D64E Search Results

GaN 20A

Contextual Info: D64DV5,6,7 D64EV5,6,7 File Number 2361 50-Ampere N-P-N Darlington Power T ransistors TERMINAL DESIGNATIONS c FLANGE Features: • High speed t$ < 5.0 /jsec., tr < 3.0 Aisec. ■ High voltage: 400-500 Vq ^q POWER TRANSISTORS ■ High gain: 50 minimum @ 50 amperes, I q

1RF640

Abstract: IRF640 ge d84en2 f640 TRANSISTOR IRF640 T0220A8
Contextual Info: Ê »Ü 3 »[Ï8 § IRF640.641 D64EN2,M2 [F U F 18 AMPERES 200,150 VOLTS R d s O N = 0.18 n FIELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

D64DV5

Abstract: D64EV tf 115 250v 2a xc50
Contextual Info: HIGH SPEED D64DV5L6.7 D64EV56.7 NPN POWER DARLINGTON TRANSISTORS 400-500 VOLTS 50 AMP, 180 WATTS These devices are designed for use in high-speed switching applications, such as off-line switching power supplies, PWM D C & A C motor control, U P S systems, ultrasonic equipm ent

Contextual Info: HARRIS SEMICONÎ SECTOR SbE D • File Number 2361 M3DBB71 DGMGÛH? «HAS D64DV5j6,7 D64EV5,6,7 “ 50-Ampere N-P-N Darlington Power Transistors 3 5 - Z ^ TERMINAL DESIGNATIONS c E FLANGE Features: ■ High speed ts < 5.0 //sec., tr < 3.0 fjsec, ■ High voltage: 400-500 Vq ^ q

D64ES5

Abstract: D64DS5 LB2/3.0ZA D64DS
Contextual Info: HIGH SPEED D64DS5,6,7 D64ES5,6,7 NPN POWER DARLINGTON TRANSISTORS 400-500 V >LTS 20 AMP, 125 WATTS These devices are designed for use in high-speed switching applications, such as off-line switching power supplies PWM DC and AC motor control, UPS, ultrasonic equipment and

sw 2596 pwm

Abstract: D64ES5 TE10A SW 2596 ic D64E
Contextual Info: Power Transistors File Number D64DS5,6,7 D64ES5,6,7 15.34 HARRI S SEMICOND SECTOR 27E D M3 G2 27 1 a 0 2 G3 b l 5 « H A S 20-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS F L A N G E Features: •High spaed ts < 3.0 ßsac., tr < 1 .0 ßsec.

Transistor AC 188

Abstract: ica 700 D64EV D64EV5 D64EV6 D64EV7 LS 7541 transistor 600 volts 60 amperes
Contextual Info: 7294621 m N POWEREX B & INC . Tfl De | 7 E T 4 t i 5 1 OöOSlt.7 X 1 “7 ""* 3 3 '"'5 5 " D64EV Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Fast Switching Single Darlington Transistor Module 50 Amperes 500-600-700 Volts Description

1b50a

Abstract: diode T35 DI 380 Transistor T35 diode D64EV6 Transistor AC 188 mrc 100a
Contextual Info: 7294621 POWEREX INC 1 ^ 1 7 2 ^ 4 ^ .5 1 m / w w O O O S lt.7 1 "7 ~ ~ 3 3 ~ 3 S " D64EV x Powerex, Inc., Hillis Street, Ybungwood, Pennsylvania 15697 412 925-7272 Fast Switching Single Darlington Transistor Module 50 Amperes 500-600-700 Volts Description

b929

Abstract: DCD-725 d6849 A277D ad9a E7834
Contextual Info: 1234546789A BCDE4F6CA1ADA 2AAA8 A!"#A$%CA"&A A A 12324567829A4BCDBE37 F25D4297 "04A B4'%5A !FD7A 467E4.76A D.A 2A 52.9A 7A E7.9A .D682A 767E4.76A 779DCD84FA 576A .D682A 5D946D86A 492D829D78A 28FA F:82CDE.A

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CD64KS, D64ES 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-4516CD64KS, D64ES is a 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128 M SDRAM: ,uPD45128163 are assembled.

