DB-3 GALAXY Search Results
DB-3 GALAXY Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
c1124Contextual Info: DOUBLE-BALANCED microwave MIXER SURFACE MOUNT MODEL: SGS-5-17 3 - 19 GHz WIDE BANDWIDTH - galaxy series FEATURES: ► Multi-Octave Bandwidth ► Schottky Diode Mixers ► Low Conversion Loss ► SYNSTRIP Multi-Layer Technology ► Patented REL-PRO Technology |
Original |
SGS-5-17 -10dBm 30MHz 14dBm 17dBm 19dBm c1124 | |
|
Contextual Info: DOUBLE-BALANCED microwave MIXER SURFACE MOUNT MODEL: SGS-5-10 3 - 19 GHz WIDE BANDWIDTH - Galaxy series FEATURES: ► Multi-Octave Bandwidth ► Schottky Diode Mixers ► Low Conversion Loss ► REL-PRO Patented Technology ► SYNSTRIP® Multi-Layer Technology |
Original |
SGS-5-10 -10dBm, 30MHz, 10dBm 13dBm | |
RF Microwave schottky Diode mixerContextual Info: - PROPRIETARY INFORMATION - DOUBLE-BALANCED MICROWAVE MIXER SURFACE MOUNT MODEL: SGS-5-13 WIDE BANDWIDTH - GALAXY SERIES FEATURES: ► Multi-Octave Bandwidth ► Schottky Diode Mixers ► Low Conversion Loss ► RoHS Compliant ► SYNSTRIP Multi-Layer Technology |
Original |
SGS-5-13 -10dBm 30MHz 10dBm 13dBm 16dBm 10dBm RF Microwave schottky Diode mixer | |
|
Contextual Info: DOUBLE-BALANCED microwave MIXER SURFACE MOUNT MODEL: SGS-5-17 3 - 19 GHz WIDE BANDWIDTH - galaxy series FEATURES: ► Multi-Octave Bandwidth ► Schottky Diode Mixers ► Low Conversion Loss ► REL-PRO Patented Technology ► SYNSTRIP® Multi-Layer Technology |
Original |
SGS-5-17 -10dBm 30MHz 14dBm 17dBm 19dBm | |
|
Contextual Info: DOUBLE-BALANCED microwave MIXER SURFACE MOUNT MODEL: SGS-5-10 3 - 19 GHz WIDE BANDWIDTH - Galaxy series FEATURES: ► Multi-Octave Bandwidth ► Schottky Diode Mixers ► Low Conversion Loss ► RoHS Compliant ► SYNSTRIP Multi-Layer Technology RF=-10dBm, IF=30MHz, IF=LO-RF |
Original |
SGS-5-10 -10dBm, 30MHz, 10dBm 13dBm | |
100MHZ
Abstract: SGS-5-13
|
Original |
SGS-5-13 -10dBm 30MHz 10dBm 13dBm 16dBm 100MHZ SGS-5-13 | |
RF Microwave schottky Diode mixer
Abstract: synergy series package Synergy Microwave mixer 100MHZ SGS-5-10 1260-0 microwave mixer diode Microwave schottky Diode mixer
|
Original |
SGS-5-10 -10dBm, 30MHz, 10dBm 13dBm RF Microwave schottky Diode mixer synergy series package Synergy Microwave mixer 100MHZ SGS-5-10 1260-0 microwave mixer diode Microwave schottky Diode mixer | |
RF Microwave schottky Diode mixer
Abstract: 100MHZ SGS-5-17 rf207
|
Original |
SGS-5-17 -10dBm 30MHz 14dBm RF Microwave schottky Diode mixer 100MHZ SGS-5-17 rf207 | |
|
Contextual Info: DOUBLE-BALANCED microwave MIXER SURFACE MOUNT MODEL: SGS-5-13 WIDE BANDWIDTH - galaxy series FEATURES: ► Multi-Octave Bandwidth ► Schottky Diode Mixers ► Low Conversion Loss ► REL-PRO Patented Technology ► SYNSTRIP® Multi-Layer Technology 3 - 19 GHz |
Original |
SGS-5-13 -10dBm 30MHz 10dBm 13dBm 16dBm 10dBm | |
|
Contextual Info: - PROPRIETARY INFORMATION - DOUBLE-BALANCED MICROWAVE MIXER SURFACE MOUNT MODEL: SGS-5-10 3 - 19 GHz WIDE BANDWIDTH - GALAXY SERIES FEATURES: ► Multi-Octave Bandwidth ► Schottky Diode Mixers ► Low Conversion Loss ► RoHS Compliant ► SYNSTRIP Multi-Layer Technology |
Original |
SGS-5-10 -10dBm, 30MHz, 10dBm 13dBm | |
|
Contextual Info: - PROPRIETARY INFORMATION - DOUBLE-BALANCED MIXER SURFACE MOUNT MODEL: SGM-2-13 WIDE BANDWIDTH - GALAXY SERIES LO Frequency > RF Frequency IF=50 MHz, RF=-10 dBm 10 9 8 Conversion Loss (dB) FEATURES: ► High Reliability ► Low Construction Cost ► Small Size, Surface Mount |
Original |
SGM-2-13 | |
DB207S
Abstract: PER 203S 201S 202S 203S 204S DB201S DB207 DB 207S 206s
