DD 22 S 800 Search Results

72332

Contextual Info: Euro Series Copper Compression Terminals for Crimping Material: Manufacture: Surface: E-Cu DIN40500 Stamped Lead Dipped S ize mm2 Flanges L A 10 32 18 12 3 3 .5 10 34 12 3 5 .5 23 39 28 *16 *25 Dd> Bl|) 7 10 Weight Cat. No. 1.35 41813 22 1.40 41822 19 1.85

stepper em 434

Abstract: pma 71xx PMA7107
Contextual Info: TargetDatasheet.book Page 1 Friday, August 22, 2008 5:27 PM Pr el i m i n ary D a t a S he et , V1 . 1, A ug us t 20 0 8 PMA71xx S m a r t L E W I S TM M C U RF T ra ns m it t er F S K / A S K 3 15 / 43 4/ 8 68 / 9 15 M Hz Em be dd ed 80 51 M icr oco ntr ol le r w i t h 1 0 b it A D C

Contextual Info: D a ta S h e e t , V0 . 8 , A u g . 2 0 0 3 H Y S 7 2T 64 0 0 0G R 512 MB yte H Y S 7 2T 12 8 0 00 G R ( 1 G B y t e) H Y S 7 2T 12 8 0 20 G R ( 1 G B y t e) H Y S 7 2T 25 6 0 22 G R ( 2 G B y t e) DD R 2 R egist ered D IMM Modu les Mem ory P ro duc ts N e v e r

Contextual Info: DIRECTIONAL COUPLERS 50 & 75Ω Coaxial 6 to 30 dB COUPLING 5 kHz to 2000 MHz ZADC - case CC51 ZADC - case F14 FREQ. RANGE MHz n ZADC-10-4-75 NEW n ZADC-20-18-75 MAINLINE LOSS dB DIRECTIVITY dB MJ fL-fU L U Nom. Flatness Typ.Max. Typ.Max. Typ.Max. 800-1000

Contextual Info: NJG1127HB6 800MHz Band LNA GaAs MMIC  GENERAL DESCRIPTION The NJG1127HB6 is a LNA IC designed for 800MHz band CDMA2000 cellular phone. This IC has LNA bypasses function, and high gain mode or low gain mode can be selected. High IIP3 and a low noise are achieved at the High gain

Contextual Info: _ Fro m: 2194774856 Page: 1/22 Date: 9/10/2004 2:30:07 PM OKAYA ELECTRIC AMERICA, INC503 WALLST., VALPARAISO IN 46383 TEL: 800-852-0122 FAX: 219-477^356 SPECIFICATIONS CUSTOMER : OKAYA A SAMPLE CODE (This Code will be changed while mass production)

STE22N80

Abstract: STH8N80 E81743
Contextual Info: STE22N80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V DSS R DS on ID STE22N80 800 V < 0.4 Ω 22 A 4 • ■ ■ ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE STH8N80 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER

Contextual Info: Agilent HMMC-5021 2-22 GHz , HMMC-5022 (2-22 GHz), and HMMC-5026 (2-26.5 GHz) GaAs MMIC Traveling Wave Amplifier 1GG7-8000, 1GG7-8006, 1GG7-8007 Data Sheet Description The HMMC-5021/22/26 is a broadband GaAs MMIC traveling wave amplifier designed for high gain and

Traveling Wave Amplifier

Abstract: TCA 810 1GG7 agilent HMMC 83040 hmmc5022
Contextual Info: Agilent HMMC-5021 2-22 GHz , HMMC-5022 (2-22 GHz), and HMMC-5026 (2-26.5 GHz) GaAs MMIC Traveling Wave Amplifier 1GG7-8000, 1GG7-8006, 1GG7-8007 Data Sheet Description The HMMC-5021/22/26 is a broadband GaAs MMIC traveling wave amplifier designed for high gain and

Contextual Info: ADVANCE 4 TECHNOLOGY, INC. MT49V4M16 400 Mb/s/pin I | 1 SLDRAM li il IV I For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Very high speed: 400 MHz data rate • 800 M B /s peak 1 /O bandwidth provides very high

UM91611

Abstract: T25610 UM91610
Contextual Info: UM O U M 91611 10 Memory Pulse Dialer ¡55 Features • Ten 18-digit number memories plus last number redial Independent select inputs for variation o f dialing rates 10PPS/20PPS , make/break ratio (33*/4:66% /4 0 :6 0), memory (22 digit) memory on chip inter-digit pause (400ms/800ms)

1gg7-8002

Abstract: 1gg7
Contextual Info: Agilent HMMC-5027 2-26.5 GHz Medium Power Amplifier 1GG7-8002 Data Sheet Features • Wide-frequency range: 2-26.5 GHz • Moderate gain: 7 dB • Gain flatness: ±1 dB • Return loss: Input: -13 dB, Output: -11 dB • Low-frequency operation capability:

