DD013 Search Results

Skan-a-matic

Abstract: L31011
Contextual Info: ^ t - O l a p g fe ra sen so r Qg N ib U H A T E O s y s t e m s FASCO INDS/ SENISVS 40E D INDUSTRIAL PRODUCTS _ V 34 3 4 cn73fl DD013TE □ ^ S E N I • 1 L30/P30 Series Continued Features: ■ B B B B Rated S eparation: 1 0 to 2 4 in . Beam D iam eter: .06 to .12 in.

Contextual Info: CERMETEK MICROELECTRONICS bäE J> • EÜDSflDB DD0133Ö Obü « C E R CH1792 - V.32/9600 bps CH1793 - V.32 bis/14,400 bps FAX/Modem Module Technology patent pending INTRODUCTION The CH1792 and CH1793 are very small, high speed modem and FAX modules. They provide simplicity and short time to

varactor diode capacitance measurement

Abstract: 6810D J 6810D f j 6810d gaas varactor diodes DDD1367 DVE6810A DVE6810B DVE6810C DVE6810D
Contextual Info: High Cutoff GaAs Parametric Amplifier Varactor Diodes ALPHA IND/ SEMICONDUCTOR €1 4fiE D # • 0535443 DD013S7 742 * A L P Feafures "T -O l-l \ Highest Cutoff Frequencies Available, from 900 to 1300 GHz More Accurate and Reliable Characterization Measurement

Contextual Info: 3 3 6 8 6 0 2 SOL ITRON DEVICES INC bl DE P a B ^ O a DD0131S □ J~_ ’7 > 3 3 y 3 S o l i t r o n Devices, Inc. S P E C I F I C A T I O N S MAXIMUM RATINGS Voltage, Collector to Base VCB0 NO.: 2N 53Q 3 TYPE: NPN F.PI BASE .CASE: TO—3 .

20323

Abstract: SOLITRON DEVICES
Contextual Info: 8368602 SOLITRON D E VICES ~ r T -33-29 » F | ñ 3 b ñ b D 5 DD013S1 3 61C INC S0LITR0N DEVICES INC bl 0135Í - mrrrak., iimncEs SDM 20321 SDM 20322 SDM 20323 SDM 20324 mm ÌH 'is E -3 l r * p p :j r* u SEMICONDUCTOR ; GROUP I i i •'„V-V.J 15 AMP FAST SWITCHING

8Z-2

Contextual Info: 0182998 ACRIAN INC —^7 DE^OlAa^a rJm £ 5 * « S Æm H m ¡¡¡Si H P S r , H a ik W wSm mm w&à I DD013H3 t " J ^ D 1 " * 3 3 -07 TUPÍAN C2-8Z GENERAL DESCRIPTION This device is specifically designed for 8 Volt operation in VHF/UHF power amplifier applications covering

VSB53

Abstract: VSB52S VSB53S vsb52
Contextual Info: MICROSEMI CORP/ niCRO SbE D • bllS^G? DD0137T bfil W M Q L T 0 / Schottky ‘2 r 0 3 M IC R O O U A L IT V DIB / SEMICONDUCTOR. INC 750 mA Dual In-Line Bridge v s b -s Series For Surface Mount Applications 20V, 30V, and 4 0V V RRM Ratings .65 Volts VF Per Diode at 750 mA

VHE802

Abstract: VHE804 VHE801 VHE803 A1072
Contextual Info: rilCROSEMI CORP/ MICRO SbE D • bllSRD? DD013S? Tld ■ H Ö L 7^ 0 ^ / MICRO QUALITY / / S E M IC O N D U C TO R . INC 70 Amp Epitaxial High Efficiency Rectifiers 50 Volt, 100 Volt, 150 Volt and 200 Volt VRRM Low Thermal Resistance Extremely Low Leakage at High Temperature

Contextual Info: •HYUNDAI SEMICONDUCTOR HY531000 Series 1Mx 1-bit CMOS DRAM DESCRIPTION The HY531000 is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: ICS9158 Integrated Circuit Systems, Inc. Integrated Buffer and Motherboard Frequency Generator General Description Features The ICS9158 is a low cost frequency generator designed specifically for desktop and notebook PC applications. Eight high drive, skew-controlled copies of the CPU clock are avail­

Contextual Info: PowerPC 403GC 32-Bit RISC Embedded Controller Features Overview • PowerPC RISC CPU and instruction set architecture • Glueless interfaces to DRAM, SRAM, ROM, and peripherals, including byte and half-word devices • Separate instruction cache and write-back

P3100B

Contextual Info: CERMETEK MIC RO ELECTRONICS Cenmetek m lo f o e la e t r a n i e B bflE D • 2005603 0001372 22^ M C E R CH1840 - Low Profile Data Access Arrangement DAA Direct Connect Telephone Line Interface Technology patent pending INTRODUCTION FEATURES The C H 1840 is an ultra small, low profile Data Access Arrange­

