DAN803 Search Results

DAP803

Abstract: DAN803 DA4148 DA4148A DA4148K
Contextual Info: DAN803 / DAP803 / DA4148A/K 200 mW DAN803 / DAP803 / DA4148A/K (200 mW) Small Signal Diode Arrays Diodensätze mit Allzweckdioden Version 2008-06-06 Nominal power dissipation Nenn-Verlustleistung 24±0.2 3.5 Repetitive peak reverse voltage Periodische Spitzensperrspannung

DAN803

Abstract: DAN403 DAP801 DAN401 DAP8 DAP401 DAN801
Contextual Info: $ -f DAN401 /DAN601 /DAN801 /DAN803/DAN403 DAP401 /DAP601 /DAP801 /DAP803 K/'Diodes DAN401 /DAN601 /DAN801 /DAN803/DAN403 DAP401 /DAP601 /DAP801 /DAP803 X hf i l *• > 7 Jls -f \S- i-M v 'J à > ? -f * - K 7 K Epitaxial Planar Silicon Diode Arrays iìiliìlU f

Contextual Info: DAN401 /DAN601 /DAN801 /DAN803/DAN403 DAP401 /DAP601 /DAP801 /DAP803 K /D iod es DAN401 /DAN601 /DAN801 /DAN803/DAN403 DAP401 /DAP601 /DAP801 /DAP803 v V =i > 1 $ 3- V T ; u7 °U - j- M M & JS* < "J 3- > ? 2 '< * - KT7 K Silicon Epitaxial Planar Ultra-High Speed Switching Diode Arrays

DAN801

Abstract: AP401 DAN403 rohm dan403
Contextual Info: DAN401 /DAN601 /DAN801 /DAN803/DAN403 DAP401 /DAP601 /DAP801 /DAP803 $ -4 ^ — K /D io d es DAN401 /DAN601 /DAN801 /DAN803/DAN403 DAP401 /DAP601 /DAP801 /DAP803 t — K 7 K Epitaxial Planar Silicon Diode Arrays ilS ilS jiy x ^ 'i "J •^■>‘^ffl/Ultra-High-Speed Switching

DAN601

Abstract: dap401
Contextual Info: DAN401 DAN403 DAN601 DAN801 DAN803 DAP401 DAP601 DAP801 DAP803 Diode, array, high-speed switching, leaded Dimensions Units : mm In these single chips, there are multiple diodes as shown in the circuit diagrams. All diodes are in multi-pin molded packages.

DAP801

Abstract: DAN401 DAN403 DAN801 DAN803 DAN601 DAP401 DAP601 DAP803
Contextual Info: DAN401 DAN403 DAN601 DAN801 DAN803 DAP401 DAP601 DAP801 DAP803 Diode, array, high-speed switching, leaded Dimensions Units : mm In these single chips, there are multiple diodes as shown in the circuit diagrams. All diodes are in multi-pin molded packages.

Contextual Info: DAN803 / DAP803 / DA4148A/K 200 mW Small Signal Diode Arrays Dioden Sätze mit Allzweckdioden Version 2004-10-01 Nominal power dissipation Nenn-Verlustleistung 3.5 Repetitive peak reverse voltage Periodische Spitzensperrspannung 6.6 24 ±0.2 3.5 Type / Typ

FSA2510

Abstract: FSA2619 FSA2620 tnd903
Contextual Info: DIODE ARRAYS PACKAGES AND CIRCUITS 14 6 1 7 D IP1-7 D IP 1-8 1 2 3 1 2 DAN215 4 - 8 700 - ^ < 4— 0.400 — ^ 0.400 — ^ A A ♦ 0.295 m ax A A 0.295 DAN401 YYYm t' 0055 _14 Places N ote 1 T T _ o 100 0.020 Dia n 0.300 Typ ' Note 1: DIP sockets have 0.020” diameter solder tail. Brass

1SS309

Abstract: DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
Contextual Info: - 1 74 nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)

1SS309

Abstract: DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401 DA6PC
Contextual Info: 17 4 - - nï m it « s fe aï V r rm Vr V (V) (fliA) 80 80 300 300 Io ,If* I fm <°C) (nA) I fsm cc> (A) 1SS308 1SS309 DA-3N DA-3P DA-4N * ') *s y * y -y y 85 85 35 35 35 DA-4P DA-6NC DA-6PC DA-8N DA-8P * * * * * y y y •) ') V y y * y î? y & y 35 35 35

628B

Abstract: 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
Contextual Info: - 1 74 - nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)

DIODE da218s

Abstract: DA218S DA218 DA210S DA216 DA203 da210 DAN213 DAN801 da203 b
Contextual Info: RDNfn Diode Arrays Application Part No. High-speed Switching 2 Vps connected in series Rectifying Vr V trr Max. (ns) lo CmA) V rm (V) Isurge 60Hz 1°= (A) Ct Max. (pF) Package Circuits Fig.1 DAN201 80 80 100 4 3.5 - FTR DAN209 80 80 100 4 3.5 - TO-92 Fig.1

