CHA2069 Search Results
CHA2069 Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| CHA2069 | United Monolithic Semiconductors | 18-31GHz Low Noise Amplifier | Original | 168.19KB | 8 | ||
| CHA2069-99F/00 | United Monolithic Semiconductors | 18-31 GHz low noise amplifier | Original | 168.19KB | 8 | ||
| CHA2069-QDG | United Monolithic Semiconductors | 18-30GHz Low Noise Amplifier | Original | 445.26KB | 18 | ||
| CHA2069RAF | United Monolithic Semiconductors | 18-31GHz Low Noise Amplifier | Original | 174.02KB | 7 | ||
| CHA2069RAF/24 | United Monolithic Semiconductors | 18-31GHz Low Noise Amplifier | Original | 174.01KB | 7 |
CHA2069 Price and Stock
Others CHA2069A99F00 |
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CHA2069A99F00 | 442 |
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Monolithic Power Systems CHA2069-99F/00INSTOCK |
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CHA2069 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
AN0010
Abstract: AN0017 CHA2069-QDG MO-220 RO4003 ro4003 rogers microstrip
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cha2069-qdg18-30ghz20dbmdscha2069qdg6332+5 | |
A2069
Abstract: AN0017 CHA2069-QDG MO-220
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cha2069-qdg18-30ghza206920dbm+3 | |
CHA2069-99F/00
Abstract: CHA2069
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cha206918-31ghz20dbmdscha20679273+2 | |
CHA2069Contextual Info: CHA2069 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges |
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cha206918-31ghz20dbmdscha20699273+1 | |
microwave IC
Abstract: CHA2069RAF
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cha2069raf18-31ghzdscha2069113818-may-01-+2 | |
CHA2069RAF
Abstract: AN0005 CHA2069 microwave IC
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cha2069raf18-31ghz20ultdscha2069raf1257+4 | |
CHA2069-99F/00
Abstract: CHA2069
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cha206918-31ghz20dbmdscha20679273+2 | |
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Contextual Info: CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via |
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cha206918-31ghz20dbmdscha20679273+1 | |
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Contextual Info: CHA2069-FAA 16-32GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA2069-FAA is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via |
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cha2069-faa16-32ghzv/55maa2069+1 | |
AN0005
Abstract: CHA2069RAF RO4003 SMD 6 PIN IC 1s
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cha2069raf18-31ghz26ghzdscha2069raf2169+4 | |
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Contextual Info: CHA2069-QDG RoHS COMPLIANT 18-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2069-QDG is a three-stage self-biased wide band monolithic low noise amplifier. Typical applications range from telecommunication point to point, point to multipoint, VSAT to ISM and military markets. |
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cha2069-qdg18-30ghza2069yyww11+1 | |
CHA2066-99SContextual Info: UMS UNIQUE SPACE SOLUTION A complete selection of catalogue Class S products For many years, UMS has served the needs of the international space community by offering an extensive selection of space evaluated processes: • Low Noise PHEMT PH25, PH15 • Power MESFET (HP07) |
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pph25xpph15hb20shb20p+7 | |
PPH25XContextual Info: Contents Products . 3 Foundry open processes. 12 GaN current packaging solutions and demo boards. 14 |
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pph25x |