DD34 Search Results

tba 120 ub

Abstract: tba120 TBA120 WITH TBA 850
Contextual Info: 47E D B23SbOS DD3404Ö SIEMENS 3 «SIE6 S I E M EN S A K T I E N G E S E L L S C H A F FM IF Amplifier with Demodulator TBA 120 Bipolar IC Features • • • • • • Outstanding limiting qualities Few external components Terminal for video recorder AF output voltage independent of supply voltage

simm 72pin

Abstract: D0343
Contextual Info: NEC N E C ELECTRONICS INC hlE D • NEC Electronics Inc. b427525 DD34347 3fl5 « N E C E MC-422000AA40 2,097,152 X 40-Bit Dynamic CMOS RAM Module T -Y 4 Description Pin Configuration The M C-422000AA40 is a fa s t-p a g e dynamic RAM mod­ ule organized as 2,097,152 words by 40 bits an d de­

Contextual Info: • bb53T31 DD34bM3 fiflT HIAPX N AUER PHILIPS/DISCRETE BF550 b?E D SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.

tic125

Contextual Info: 7.0 Electrical and Mechanical Specifications 7.1 Electrical and Environmental Specifications 7.1.1 Absolute Maximum Ratings C A U T IO N - Stressing the device parameters above absolute maximum ratings may cause permanent damage to the device. This is a stress rating only. Functional operation o f the device at these

Am29LV080

Contextual Info: ADVANCE INFORMATION AM DO Am29LV080 8 Megabit 1,048,576 x 8-Bit CMOS 3.0 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS Extended operating voltage range Ready/Busy output — 2.7 to 3.6 V for read and write operations — Hardware method for detection of program or

100L

Abstract: CLC408 CLC418 CLC418AJ phase shifting transformer
Contextual Info: 9 January 1996 National Semiconductor Comlinear CLC418 Dual High-Speed, Low-Power Line Driver General Description Features The Com linear CLC418 dual high-speed current-feedback operational amplifier is designed to drive low-impedance and high capacitance loads while maintaining high signal fidelity.

Contextual Info: P R E L IM IN A R Y COM’L: -15/20 M A C H 4 6 5 -1 5 /2 0 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 208 pins In PQFP ■ Up to 20 product terms per function, with XOR ■ JTAG, 5-V, In-circult programmable

Contextual Info: il Advanced Micro Devices A m 2 8 F 0 1 OA 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access tim e

473Z

Abstract: capacitor type 104z 50v capacitor 223z Y5V 104Z 473m 50v 223Z ERIE CAPACITORS U/25/20/TN26/15/850/R/k5u 104z capacitor
Contextual Info: CERAMIC DISC CAPACITORS 12-50 VDC PART NU M B ERING SYSTEM TYPE D D350 T TEM P. C HA R . Y5P LEADS 950 " ~I I CAPACITOR TYPE AND SIZE !— LEAD CONFIG. TEMPERATURE CHARACTERISTICS See lead style chart Temperature Range Y5=-30°C to +85°C MAX. CAP. CHANGE

marking Ed12

Abstract: ED9 marking diode DD35 TNETX15VE
Contextual Info: TNETX15VE VLAN-ENGINE ADDRESS-LOOKUP DEVICE SPWS028B – APRIL 1997 – REVISED SEPTEMBER 1997 D D D D D D D D D Provides up to 2K-Address Matching System VLAN Support for Single or Multiple ThunderSWITCH Devices Provides Glueless External-Address Match

TNETX3100

Abstract: DD35 ED11 TNETX15AE TNETX3150 TNETX3150A
Contextual Info: TNETX15AE ADDRESS-LOOKUP DEVICE SPWS041A – AUGUST 1997 – REVISED OCTOBER 1997 D D D D D D D D Provides up to 8K-Address Matching System Provides Glueless External-Address Match EAM Interface to the TNETX3150/TNETX3150A/TNETX3100 Uses Standard Off-the-Shelf 15-ns SRAMs