R5F35L3EKFF

Abstract: R5F35626
Contextual Info: M16C/5L Group, M16C/56 Group RENESAS MCU 1. REJ03B0221-0100 Rev.1.00 Feb 08, 2010 Overview 1.1 Features The M16C/5L Group, M16C/56 Group’s MCU is a single-chip control unit that utilizes high-performance silicon gate CMOS technology with the M16C/60 Series CPU core. The M16C/5L Group, M16C/56 Group

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Contextual Info: DS64EV100 www.ti.com SNLS232E – OCTOBER 2006 – REVISED FEBRUARY 2013 DS64EV100 Programmable Single Equalizer Check for Samples: DS64EV100 FEATURES DESCRIPTION • • • • • • The DS64EV100 programmable equalizer provides compensation for transmission medium losses and

d69ah

Abstract: d718* transistor D56Eh R5F35626 d74c D554 D79f D54Ah d686 D734
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

r5F35

Abstract: D72C R5F35626 d718* transistor D56Eh D626 D62AH d717* transistor R5F35633 D735
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

R5F35MCEJFF

Abstract: dvr rxd4 D35Ah d26bh R5F35M2E D34Ah d717* transistor D425 555 timer 20 khz square wave generator d688
Contextual Info: Datasheet M16C/5M Group, M16C/57 Group RENESAS MCU 1. REJ03B0267-0101 Rev.1.01 Jul 23, 2010 Overview 1.1 Features The M16C/5M and M16C/57 Group’s microcomputers MCUs are single-chip control units that utilize high-performance silicon gate CMOS technology with the M16C/60 Series CPU core. The M16C/5M

Contextual Info: DS64EV100 www.ti.com SNLS232E – OCTOBER 2006 – REVISED FEBRUARY 2013 DS64EV100 Programmable Single Equalizer Check for Samples: DS64EV100 FEATURES DESCRIPTION • • • • • • The DS64EV100 programmable equalizer provides compensation for transmission medium losses and

E99A

Abstract: D79f ED89 E17A ST E954 d697 marking d1f3 111rr011 EE5555 D685 97
Contextual Info: Reference Manual A G R E E M E N T CPU12 N O N - D I S C L O S U R E HC12 R E Q U I R E D Order this document by CPU12RM/AD Rev. 1.0 R E Q U I R E D A G R E E M E N T N O N - D I S C L O S U R E Motorola reserves the right to make changes without further notice to

R5F35L2EDFE

Contextual Info: Datasheet M16C/5LD Group, M16C/56D Group RENESAS MCU 1. R01DS0132EJ0120 Rev.1.20 Nov 25, 2011 Overview 1.1 Features The M16C/5LD and M16C/56D Group’s microcomputers MCUs are single-chip control units that utilize high-performance silicon gate CMOS technology with the M16C/60 Series CPU core. The M16C/5LD and

Contextual Info: DS64EV100 www.ti.com SNLS232E – OCTOBER 2006 – REVISED FEBRUARY 2013 DS64EV100 Programmable Single Equalizer Check for Samples: DS64EV100 FEATURES DESCRIPTION • • • • • • The DS64EV100 programmable equalizer provides compensation for transmission medium losses and

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

R5F35L26DFE

Contextual Info: Datasheet M16C/5LD Group, M16C/56D Group RENESAS MCU 1. R01DS0132EJ0120 Rev.1.20 Nov 25, 2011 Overview 1.1 Features The M16C/5LD and M16C/56D Group’s microcomputers MCUs are single-chip control units that utilize high-performance silicon gate CMOS technology with the M16C/60 Series CPU core. The M16C/5LD and

R01DS0019EJ0110

Abstract: R5F35MCEJFF D40Bh flash memory circuit D384 d407
Contextual Info: Datasheet M16C/5M Group, M16C/57 Group RENESAS MCU 1. R01DS0019EJ0110 Rev.1.10 Sep 01, 2011 Overview 1.1 Features The M16C/5M and M16C/57 Group’s microcomputers MCUs are single-chip control units that utilize high-performance silicon gate CMOS technology with the M16C/60 Series CPU core. The M16C/5M

d64dv

Abstract: D64EV6
Contextual Info: _ TH OM SON / D I S T R I B UT OR SflE D Bipolar Power Transistors Darlington Power Transistors • ^05^073 0005735 0T3 TCSK Continued hFE IH o> > TO-220AB -10 -10 -10 -40 -60 -80 1000 min. 1000 min. 1000 min. -5 -5 -5 -5 -5 -5 50 50 50 50 50 50 400