DATASHEET OF IC 733 Search Results

transistor sta 733

Abstract: IRF 730 TRANSISTOR IRF 318 J CL66 irf 80 n Ultrasonic power generator schematic irf transistors IRF730FI 730 mos IRF732
Contextual Info: 30E D m 7 ^ 2 3 7 OD2T7*iS a_• | / T 7 S GS-THOM SO N IRF 730/FI-731/FI 4 T /W[ « [ I » ! « ! _ IRF 732/FI-733/FI 1 6 S-THOMSON TYPE V DSS IRF730 IRF730FI IRF731 IRF731FI IRF732 IRF732FI IRF733 IRF733FI 400 V 400 V 350 V 350 V 400 V 400 V 350 V

RH80536

Abstract: RJ80536 910GM Micro-FCPGA
Contextual Info: R Mobile Intel Celeron® Processor 0.18µ in Micro-FCBGA and Micro-FCPGA Packages at 933 MHz, 866 MHz, 800A MHz, and 733 MHz Datasheet October 2001 Order Number: 298514-001 ® ® Mobile Intel Celeron Processor (0.18µ) in Micro-FCBGA and Micro-FCPGA Packages

C945K

Abstract: c550b C548B TO-92 227 1020 C2785 bc 9013 MPS6521 pn3565 cs9015 C559B
Contextual Info: NPN Low Level Amplifiers Device No. [Mark] K S C 900 Case Style I CBO IC V CE VCB h FE & @ Min Max mA (V) (nA) @ (V) Max V CE(SAT) (V) Max & V BE(SAT) V BE(ON) * IC @ (mA) IC C ob (pF) (V) (I = ) Min Max B 10 Max I (MHz) @ C Min (mA) NF (dB) Max Test Cond.

ATMEL 744

Abstract: 1502d 7815 regulator ic 7815 pin out diagram atmel ata6870 REGULATOR IC 7814 voltage REGULATOR IC 7814 ADC 7815
Contextual Info: Atmel ATA6870 Li-Ion, NiMH Battery Measuring, Charge Balancing and Power-supply Circuit DATASHEET Features ● 12-bit battery-cell voltage measurement ● Simultaneous battery cells measurement in parallel ● Cell temperature measurement ● Charge Balancing Capability

7812 12V voltage regulator low input

Abstract: MOSI REGULATOR IC 7814 CS*FUSE ATA6870 956d ATA6870N transistor 1502D ADC 7815
Contextual Info: Atmel ATA6870N Li-Ion, NiMH Battery Measuring, Charge Balancing and Power-supply Circuit DATASHEET Features ● 12-bit battery-cell voltage measurement ● Simultaneous battery cells measurement in parallel ● Cell temperature measurement ● Charge Balancing Capability

TFD120

Abstract: TFD-120 TFD200 850g powerline npn darlington 40A
Contextual Info: DTD/TFD120/200 DTD/TFD120/200 Superswitch Powerline NPN Darlington Transistor Replaces November 1999 version, DS5265-2.0 DS5265-3.0 September 2000 APPLICATIONS • High frequency inverters ■ Power supplies ■ Aircraft power supplies ■ Motor controls KEY PARAMETERS

Contextual Info: 1234356 Enhanced SoloLIN Transceiver 789ABC8D6 1 Compatible to LIN Physical Layer Specification Rev.1.3 and 2.0 1 Compatible to ISO9141 functions 1 Operating voltage VS = 7 to 18 V 1 Very low standby current consumption of 6.5µA in sleep mode 1 Remote wake up via bus traffic

TRANSISTOR SMD MARKING CODE DK

Abstract: 301 marking code PNP transistor TRANSISTOR SMD CODE PACKAGE SOT23 501 smd transistor marking DK smd TRANSISTOR code marking pb sot23 transistor marking 44 sot23 339 marking code SMD transistor DK smd code sot23 TRANSISTOR SMD CODE 339 TRANSISTOR SMD MARKING CODE SP
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA143ZT PNP resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 12 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA143ZT

DIM400PBM17-A000

Contextual Info: DIM400PBM17-A000 DIM400PBM17-A000 IGBT Bi-Directional Switch Module Preliminary Information DS5524-1.2 March 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

