DAR TRANSISTOR Search Results

ic 7490

Abstract: 2N60 transistor Ic 7490 circuit 2N6034 PNP 2N60 2N60 2N6037 2N6039 7490 ic 2N6035
Contextual Info: # NPN PNP 2N60342N6037 2N60352N6038 2N60362N6039 @ PLASTIC DAR LINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed forgeneral-purpose amplifier and low-speed switching applications. o High DC Current hFE = 2000 o Gain– Typ Collector-Emitter

TRANSISTOR c 5578 B

Abstract: 2N6427 2N6426 AN-41 AN-569 IC 2030 TRANSISTOR 5578 2902 transistor
Contextual Info: 2N6426 2N6427 NPN SILICON ANNULAR+ DAR LINGTON TRANSISTORS . . . designed for use as high-gain amplifiers control . circuits; drivers Collector-Emitter BVCEO for displays, Breakdown = 40 Vdc Min ● DC Current ● Low Noise Figure — Gain specified ●

bu806 equivalent

Abstract: BU806FI EQUIVALENT BU806 TDA1180 eht transformer using of damper in Horizontal Output Transistor CW-70 horizontal deflection tda1180 crt flyback transformer tv u806
Contextual Info: rrz SGS-THOMSON BU806/FI BU807/FI FAST SWITCHING DARLINGTON TRANSISTORS DESCRIPTION The BU806/807 and BU806FI/807FI are silicon epitaxial planar NPN power transistors in Dar­ lington configuration with integrated base-emitter speed-up diode, mounted respectively in T0-220

1301P

Abstract: K1206 ldmos
Contextual Info: ERICSSON PTE 10125* 135 Watts, 1.4-1.6 GHz LDMOS Field Effect Transistor Description The 10125 is an internally m atched, comm on source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DAR. Rated output

bu806 equivalent

Abstract: horizontal deflection tda1180 BU806 BU806FI bu807 equivalent
Contextual Info: r z 7 SCS-THOM SON A 7 f G«ra iLiOT i[] es BU806/FI BU807/FI FAST SWITCHING DARLINGTON TRANSISTORS DESCRIPTION The BU806/807 and BU806FI/807FI are silicon epitaxial planar NPN power transistors in Dar­ lington configuration with integrated base-emitter

WL12-2P430

Abstract: WL12-2B560 WT12-2P410 WL12G-P530 sick wt12-2p410 sick sensor WT12-2P430 WT12-2P450 SICK WL12-2P460 WL12-2P730 WL12-2P420
Contextual Info: Baureihe W12-2 ReflexionsLichttaster VGA ReflexionsLichttaster HGA W12-2: Prima Performance Know-how kompakt ReflexionsLichttaster energ. Mehr als einen Fortschritt stellt die für Abfülllinien in der Getränkeindustrie konzipierte "Glas-Lichtschranke" WL12G dar. Dieser intelligente Sensor

Motorola ULN2003A

Abstract: mps 0940 MC1411 MC1412 MC1413 MC1413T MC1416 SN75476 SN75477 SN75478
Contextual Info: MC1411 ULNZOOTA MC1412 {ULNZOOZA MC1413 (ULN2003A MC1413T M~1416 (ULN2004A) . HIGH-VOLTAGE, DAR LINGTON The are seven NPN well suited a variety down to600 Darlington-connected for driving of industrial voltage problems and internal TTL, diode and or CMOS

mk06u

Abstract: dil reedrelais KEMA 03 ATEX 2042U relais bistabil smd M21 RM05-4-BV10500 mk08 OPTOKOPPLER PTB 06 ATEX 2042U smd 1C
Contextual Info: PRODUKTÜBERSICHT Reed Relais • Reed Sensoren · Reed Schalter www.meder.com AUSWAHLHILFE MEDER electronic Auswahlhilfe Im folgenden Abschnitt stellen wir unsere Standard-Reedprodukte und ihre Spezifikationen in Übersichtsform dar. Diese Produkte repräsentieren nur einen kleinen Teil des

