L E C T R I C 37E MFG CO D B D IO D E M O D U LE GQÜGtnS 1 7^1243 ISEMJ, / SanRex Power Diode Module DD40F series are designed for various rectifier circuits. DD40F has two diode chips connected in series in 25 mm 1 inch width package and the mounting base is electrically isolated from elem ents for simple heatsink construction.

MZMA

Abstract: DD25F EFT 308 STM-231 DBC10G DBF10E DBF20B DBF20C DBF20E DBF20G
Contextual Info: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E

BCV27

Abstract: mark ff SC10100
Contextual Info: uc tor ‘ BCV27 Discrete POWER & Signal Technologies BCV27 M a rk : F F NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings*

EFT 373

Abstract: D25F10 DBF20E dbf40b DBF40TC DBC10G DBF10E DBF20B DBF20C DBF20G
Contextual Info: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E

TMS4464FML

Abstract: LT 5247 H LT 5249 TM4464 texas instruments TMS4464FML 21D7 M4464 LT 5247
Contextual Info: TEXAS INST R 8961725 TEXAS iASIC/MENORY} ÎN S T R 77 Ì>e J flcl t i l 7 E S T A S T c TMËMORYI ADVANCE INFORMATION 65,536 □040ÛÔ1 D 77C 4 0 8 8 1 D TM4464LU8 BY 8-BIT DYNAMIC RAM MODULE OCTOBER 9185 - REVISED NOVEMBER 1985 65,536 X 8 Organization U SINGLE-IN-UNE PACKAGE

MZMA

Abstract: DBC10G DBF10E DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG
Contextual Info: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E

MZMA

Abstract: OC 170 DBC10G DBF10E DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE
Contextual Info: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E

Contextual Info: HARRIS SEMICOND SECTOR D45VM Series SbE D • 43G2271 004GÛH2 707 « H A S File Number 2357 Silicon P-N-P Transistors Complementary to the D44VM Series Features: ■ Very Fast Switching ts < 500 ns resistive t f < 75 ns • Very low VCE Sat S 0.4V @ IC = 4A

SAA 1350

Abstract: DD40F-120 DD40F-140 DD40F-160 DD40F-20 DD40F-40 DD40F-60 DD50GB40L DD50GB40M DD50GB60L
Contextual Info: - 122- 4t m % Pr s m Vr s m fé * V M Vr m is isa m Vpmax I fsm & * •e V rc> (A) (/a A) V r (V) T C C ) 1200 1400 1600 200 400 40 40 40 40 40 96c 96c 96c 96c 96c 1200 1200 1200 1200 1200 25 j 25 j 25 j 25 j 25 j 1. 40 1.4 0 1. 40 1. 40 1.4 0 120 120

MZMA

Abstract: DBC10G DBF10E DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG
Contextual Info: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E