DIM200PKM33-A000

Contextual Info: DIM200PKM33-A000 DIM200PKM33-A000 IGBT Chopper Module Preliminary Information DS5598-1.1 April 2003 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS

DIM200PLM33-A000

Contextual Info: DIM200PLM33-A000 DIM200PLM33-A000 IGBT Chopper Module Preliminary Information Replaces issue April 2003, version DS5597-1.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

DS51764

Abstract: AN4502 DS5176-4 AN4503 AN4505 GP1600FSS18
Contextual Info: GP1600FSS18 GP1600FSS18 Single Switch IGBT Module Replaces January 2000 version, DS5136-3.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1600A Per Module DS5176-4.2 January 2001 KEY PARAMETERS

GP500LSS06S

Contextual Info: GP500LSS06S GP500LSS06S Single Switch IGBT Module Replaces October 2001 version, DS4324-6.0 FEATURES DS4324-7.0 April 2002 KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE sat * (typ) ■ Low Forward Voltage Drop (max) 700A Isolated Base IC25

AN4502

Abstract: AN4503 AN4505 AN4506 AN4507 GP401DDM18 K1p TRANSISTOR
Contextual Info: GP401DDM18 GP401DDM18 Hi-Reliability Dual Switch Low VCE SAT IGBT Module Advance Information DS5397-1.2 January 2001 FEATURES • Low VCE(SAT) ■ 400A Per Switch ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

Contextual Info: DIM400LSS17-A000 DIM400LSS17-A000 Single Switch IGBT Module Preliminary Information DS5497-1.1 October 2001 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Base KEY PARAMETERS VCES typ VCE(sat) (max) IC (max)

DIM200PHM33-F000

Abstract: ge traction motor DS5606-1
Contextual Info: DIM200PHM33-F000 DIM200PHM33-F000 Half Bridge IGBT Module Preliminary Information DS5606-1.2 June 2003 FEATURES • Soft Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability APPLICATIONS

GP801DDS18

Abstract: AN4502 AN4503 AN4505 DS235-3
Contextual Info: GP801DDS18 GP801DDS18 Dual Switch Low VCE SAT IGBT Module Replaces January 2000 version, DS235-3.0 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 800A Per Arm APPLICATIONS

723 ic internal diagram

Abstract: AN4502 AN4503 AN4505 GP800DDS18
Contextual Info: GP800DDS18 GP800DDS18 Dual Switch IGBT Module Replaces October 2000 version, DS5165-4.2 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Arm

LM 13500

Abstract: DIM2400ESM12-A000
Contextual Info: DIM2400ESM12-A000 DIM2400ESM12-A000 Single Switch IGBT Module Preliminary Information DS5529-1.3 May 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

DIM2400ESM17-A000

Abstract: DIM2400ESM17 LM 949 DS544
Contextual Info: DIM2400ESM17-A000 DIM2400ESM17-A000 Single Switch IGBT Module Replaces May 2001, version 5447-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5447-3.0 March 2002

GP350MHB06S

Contextual Info: GP350MHB06S GP350MHB06S Half Bridge IGBT Module Replaces April 2002 version, DS4923-6.0 FEATURES DS4923-6.1 july 2002 KEY PARAMETERS • n - Channel VCES 600V ■ High Switching Speed VCE sat * (typ) 2.0V ■ Low Forward Voltage Drop (max) 500A Isolated Base

GP250MHB06S

Contextual Info: GP250MHB06S GP250MHB06S Half Bridge IGBT Module Replaces October 2001 version, DS4325 -6.0 FEATURES DS4325-7.0 April 2002 KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE sat * (typ) ■ Low Forward Voltage Drop (max) 350A Isolated Base IC25

GP500LSS06S

Contextual Info: GP500LSS06S GP500LSS06S Single Switch IGBT Module Replaces April 2002 version, DS4324-7.0 FEATURES DS4324-7.1 July 2002 KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE sat * (typ) ■ Low Forward Voltage Drop (max) 700A Isolated Base IC25

K1P T5

Abstract: 3 phase PWM inverter
Contextual Info: DIM25HHT12-B000 DIM25HHT12-B000 Trench Gate IGBT Half Bridge Module Preliminary Information DS5352-2.1 September 2001 FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Trench Gate Enhancement Mode n-Channel Device Non Punch Through Structure High Switching Speed