DBS21 Search Results

CHA2066

Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22
Contextual Info: CHA2066 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges

CHA2066

Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22 993 99f
Contextual Info: CHA2066 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges

JCA Technology low noise amplifier

Abstract: AD8354ACP-R2 02722 JCA Technology 812
Contextual Info: 1 MHz to 2.7 GHz RF Gain Block AD8354 Fixed gain of 20 dB Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 4 dBm Input/output internally matched to 50 Ω Temperature and power supply stable Noise figure: 4.2 dB Power supply: 3 V or 5 V APPLICATIONS

Contextual Info: 1 MHz to 2.7 GHz RF Gain Block AD8353 Fixed gain of 20 dB Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 9 dBm Input/output internally matched to 50 Ω Temperature and power supply stable Noise figure: 5.3 dB Power supply: 3 V or 5 V APPLICATIONS

CHA2069-99F/00

Abstract: CHA2069
Contextual Info: CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via

MAR105

Abstract: CHA2066 MS11 MS12 MS21 MS22 PS11 PS12 PS22 RF 3826
Contextual Info: CHA2066 RoHS COMPLIANT 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via

nf46

Abstract: CHA3666 CHA3666-SNF
Contextual Info: CHA3666-SNF 5.8-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in hermetic package Description The CHA3666-SNF is a two-stage selfbiased wide band monolithic low noise amplifier. The circuit is manufactured with a standard P-HEMT process: 0.25µm gate length, via

CHT4690-99F

Abstract: CHT4690 DSCHT46905334
Contextual Info: CHT4690 RoHS COMPLIANT 5-30GHz ATTENUATOR GaAs Monolithic Microwave IC Description The CHT4690 is a variable 5-30GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds.

CHA2066

Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22
Contextual Info: CHA2066 RoHS COMPLIANT 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via

CHT4690

Abstract: CHT4690-99F 99-F
Contextual Info: CHT4690-99F RoHS COMPLIANT 5-30GHz ATTENUATOR GaAs Monolithic Microwave IC Description The CHT4690 is a variable 5-30GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps

10ghz variable attenuator

Abstract: Fixed Attenuators Surface Mount 30dB AN0017 CHT4690-QAG RO4003 10ghz attenuator
Contextual Info: CHT4690-QAG RoHS COMPLIANT 5-30GHz ATTENUATOR GaAs Monolithic Microwave IC in SMD leadless package Description The CHT4690-QAG is a variable 5-30GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a

Contextual Info: CHA3666-FAA 6-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3666-FAA is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via

Contextual Info: CHA3666 RoHS COMPLIANT 6-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description VD1 VD2 The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via

Contextual Info: CHA1014 RoHS COMPLIANT 7-14GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA1014 is a monolithic two-stage wide band low noise amplifier designed for a wide range of applications. The circuit is manufactured with a standard pHEMT process 0.25µm gate length, via

Contextual Info: CHA2190 RoHS COMPLIANT 20-30GHz Low Noise Amplifier self biased GaAs Monolithic Microwave IC Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via

Contextual Info: CHA2394 RoHS COMPLIANT 36-40GHz Very Low Noise High Gain Amplifier GaAs Monolithic Microwave IC Description Vds Vds The CHA2394 is a three-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.

CHA2194

Contextual Info: CHA2194 36-44GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 38 GHz to 44 GHz point to point and point to multipoints communication . The circuit is manufactured with a standard

variable attenuator at 15GHz with input power 12dBm

Abstract: CHT4690 7135 35v
Contextual Info: CHT4690 RoHS COMPLIANT 5-30GHz ATTENUATOR GaAs Monolithic Microwave IC Description The CHT4690 is a variable 5-30GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC

CHA2194

Abstract: VG-12
Contextual Info: CHA2194 RoHS COMPLIANT 36-44GHz Low Noise Amplifier Self biased GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipoint communication .

CHA8100

Abstract: x-Band High Power Amplifier AN0020 CHA8100-99F 41dBm vcx8 mar105
Contextual Info: CHA8100 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC TI Description Vc TO9 Vc Vctrl Vc TO8 The CHA8100 chip is a monolithic twostage high power amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power

CHT4690-QAG

Abstract: variable attenuator at 15GHz AN0017 RO4003 16L-QFN
Contextual Info: CHT4690-QAG RoHS COMPLIANT 5-30GHz ATTENUATOR GaAs Monolithic Microwave IC in SMD leadless package Description The CHT4690-QAG is a variable 5-30GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a MESFET

4093 bd

Abstract: AN0017 CHA2066-QAG MO-220 PS11 PS12 PS22 RO4003 PCB Rogers RO4003 7649 qfn
Contextual Info: CHA2066-QAG RoHS COMPLIANT 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2066-QAG is a two-stage wide band monolithic low noise amplifier. Typical applications range from telecommunication point to point, point to multi-point, VSAT to

CHA2391

Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22
Contextual Info: CHA2391 RoHS COMPLIANT 36-40GHz Very Low Noise Amplifier GaAs Monolithic Microwave IC Vd Description The CHA2391 is a two-stage wide band monolithic low noise amplifier. 25 50 IN The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via

CHA2395

Contextual Info: CHA2395 RoHS COMPLIANT 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2395 is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.