|
Original |
DB201S DB207S MIL-STD-202 20URRENT, 300uS DB207S PER 203S 201S 202S 203S 204S DB207 DB 207S 206s | |
|
Contextual Info: BL GALAXY ELECTRICAL DB201S - DB207S VOLTAGE RANGE: 50 - 1000 V CURRENT: 2.0 A SILICON BRIDGE RECTIFIERS FEATURES DB - S Rating to 1000V PRV .310 7.90 .290(7.40) Surge overload rating to 30 Amperes peak .255(6.5) .245(6.2) Ideal for printed circuit board |
Original |
DB201S DB207S MIL-STD-202 205RWARD 300uS | |
SGM-2-13
Abstract: rf2520 SGM SERIES
|
Original |
SGM-2-13 SGM-2-13 rf2520 SGM SERIES | |
|
|
|||
|
Contextual Info: BL GALAXY ELECTRICAL DB151S - - - DB157S VOLTAGE RANGE: 50 - 1000 V CURRENT: 1.5 A SILICON BRIDGE RECTIFIERS FEATURES DB-S Rating to 1000V PRV .310 7.90 .290(7.40) Surge overload rating to 30 Amperes peak .255(6.5) .245(6.2) Glass passivated chip junctions |
Original |
DB151S DB157S MIL-STD-202 | |
153sContextual Info: BL GALAXY ELECTRICAL DB151S - DB157S VOLTAGE RANGE: 50 - 1000 V CURRENT: 1.5 A SILICON BRIDGE RECTIFIERS FEATURES DB-S Rating to 1000V PRV .310 7.90 .290(7.40) Surge overload rating to 30 Amperes peak .255(6.5) .245(6.2) Ideal for printed circuit board |
Original |
DB151S DB157S MIL-STD-202 153s | |
151S
Abstract: DB151S DB157S
|
Original |
DB151S DB157S MIL-STD-202 151S DB157S | |
DB101S-DB107S
Abstract: DB105S DB107S 101S 0287002 102S 103S 104S 106S DB101S
|
Original |
DB101S DB107S MIL-STD-202 300uS DB101S-DB107S DB105S DB107S 101S 0287002 102S 103S 104S 106S | |
turbo codes matlab code
Abstract: PHASE SHIFT KEYING dPSK matlab code for turbo product code ANTPC01 encoder verilog coding ADVANCED HARDWARE ARCHITECTURES turbo encoder circuit ANTPC02 galaxy note Turbo Decoder
|
Original |
ANTPC06-1099 ANTPC01) ANTPC01 ANTPC02 AHA4501 ANTPC03 ANTPC04 turbo codes matlab code PHASE SHIFT KEYING dPSK matlab code for turbo product code ANTPC01 encoder verilog coding ADVANCED HARDWARE ARCHITECTURES turbo encoder circuit ANTPC02 galaxy note Turbo Decoder | |
|
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Low noise:NF=1dB Typ. ,10 dB(Max). z Complementary to 2SA1162. z High voltage and high current. z High hFE linearity. 2SC2712 Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications. |
Original |
2SC2712 2SA1162. OT-23 BL/SSSTC021 | |
sot-23 Marking LG
Abstract: 2SC2712 SOT 23 LY LY SOT23 transistor marking LG MARKING Lg SOT23 2SA1162 marking LG sot-23 marking LY sot-23 transistor marking code lg
|
Original |
2SC2712 2SA1162. OT-23 BL/SSSTC021 sot-23 Marking LG 2SC2712 SOT 23 LY LY SOT23 transistor marking LG MARKING Lg SOT23 2SA1162 marking LG sot-23 marking LY sot-23 transistor marking code lg | |
MMDT3946
Abstract: PNP 3906 SOT23 sot363 mmdt3946
|
Original |
MMDT3946 3904-Type 3906-Type OT-363 OT-23 BL/SSSTE004 MMDT3946 PNP 3906 SOT23 sot363 mmdt3946 | |
transistor code R24
Abstract: R24 marking code transistor SOT R23 Transistor R25 r25 transistor transistor R24 r23 transistor SOT R25 2SC3356W R24 transistor
|
Original |
2SC3356W OT-323 R23/R24/R25 200taxial BL/SSSTF001 transistor code R24 R24 marking code transistor SOT R23 Transistor R25 r25 transistor transistor R24 r23 transistor SOT R25 2SC3356W R24 transistor | |
marking r25 NPN
Abstract: NPN R25 transistor code R24 R24 marking code transistor SOT R23 npn marking r25 Transistor R25 R24 marking SOT R25 2SC4226W
|
Original |
2SC4226W 150mW) OT-323 r23/r24/r25 BL/SSSTF042 marking r25 NPN NPN R25 transistor code R24 R24 marking code transistor SOT R23 npn marking r25 Transistor R25 R24 marking SOT R25 2SC4226W | |