DAN801

Abstract: kyz35a4 KYW25A05 DAN803 DAN208 DAN401 DA814K kyz35K4 1N4003 BA157* diode
Contextual Info: 13 x 3.5 x 6.6 ±0.2 3.5 13±0.2 Ø 0.8 Type Typ 6.6±0.2 Type Typ Type / Typ Ø 0.5 3.5 Ø 0.5 3.5 ±0.2 3.5±0.2 Ø 0.5 Type / Typ 0.25 5 3.5 3.5 18±0.2 6.6±0.2 ±0.2 6.6 6.6±0.2 Type Typ ±0.2 2.6 3.5 24±0.2 ±0.2 13±0.2 Type Typ 23 x 2.6 x 4.5 4.5

A116 diode

Abstract: DIODE A116 as 15-f DIODE A118 AP-222 diode smd6 44
Contextual Info: Introduction Diode array summary see page 227 Part number DC reverse voltage V r (V) Mean rectifying current l0 (mA) Reverse Terminal recovery time capacitance (max) trr (ns) CT (PF) Package type Circuit diagram High speed switching diode arrays FMN1 80

DAN202KVA

Abstract: DAP202KVA
Contextual Info: "Ôï DE I T ñ H & ' m DDQ11Û0 1 T - 2 , 3 'O S ” lumm Diodes Low-Voltage Regulators LED Glass Sealed Package Type Absoluto Maximum Ratrngs(Ta=25"C) • '(m W ). -|F Vn - (m A ) r-.- .(V )- g fi; In '• - V ’ fi: ' (/<A) ' :Vr : Max. (V). • Max.

1SS309

Abstract: DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401 m5x0.8
Contextual Info: - 1 74 - nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)

PC802

Abstract: DAP803 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803
Contextual Info: 1 74 - - nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N * * s ' * s y y -y y Vr V) (V) (fliA) 80 80 300 300 85 85 35 35 35 fe aï V r rm Io ,If* I fm <°C) (nA) I fsm cc> (A) Vpmax IR'JWl m * iS Æ ism tÉ (WJAfc I Rmax fk ñ (V) I F <mA) ( ß A) V f (V) <°C)

Contextual Info: TENTATIVE Control IC Product Specifications All Rights Reserved, Copyright Fujitsu Component Limited FCL 2005 TITLE Control IC Product Specifications DRAW. NO. 02 20050824 Yoshifusa Nakajima ② mark is added EDIT DESIG. DATE DESIG. CHECK 20050615K.Yoshifusa

1N4148 SMD LL-34

Abstract: Diode smd 82T SMD 82T LTZ-MR15 SC-40 DO-34 ZENER da226u 1N4606 1N4148 LL-41 1SR35-100
Contextual Info: : t — K /D io d e s T .'f " j f - > • ? '£ '< i [ — K /S w itc h in g Diodes • ¡ S S É /t^ 'i *j 3 - 's * ? $ Part No. Cond. Package Page V r V V f (V) Max. I f (mA) 1SS353 80 1.2 100 USM 34 1SS354 50 1.2 100 USM 34 1SS355 35 1.2 100 USM 34 RLS-71

DAP801

Abstract: DA-6NC DAP803 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802
Contextual Info: - 1 74 nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' * s * y y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)

DA-4P

Abstract: 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
Contextual Info: 174 - - nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N * * s ' * s y y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m * iSÆismtÉ (WJAfc I Rmax fk ñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)

FSA2510

Abstract: FSA2501 fsa2620
Contextual Info: I nternational S em iconductor , I nc . Diode Arrays IS I Part Num ber C k ts Per Pkg D io d e s Per C KL u Max m A V RBH (V o lts ) vF lF Max @ T e s t (m A ) (V) t„ M ax @ T est (m A ) (n S ) VR Max @ T e s t (uA ) (V) O p e ra tin g T em p eratu re

LT 7236

Abstract: 2t212 DAP236K RLS135 dan201 M/LT 7236
Contextual Info: $ < ^ — K /D io d e s M H /T y p e Number List 1N 15529 1 . 1N700 Series. 210 15529 2 . 63

UDZ6.2B

Abstract: 1SS142 RLZ5243B mtz 9.1 j
Contextual Info: Index Index 1SR35-400A 1SR124-400A 1SR139-400 1SR139-600 1SR 153-400 1SR154-400 1SR155-400 1SR156-400 1SR 159-200 1N914 58 1N916 58 1N4004A 133 1N4148 58 1N4150 58 1N4153 58 1N4448 58 1N4531 63 1N4532 63 1N4533 63 1N4534 63 1N4536 63 1N4606 58 4 1N5000B 1N5230B