meuselwitz

Abstract: Filter Hermsdorf GER-A radio fernsehen elektronik rft elektronik elektra 58 VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN hermsdorf rft spule Leipzig
Contextual Info: SERVICE-MITTEI LUIIG IEN 1 Maüäa|radio televfsion \Auigabe - Seite 196G 1 - 4 Schlüsselliste für Garantiereparaturen - Baualeaente/Bautelle und Hersteller Stand: Januar 1988 Achtung: Bisherig« Ausgaben dar Schlusselliste verlieren hiermit ihr« Gültigkeit I

smt a1 transistor

Abstract: A1234 G200 PTF 10021
Contextual Info: PTF 10021 30 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description The PTF 10021 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. It is

Contextual Info: GOLDMOS PTF 10021 Field Effect Transistor 30 Watts, 1.4–1.6 GHz Description The PTF 10021 is an internally matched, 30–watt GOLDMOS FET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. This device operates at 48% efficiency

smt a1 transistor

Abstract: G200
Contextual Info: GOLDMOS PTF 10021 Field Effect Transistor 30 Watts, 1.4–1.6 GHz Description The PTF 10021 is an internally matched, 30–watt GOLDMOS FET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. This device operates at 48% efficiency

TRANSISTOR 318

Abstract: Transistor BC373 BC373 BC372 BC373 TRANSISTOR bc372 transistor BC3735 BC372-5 T092 bc3725
Contextual Info: BC372 BC373 NPN SILICON HIGH VOLTAGE . . . designed foruserelay DAR LINGTON driver and all inductive load applications. . High Collector-Emitter BVCES Breakdown Voltage 100 V at 100 PA for BC372 -80 V at 100 VA for BC373 ● High Current gain lc- . 100/mAdc,

Contextual Info: Ä 7# SGS-THOMSON & MAGNETIC PICKUP IGNITION CONTROLLER • DIRECT DRIVING OF THE EXTERNAL DAR­ LINGTON ■ OPERATES WITH A WIDE RANGE OF MAG­ NETIC PICKUP TYPES ■ CHARGING ANGLE DWELL CONTROL ■ COIL CURRENT PEAK LIMITATION ■ CONTINUOUS COIL CURRENT PROTECTION

ic cd 6283

Abstract: d 6283 ic cd 6283 ic data base lc CD 6283 cd+6283+ic+wiring+diagram 6283
Contextual Info: • 7 CJ2CI 2 3 7 OQeW S SCS-THOMSON 3 T '5 V 5 \ 2N6282/83/84 2N6285/86/87 S G S - THOMSON 3QE » COMPLEMENTARY POWER DARLINGTONS DESCRIPTIO N The 2N 6282,2N 6283 and 2N6284 and the comple­ mentary PNP types 2N6285, 2N6286, 2N 6287 are epitaxial-base silicon transistors in monolithic Dar­

transistor d 1557

Contextual Info: ERICSSON ^ PTF 10021 30 Watts, 1.4-1.6 GHz LDMOS Field Effect Transistor Description The 10021 is an internally matched common source n-channel enhancement-mode lateral MOSFET intended for linear driver and final applica­ tions in the 1.4 to 1.6 GHz range such as DAB/DAR. it is rated at 30

Contextual Info: TOSHIBA TPS617 TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR T• P■ <MF; f i i■ 7* PHOTO DAR IN G TO N TRANSISTOR FOR PHOTO INTERRUPTER U n i t in m m PHOTOELECTRIC COUNTER POSITION DETECTION A U T O M A T IC CONTROL UNIT • Visible light cut type black package

6 volt pickup ignition

Abstract: 6 VOLT CD IGNITION h8 diode zener pic tachometer circuit
Contextual Info: rZ 7 Ä 7# S G S -T H O M S O N ß MAGNETIC PICKUP IGNITION CONTROLLER . DIRECT DRIVING OF THE EXTERNAL DAR­ LINGTON • OPERATES WITH A WIDE RANGE OF MA­ GNETIC PICKUP TYPES . CHARGING ANGLE DWELL CONTROL ■ COILCURREISTT PEAK LIMITATION ■ CONTINUOUS COIL CURRENT PROTECTION