1GG7

Abstract: 83040
Contextual Info: Agilent HMMC-5027 2-26.5 GHz Medium Power Amplifier 1GG7-8002 Data Sheet Features • Wide-frequency range: 2-26.5 GHz • Moderate gain: 7 dB • Gain flatness: ±1 dB • Return loss: Input: -13 dB, Output: -11 dB • Low-frequency operation capability:

E22N80

Abstract: lta 301
Contextual Info: £ j ï SGS-THOMSON ULKgraMOeS S T E 22 N80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYP E STE22N80 V dss 800 V R D S o n Id < 0 .4 Q. 22 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE STH8N80 FOR RATING) . VERY LARGE SOA - LARGE PEAK POWER

NJG1127HB6

Abstract: NJG1127HB6* design note NJG1127HB6* note HK1005
Contextual Info: NJG1127HB6 800MHz Band LNA GaAs MMIC ! GENERAL DESCRIPTION The NJG1127HB6 is a LNA IC designed for 800MHz band CDMA2000 cellular phone. This IC has LNA bypasses function, and high gain mode or low gain mode can be selected. High IIP3 and a low noise are achieved at the High gain

guide gaas mmic distributed amplifier

Abstract: 1gg6 2686 0112 agilent HMMC Traveling Wave Amplifier
Contextual Info: Agilent HMMC-5025 2-50 GHz Distributed Amplifier 1GG6-8000 Data Sheet Features • Frequency Range: 2-50 GHz • Small Signal Gain: 8.5 dB • P-1 dB @ 40 GHz: 12 dBm • Noise Figure: 5 dB @ 2-35 GHz 7 dB @ 35-50 GHz • Return Loss: In/Out: <- 10 dB • 30 dB Gain Control

nf950

Abstract: LFA30 AWR8001 L68J
Contextual Info: AWR8001 E è î ÈQGKS' 800 MHz -1 GHz Receiver MMIC Data Sheet Rev 0 Your GaAs IC Source FUNCTIONAL BLOCK DIAGRAM FEATURES T o E x te rn a l Im a g e F ilte r Monolithic Down Converter Fro m E xte rn a l |m a g e F ilte r 2.5 dB Noise Figure 20 dB Conversion Gain

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R - BROWN« [ DIR1700 ] PRELIMINARY INFORMATION SUBJECT TO CHANGE WITHOUT NOTICE www.burr-brown.com/databook/DIR1700.html DIGITAL AUDIO INTERFACE RECEIVER STANDARD DIGITAL AUDIO INTERFACE RECEIVER (EIAJ1201)

S25610

Abstract: Pulse Dialing in rotary phones S2560G S2560A
Contextual Info: •> GOULD A M I S e m ic o n d u c to rs S25610 □ Independent Select Inputs for Variation of Dialing Rates 10pps/20pps , Mark/Space Ratio (331/3 -662/31 40-60), Interdigit Pause (400ms/800ms). Features □ Complete Pin Compatibility With S2560A and S2560G Pulse Dialer Allowing Easy Upgrading of

H6NA80FI

Abstract: WNA80 6NA80 o247 STH6NA80FI STW6NA80
Contextual Info: STW6NA80 STH6NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST WNA80 ST H6NA80FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 2.4 Ω < 2.4 Ω 5.4 A 3.4 A TYPICAL RDS(on) = 0.012 Ω AVALANCE RUGGED TECHNOLOGY

NJG1127HB6

Abstract: HK1005
Contextual Info: NJG1127HB6 800MHz 帯低雑音増幅器 GaAs MMIC •概要 ■外形 NJG1127HB6 は 800MHz 帯 CDMA2000 携帯電話端末での使用 を主目的としたバイパス回路付き低雑音増幅器です。ロジック回路 を内蔵しており1 ビットのコントロール信号で High Gain モード

ss 297 transistor

Abstract: MRFIC 917
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The MRFIC Line MRFIC0904 900 MHz GaAs Two-Stage Driver Amplifier The MRFIC0904 is an integrated driver amplifier designed for class A/B operation in the 800 MHz to 1 GHz frequency range. The design utilizes Motorola’s Advanced GaAs FET process to yield superior performance and

FFP16

Abstract: FFP16-C1 GRM36 HK1005 NJG1312PC1
Contextual Info: NJG1312PC1 SPDT SWITCH DRIVER AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1312PC1 is a GaAs MMIC mainly designed for CDMA 800MHz band cellular phone handsets. This Ic features low current consumption and variable gain. An ultra small & thin FFP package is adopted.

SC24

Abstract: R30-R33 1536KHZ
Contextual Info: EPSON P F 800-02 SMC63A08 4-bit Single Chip Microcomputer • • • • 4-bit Low Cycle / Inst. Core CPU Built-in Dot-matrix Type LCD Driver Low Voltage Operation 0.9V Min. Built-in Gate Array I DESCRIPTION The SMC63A08 is a CMOS 4-bit microcomputer composed of a CMOS 4-bit core CPU, ROM, RAM, dot-matrix