Contextual Info: Specifications • Contacts: phosphor bronze, standard; bare CDA 725, optional • Contact Plating: 30/j. in. gold in mating area over 5 0 ^ in. nickel, standard: 10n in. gold (in mating area) over 50ju in. nickel, optional; 50¡x in. gold (in mating area) over 50p. in. nickel, optional; 100ju in. tin-lead,

Contextual Info: FDC37C665GT FDC37C666GT STANDARD MICROSYSTEMS CORPORATION, PRELIMINARY 80 Arkay Drive, Hauppauge, NY 11788 <516 435-6000 Fax 516) 231-6004 Advanced High-Performance Multi-Mode1 Parallel Port Super I/O Floppy Disk Controllers kTM FEATURES • • • • •

74C14

Abstract: CH1827
Contextual Info: CERMETEK MICROELECTRONICS m le r o * l» o tr o n lc a bäE » • 20GSÖÜ3 QDD13bb T25 M C E R CH1827 Family of Ultra Low Profile Data Access Arrangement for PCMCIA Technology patent pending. INTRODUCTION The CH1827 fits inside the PCMCIA package so that a voice,

Contextual Info: PCI 9060SD MAY 1996 VERSION 0.6 PCI Bus Master Interface Chip for Master and Slave Adapters General Description _ Featu res_ • • PCI Specification 2.1 compliant PCI Bus Master Interface supporting master and slave adapters

Viper L2A

Abstract: opti 82c596 82C558N 82C465MV opti 82C556
Contextual Info: 82C556/82C557/82C558N Viper Notebook Chipset Data Book Revision: 1.0 912-3000-032 May 25,199 5 Copyright Copyright 1995, OPTi Inc. All rights reserved. No part of this publication may be reproduced, transmitted, transcribed, stored in a retrieval system, or translated into any language or computer language, in any form or by any means, electronic, mechani­

Contextual Info: OM6508SA OM65Q9SA INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-254AA PACKAGE 500 Volt, 5 And 10 Amp, N-Channel IGBT With a Soft Recovery Diode In A Hermetic Metal Package FEATURES • • • • • • • • • Isolated Hermetic Metal Package

Contextual Info: ^ - 0 9 - 2 r - o '7 Chip Tantalum Capacitors RGA manufactures chip tantalum capacitors to meet and exceed EIA standards. B Standard tolerances are ±10% and ±20%. 5% available upon request Operational temperature -55°C to +85°C at rated voltage and up to +125°C with voltage derating.

LDD-C514R1

Abstract: LDD-A514R1 LDQ-N516R1-RA LDQ-M512R1 IFR 630 MF 1T4 tube RGB DOT matrix 8x8 LED common anode LDS-AD16RI LDQ-N516R1 LDS-A3914RI
Contextual Info: le d -d is p la y s ta b le o f c o n te n ts TABLE OF CONTENTS Page s GENERAL INFORMATION .2 PART NUMBERING S Y S T E M . 3 INTENSITY S E LE C T IO N . . . 5 ELECTRO/OPTICAL LED CHIP

4530S

Contextual Info: OM6009SA 3M6011SA OM6109SA 0M6111SA OM601 OSA OM6012SA OM6110SA OM6112SA POWER MOSFETS IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V, Up To 22 Amp, N-Channel MOSFET In Hermetic Metal Package, With Optional Zener Gate Clamp Protection FEATURES • Isolated Hermetic Metal Package

83010

Contextual Info: TD2bfl72 D D D 1 31 S 025 • T H C H 7 - S'/- /O- SSE D O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX TH0 H S0 N MIL ET S P A T I A U X TS 83010 CMOS 10-BIT, 20 MHz FLASH A/D CONVERTER DESCRIPTION The TS 83010 is a m o n o lith ic CM O S 10 b it p a ra lle l fla s h

Contextual Info: FAST RECOVERY SINGLE-PHASE FULL WAVE BRIDGE 4.0 AMPERES FOR RC. BOARD MOUNTING PRV/leg 50V 100V 200V 400V 600V 800V 1000V Type No. PER05 PER10 PER20 PER40 PER60 PER80 PER100 ELECTRICAL CHARACTERISTICS PER LEG at T a = 25*C Unless Otherwise Specified Max. Reverse Recovery, Trr (Fig. 3)

4707

Abstract: D001351
Contextual Info: V T C INC TTD D "Jj c13ûô,:iaci □□□134'i □ T T - 7 9 - 0 7 -2 0 VA4707 QUAD HIGH-SPEED, FAST-SETTLING, HIGH OUTPUT CURRENT OPERATIONAL AMPLIFIER, A C L S 12 FEATURES • Fast Settling Time: ±0.1% in 150ns • High Slew Rate: 105V/|ts • Large Gain Bandwidth: 300MHz