DD S22 Search Results

PANASONIC C6073

Abstract: c6073 C6074 INVENTEC c6067 bq24721 fds8884 FDS6900AS Cross Reference GMT916 alc889
Contextual Info: Digitally signed by dd DN: cn=dd, o=dd, ou=dd, email=dddd@yahoo.com, c=US Date: 2009.11.29 07:54:50 +07'00' www.kythuatvitinh.com KiliManjaro 2.0 Montevina DDR3 Pre-MV Build 2008.06.19 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV

tps51620

Abstract: alc889 bq24721 tps51125 ITE8512E C5134 TI_BQ24721C_QFN_32P INVENTEC JMB385 fds8884
Contextual Info: www.kythuatvitinh.com KiliManjaro CS Build A02 2008.02.04 Digitally signed by dd DN: cn=dd, o=dd, ou=dd, email=dddd@yahoo. com, c=US Date: 2009.11.29 17:18:29 +07'00' EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX

DA0ZR1

Abstract: NFW22 Pr1363 FW04 PC87541v 88e8038 quanta IR 334 foxconn 14 pin JTAG CONNECTOR
Contextual Info: 5 4 PCI-E 100MHz Digitally signed by dd DN: cn=dd, o=dd, ou=dd, email=dddd@yahoo. com, c=US Date: 2010.01.09 20:49:27 +07'00' VGA 96MHz USB 48MHz D PCI 33MHz REF 14MHz Page : 2 3V_591 Page : 21 +3V_S5 1 GDDR2 Page : 27 PCIE Yonah / Merom GDDR2 NVIDIA G72M-V

S229

Abstract: 6 pin s229 S229 SOT23-6
Contextual Info: TPA701 700-mW LOW-VOLTAGE AUDIO POWER AMPLIFIER SLO S229 —N O VEM BER 1998 • Fully Specified for 3.3-V and 5-V Operation • Wide Power Supply Compatibility 2.5 V - 5.5 V • Output Power for R|_ = 8 £2 - 700 mW at V DD = 5 V, BTL - 250 mW at V DD = 3.3 V, BTL

Contextual Info: S WIRELESS E M I C O N D U C T 0 R , I N C COMMUNICATIONS LN A V dd LN A M IXER ^ M XR V dd 3-VPCS-Band CDMA Downconverter 1C GAIN GN D S E LE C T GN D LO IN B U FF E R LO EN OUT GND Features The TQ9225 is a 3-V, RF receiver 1C designed specifically for PCS-band CDMA

TQ9114

Contextual Info: T R I Q U I N S T E M I C 0 N D U C T 0 TQ SJl W I R E L E S S , I N C TQ9272P PRELIMINARY C O M M U N I C A T I O N S R Block Diagram VTUNE OSC IND+ OSC OSC IND- OSC V dd OUT2 General-Puipose RFIC Downconverter OSC OUT1 MIXER V dd MIXER IF MIXER IF V„D

4000 series CMOS Logic 14001

Abstract: Manual Step Attenuator
Contextual Info: Digital Step Attenuator 50Q _ 15.5 dB, 0.5 dB Step 5 Bit, Parallel Control Interface, Dual Supply Voltage Product Features • Dual supply voltage: V DD=+3V, VSS=-3V • Immune to latch up • Excellent accuracy, 0.1 dB Typ • Parallel control Interface

DAT-15575-PN

Abstract: TB-341
Contextual Info: Digital Step Attenuator _ 15.5 dB, 0.5 dB Step 5 Bit, Parallel Control Interface, Dual Supply Voltage Product Features • Dual supply voltage: V DD=+3V, VSS=-3V • Immune to latch up • Excellent accuracy, 0.1 dB Typ • Parallel control Interface

MM74HC14

Abstract: PL-185
Contextual Info: Digital Step Attenuator _ 31.5 dB, 0.5 dB Step 6 Bit, Serial Control Interface, Dual Supply Voltage Product Features • Dual Supply Voltage: V DD=+3V, VSS=-3V • Immune to latch up • Excellent accuracy, 0.1 dB Typ • Serial control Interface

PL202

Contextual Info: Digital Step Attenuator _ 15.5 dB, 0.5 dB Step 5 Bit, Serial Control Interface, Dual Supply Voltage Product Features • Dual supply voltage: V DD=+3V, VSS=-3V • Immune to latch up • Excellent accuracy, 0.1 dB Typ • Serial control Interface

ST14

Contextual Info: Digital Step Attenuator 75Q _ 31.5 dB, 0.5 dB Step 6 Bit, Parallel Control Interface, Dual Supply Voltage Product Features • Dual Supply Voltage: V DD=+3V, VSS=-3V • Immune to latch up • Excellent accuracy, 0.1 dB Typ • Parallel control Interface

