DATA SHEET TRANSISTOR 2N7002 Search Results

702 TRANSISTOR smd

Abstract: TRANSISTOR SMD MARKING CODE 702 TRANSISTOR SMD MARKING CODE dk 702 TRANSISTOR smd SOT23 TRANSISTOR SMD 702 N 2N7002 PHILIPS MARKING TRANSISTOR SMD 702 G 702 transistor smd code SMD MARKING CODE TRANSISTOR 501 2N7002 SOT23
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET 2N7002 N-channel vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel vertical D-MOS transistor FEATURES 2N7002 QUICK REFERENCE DATA

ld smd transistor

Contextual Info: Philips Semiconductors Data sheet Product specification status 2N7002 N-channel vertical D-MOS transistor date of issue April 1995 FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION

Contextual Info: DATA SHEET 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR CURRENT 115 mAmp FEATURE Unit: inch mm SOT-23 N-channel enhancement mode field effect transistor,de- .007(.20) MIN. VOLTAGE 60 Volts .119(3.00) .110(2.80) .056(1.40) .047(1.20) signed for high speed pulse amplifier and drive applica-

transistor marking s72

Abstract: transistor s72 Marking Code S72 s72 transistor transistor marking code s72 SOT-23 s72 sot 23 Transistor s72 sot23
Contextual Info: DATA SHEET 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR CURRENT 200 mAmp FEATURE Unit: inch mm SOT-23 N-channel enhancement mode field effect transistor,de- .007(.20) MIN. VOLTAGE 60 Volts .119(3.00) .110(2.80) .056(1.40) .047(1.20) signed for high speed pulse amplifier and drive applica-

2N7002KA

Contextual Info: 2N7002KA N-channel TrenchMOS FET Rev. 03 — 25 February 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level compatible

Contextual Info: 2N7002KA N-channel TrenchMOS FET Rev. 01 — 21 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level compatible

2N7002KA

Contextual Info: 2N7002KA N-channel TrenchMOS FET Rev. 02 — 25 September 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level compatible

2N7002E

Abstract: 2N7002-E3
Contextual Info: 2N7002E N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible

Contextual Info: 2N7002E N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible

03aa03

Abstract: 2N7002-T1 2N7002T
Contextual Info: 2N7002T N-channel TrenchMOS FET Rev. 01 — 17 November 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible

03aa03

Abstract: 2N7002-1 2N70021
Contextual Info: 2N7002 N-channel TrenchMOS FET Rev. 05 — 15 November 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible

2n7002-1

Abstract: 2N7002 PHILIPS PHILIPS 2N7002 MBB076 2N7002* application 2N7002 2N7002-03 HZG336 2n70020 2N70021
Contextual Info: 2N7002 N-channel TrenchMOS FET Rev. 06 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible

2N7002F

Contextual Info: 2N7002F N-channel TrenchMOS FET Rev. 02 — 9 May 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible

2N7002F

Abstract: 2N7002F_2
Contextual Info: 2N7002F N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible

2N7002F

Contextual Info: 2N7002F N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible

Contextual Info: 2N7002F N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible

Contextual Info: • Philips Semiconductors N bbSB'iai 0024136 4TT ■ I A P X AUER Data sheet status Product specification P H IL IP S /D IS C R E T E b?E ]> 2N7002 N-channel vertical D-MOS transistor date of issue April 1991 FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL,

smd transistor TO4

Abstract: SMD Transistor 7e SMD SOT23 7E to4 smd smd to4 transistor DI 763 2N7002 phi ic87 2N7002 UBB073
Contextual Info: • Philips Semiconductors Product specification date of issue April 1991 FEATUR ES • QDsmaa htt « apx N AUER PHILIPS/DISCRETE Data sheet status bbSB'm fc.7E D 2N7002 N-channei vertical D-MOS transistor QUICK R E F E R E N C E DATA Direct interface to C -M O S , TTL,

2N7002BK

Abstract: 771-2N7002BK215 trench relay
Contextual Info: 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

smd code marking WV

Abstract: nxp p mosfet 2N7002P
Contextual Info: 2N7002P 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

Contextual Info: 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

2N7002BK

Abstract: smd code marking WV
Contextual Info: 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

03aa03

Abstract: 2N7002 SOT23 data sheet transistor 2n7002 philips 2n7002 2n7002 philips equivalent of 2N7002 2n7002-1 "Field Effect Transistor" 2N7002 equivalent 2N7002* application
Contextual Info: 2N7002 N-channel TrenchMOS FET Rev. 04 — 26 April 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology. 1.2 Features • Logic level threshold compatible

1.4944

Abstract: 2N7002E
Contextual Info: 2N7002E N-channel TrenchMOS FET Rev. 02 — 26 April 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology. 1.2 Features • Logic level threshold compatible