DCR5980A
Abstract: DCR5980A12 DCR5980A14 DCR5980A16 DCR5980A18 DCR5980Z
Contextual Info: DCR5980A DCR5980A Phase Control Thyristor Replaces DCR5980Z issue December 2002, version DS5482-2.0 FEATURES • Double Side Cooling ■ High Surge Capability ■ Low Inductance Internal Construction PDS5649-1.0 August 2003 KEY PARAMETERS VDRM max IT(AV)
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Contextual Info: DCR5980A DCR5980A Phase Control Thyristor Replaces DCR5980Z issue December 2002, version DS5482-2.0 FEATURES • Double Side Cooling ■ High Surge Capability ■ Low Inductance Internal Construction PDS5649-1.0 August 2003 KEY PARAMETERS VDRM max IT(AV)
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dcr5980adcr5980zds5482-2pds5649-1+58000a000v/dcr5980a18dcr5980a16dcr5980a14
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DCR5980A18
Abstract: DCR5980A12 DCR5980A14 DCR5980A16
Contextual Info: DCR5980A18 Phase Control Thyristor DS5649 1.1 January 2007 LN25138 FEATURES KEY PARAMETERS • Double Side Cooling • High Surge Capability • Low Inductance Internal Construction VDRM IT(AV) ITSM dV/dt* dI/dt 1800V 5985A 98000A 1000V/µs 250A/µs APPLICATIONS
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dcr5980a18ds5649ln251388000a+4dcr5980a16dcr5980a14dcr5980a12500ma
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Tag 225-600
Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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ds5766-4tag 225-600igbt cross-referencescr gto+7fast diode 3000vtag 200-600522.500. 5 x 20 mmhvdc plusscr phase control battery chargeresm 30 450 vgto thyristor application notes
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DIODE GE
Abstract: DCR604SE DCR504S GE brand thyristor thyristor Vtm 6.5 DCR504ST DCR720E DCR803SG DCR806SG DCR818SG
Contextual Info: AN5001 Application Note AN5001 Use Of The VTO, rT On-state Characteristic Model Application Note Replaces February 2003 version, AN5001-6.0 AN5001-7.0 February 2004 The use of the VTO, rT on-state characteristic model and a more accurate alternative. where A, B, C and D are constants with values specific to the
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an5001an5001-6an5001-7diode ge+9dcr604sedcr504sge brand thyristorthyristor vtm 6.5dcr504stdcr720edcr803sgdcr806sgdcr818sg
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DCR2950W
Abstract: igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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ds5766-4dcr2950wigbt types 6000vigbt sinewave inverter+7thyristor phase control 600v to 1600vdcr2630ytag 225-600pt85qwx45hvdc plusbi-directional switches igbtgto hvdc thyristor
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