DAT-15R5-SN

Contextual Info: Digital Step Attenuator 50Q _ 15.5 dB, 0.5 dB Step 5 Bit, Serial Control Interface, Dual Supply Voltage Product Features • Dual supply voltage: V DD=+3V, VSS=-3V • Immune to latch up • Excellent accuracy, 0.1 dB Typ • Serial control Interface

transistor NEC D 882 p

Abstract: nec d 882 p transistor NEC b 882 p nec d 882 p transistor transistor NEC 882 p NEC 882 p transistor NEC b 882 nec d 882 p transistor transistor transistor nec d 882 nec d 882
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK255 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS Low V dd Use Unit: mm (Vds = 3.5 V) 2 . 1+ 0.2 Driving Battery Low Noise Figure :

DAT-3175-SN

Abstract: TB-343
Contextual Info: Digital Step Attenuator 75Q DC-2000 MHz 31 dB, 1 dB Step 5 Bit, Serial Control Interface, Dual Supply Voltage Product Features • Dual Supply Voltage: V DD=+3V, VSS=-3V • Immune to latch up • Excellent accuracy, 0.1 dB Typ • Serial control Interface

Contextual Info: REVISIONS LTR DESCRIPTION DATE Prepared in accordance with ASME Y14.24 APPROVED Vendor item drawing REV PAGE REV PAGE REV STATUS OF PAGES REV PAGE 1 2 3 PMIC N/A PREPARED BY Phu H. Nguyen Original date of drawing YY MM DD CHECKED BY 13-01-08 Phu H. Nguyen

Contextual Info: Anforderunqsslufe 21.4 Date Cade /dass Z Dd IN d3 d XXXXXXX r~ ~ ~ n 10 X 2 -20 10 X 2 -20 7 X 2 -14 EE-Zane für durchkantaklierte Lflcher 0O.6±O.O5 compliant zane far Èra hole 0O.6±aO5 Ebene - Level 3 Bestuckungsplan - an te/ layout 25»S222120B«1716fi

laser diode spice model simulation

Abstract: Gigabit Logic
Contextual Info: TEKTRONIX INC/ TRI 2UINT 2bE 1 Bl ÖTObHlfl DDÜGSQ7 7 HITRÛ ' T - q ’i - l S [(È lB ÏL J G ig a B it L o g ic 16G020 Programmable Single Gate GaAs D-MESFET Array FEATURES • 11 single gate depletion MESFETs on each chip • f t = 22 GHz typical frequency response

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3098 U nit in mm V H F— UHF B A N D LO W NOISE AM PLIFIER APPLICATIONS. + 0.5 2.5 - 0 . 3 + 0 .2 5 1 .5 - 0 .1 5 • Low Noise Figure. dd . NF = 2.5dB, |S2iel2= 14.5dB f= 500MHz +I Et . NF = 3.0dB, |S2 ie l2 = 9.0dB(f=lGHz)

Contextual Info: bTE N AMER P H I L I P S / D I S C R E T E » bfc.5 3 R 31 DD 3 2 5 M2 bbfl * A P X Philips Semiconductors Product specification CATV amplifier module FEATURES g BGY887B PINNING - SOT115J2 • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input

Contextual Info: TetraFET D1217UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B A E 2 pls C 1 K 2 3 4 G F 8 7 6 5 J Typ. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 12.5V – 500MHz PUSH–PULL D M Q FEATURES P O N I H DD PIN 1 PIN 3 PIN 5 PIN 7

t50-6 toroid

Abstract: D1024UK T50-6 T506 j354
Contextual Info: TetraFET D1024UK METAL GATE RF SILICON FET MECHANICAL DATA B A E 2 pls C 1 K 2 3 4 G F 8 7 6 5 J Typ. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 500MHz PUSH–PULL D M Q FEATURES P N I O H DD PIN 1 PIN 3 PIN 5 PIN 7 SOURCE (COMMON)

Contextual Info: SEP 3 ti 199'* Data Sheet i ÖNTOIGICS ADC20013 _ 950-2050 MHz D B S Tuner IC p r e lim in a r y Your GaAs I C Source Rev 2 FUNCTIONAL BLOCK DIAGRAM FEATURES • • • • • • • • • V dd Monolithic D B S Tuner IC On chip Oscillator 10 dB Noise Figure

Contextual Info: WIRELESS COMMUNICATIONS TQ9201P Block Diagram LN A IN1 S E LE C T LN A INO u V dd M IXER lo in Low-Current MMIC Downconverter GND GND M IXER IF O U T GND TQ9201P GND 5 GND - —CD—® —(D-hJo GND GN D *5 ^ Product Description The TQ9201P MMIC Downconverter is a

smd transistor marking A3

Abstract: telefunken ha 880 telefunken ha 800 "59 R" mosmic 945 mosmic S595T S595TR A3 smd sot-143 telefunken ha 750 m
Contextual Info: T em ic S595T/S595TR S e m i c o n d u c t o r s MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage M OSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. M Applications V dD Low noise gain controlled input stages in UHF- and VHFtuner with 5 V supply voltage.