M54524P

Abstract: transistor bipolar 500ma LF400
Contextual Info: - • MITSUBISHI ELEK -CUNEAR} ÔD r” M IT S U B IS H I B IP O LA R D IG IT A L ICs de| □□□cisbD d | ^ V I S 4 5 ^ 4 P 7 -U N IT 500m A DAR LING TO N T R A N S IS T O R ARRAY W IT H C L A M P DIODE 6249826 MITSUBISHI DESCRIPTION ELEK L INEAR 80CT 09 260

Q0233

Abstract: PHOTO SENSORS BN505 DD505 PD505 IR Emitter 1D
Contextual Info: A C INTERFACE INC 10 EL D | □□S33Ô3 00GÜS0S û | _ _ _ _ _ PD505 Ç f M L E t STANLEY PHOTO DAR LI N GTO NT RAN SI STO R Package Dimensions • FEATURES 1 High p h o to cu rren t (T y p . 3 .5 m A a t Ee = 0.0 1 m W /c m 2 ) (2 ) Best suited fo r p h o to in te rru p te r

4 bis 20 mA stromquelle

Abstract: konstant stromquelle stromwandler AM402 ANALOGE MESSUMFORMER AM462 AM462-1 462 transistor A462
Contextual Info: AM 462 – Spannung/Strom-Wandler-IC für 2-Draht Stromschleifenanwendungen 4…20mA Das analoge Netz mit Stromwerten von 4…20mA stellt nach wie vor die am häufigsten benutzte industrielle Informationsübertragung dar. Der nachfolgenden Artikel behandelt die analoge 2-Draht Stromschnittstelle (Stromschleife) für den Ausgangsstrom von 4.20mA (Einheitswert). Es wird beschrieben, wie sich beispielsweise mit Hilfe des IC vom Typ AM462 (Spannungs-Strom-Wandler-IC) eine industrietaugliche 2-Draht Schnittstellenschaltung für eine SPS realisieren lässt. Es werden die

D67DE5

Abstract: Q6015at
Contextual Info: LO R A S I N D U S T R I E S INC MEE D • 55ÛG44Ô QDG003D 7 « L O R A TRANSISTOR PACKAGE TYPE PART No. DESCRIPTION H fe Pt 25°C Watts iç Amps VEBO Volts VCEO Volts VCBO Volts !ç H fe Amps - 250 250 300 300 5.0 5.0 5.0 5.0 125.00 50.00 S0.00 50.00

Q4015T

Abstract: NP5138 Q6015LT Q4006AT Q4004LT MPS930 44t transistor Q4006LT
Contextual Info: TRANSISTOR PART No TYPE Pt @25°C Watts VCEO Volts VEBO Volts VCBO Volts Hfe |ç a lc Amps Volts Hfe PACKAGE DESCRIPTION T 0 18 T 0 18 T 0 18 T 0 18 SGN SGN SGN SGN 0.20 0.50 0.50 0.50 0.05 0.80 0.80 0.80 15 30 30 40 3.0 5.0 5.0 6.0 30 60 60 75 20 25 50 50

TRANSISTOR 2N4289

Abstract: Q4006at 2N2222A mps quadrac Q5010A NPN transistor 2n2222A Q4010LT 2N39Q3 Q6015A lora
Contextual Info: LO RA S INDUSTRIES INC MEE D • 5500440 OGGDQET G H L O R A TRANSISTOR PART No TYPE PACKAGE T O - 1 8 Package 2N0918 2N2221 :2N2222 2N2222A NPN NPN NPN NPN DESCRIPTION Pt @25°C Watts !<¿ Amps -r - n~? i 1 t-U\ VEBO Volts VCEO Volts VCBO Volts Hfe Hfe \ç