MB90W673

Abstract: DD84 DD62 F2MC-16 MB90670 MB90671 MB90672 MB90673 MB90675 DD44
Contextual Info: FUJITSU SEMICONDUCTOR CM43-10102-2E CONTROLLER MANUAL F2MC-16L 16-BIT MICROCONTROLLER MB90670/675 SERIES USER’S MANUAL 1. The products described in this manual and the specifications thereof may be changed without prior notice. To obtain up-to-date information and/or specifications, contact your Fujitsu sales representative

Lifan

Contextual Info: B U R R - B R O W N <1 E DAC7615 m Serial Input, 12-Bit, Quad, Voltage Output DIGITAL-TO-ANALOG CONVERTER FEATURES APPLICATIONS • LOW POWER: 20mW • PROCESS CONTROL • UNIPOLAR OR BIPOLAR OPERATION • ATE PIN ELECTRONICS • CLOSED-LOOP SERVO-CONTROL

Contextual Info: H M 6 2 W 8 5 1 1 H S e r ie s 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-750 Z Preliminary Rev. 0.0 F eb.27,1997 Description The HM62W8511H is an asynchronous high-speed static RAM organized as 512-kword x 8-bit. It achieves high-speed access time (10/12/15 ns) through 0.35 p.m CMOS process and high-speed circuit designing

Contextual Info: HM67S36130 Series 131,072-words x 36-bits Synchronous Fast Static RAM HITACHI ADE-203-659A Z Product Preview Rev. 1 Feb. 21,1997 Features • 3.3V ± 5% Operation • LVCMOS Compatible Input and Output • Synchronous Operation • Internal self-timed Late Write

TNETX3100

Abstract: sm05c
Contextual Info: TNETX3100 ThunderSWITCH IO-PORT10-/1OO-MBIT/S ETHERNET™ SWITCH SPWS031 D - JU N E 1997 - R EVISED O C TO B E R 1997 • Highly Integrated Single-Chip Shared-Memory Switch Supports Multiple Media-Access Controller MAC Address Switching Modes • Provides Eight 10-Mbit/s Ethernet Ports

dk52

Abstract: P-15782 DK53 P15890 P-16795 148259 p16038 P-17201 C19517 P-15837
Contextual Info: RELIABILITY MONITOR STRESS: Infant / High Voltage Life 125°C, 7.0 V. 6.0 V. DS1302 SUMMARY TYPE: PRODUCT DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS80C320 DS80C320 DS80C320 DS80C320

Contextual Info: S G S- THOMSON 42E D Bl TTETSB? 0034456 4 B ISSTH r z j s g s - h io m s o ^ ^ 7 # » ^ n ^ © I ( L i© ¥ K C Q ( ^ 0 ( g i S T 9 0 R 4 0 ROMLESS HCMOS MCU WITH EEPROM, RAM AND A/D ADVANCE DATA • Single chip microcontroller with 256 bytes of RAM and 256 bytes of Register File with 224

nsc800

Abstract: NSC800 cpu ED6A TRANSISTOR BC 748 ED52 mtA srl nsc810 Z80A dma 3337A nsc831
Contextual Info: NSC800 National á u tSemiconductor NSC800 High-Performance Low-Power CMOS Microprocessor General Description Features The NSC800 is an 8-bit CMOS microprocessor that func­ tions as the central processing unit CPU in National Semi­ conductor’s NSC800 microcomputer family. National’s

Contextual Info: TNETX3150/TNETX3150A ThunderSWITCH 15-PORT 10-/100-MBIT/S ETHERNET SWITCH SPWS027F – FEBRUARY 1997 – REVISED SEPTEMBER 1997 D D D D D D D D D D Highly Integrated Single-Chip Shared-Memory Switch Provides 12 10-Mbit/s Ethernet Ports, 2 10-/100-Mbit/s Ethernet Ports, and a

Contextual Info: K M 4 4 C 1OOOD J CMOS DRAM ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

Contextual Info: SUPERTEX INC blE ]> • a?732c 5 □DD347CJ 204 « S T X HV87 HV88 in C m 32-Channel Serial To Parallel Converter With High Voltage Push-Pull Outputs Ordering Information_ , _ _ Package Options 44 J-Lead Quad Plastic Chip Carrier HV87

Contextual Info: KM44V16100AK CMOS D R A M ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,

Contextual Info: KM44 V 1 6004 AS CMOS DRAM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. ,